Preliminary Technical Data
FEATURES
Technology: high performance SiGe
Bandwidth: 3.2 GHz minimum
Input noise current density: 10 pA√Hz
Optical sensitivity: −22 dBm
Differential transimpedance: 4000 V/A
Power dissipation: 75 mW
Differential output swing: 250 mV p-p
Input current overload: +3.25 dBm
Output resistance: 50 Ω side
RSSI voltage and current ratio: 0.8V/mA
Low-freq cutoff: 15 kHz
On-chip PD filter: R
F
= 200 Ω C
F
= 20 pF
Die size: 0.7 mm × 1.2 mm
4.25 Gbps 3.3V Low Noise
Transimpedance Amplifier
ADN2882
PRODUCT DESCRIPTION
The ADN2882 is a compact, high performance 3.3 V power
supply SiGe transimpedance amplifier (TIA) optimized for
small form factor 4.25 Gbps metro-access, Ethernet PIN/APD-
TIA modules and 1×/2×/4× Fibre channel receiver applications
and meets OC48 SR/IR sensitivity requirements. The ADN2882
is a single-chip solution for detecting photodiode current with a
differential output voltage. The ADN2882 features low input
referred noise current of 600 nA enabling −22 dBm sensitivity;
3.2 GHz minimum bandwidth enables up to 4.25 Gbps
operation; +3.25 dBm nominal operation at 10dB extinction
ratio. RSSI output signal proportional to average input current
is available for monitoring and alarm generation. To facilitate
assembly in small form factor packages such as a TO-46 or TO-
56 header, the ADN2882 integrates the photodiode filter
network on chip and features 15 kHz low frequency cutoff
without any external components. The ADN2882 chip area is
less than 1 mm
2
, operates with a 3.3 V power supply and is
available in die form.
APPLICATIONS
4.25 Gbps optical modules
SFF-8472 compliant receivers
PIN/APD-TIA receive optical subassembly
SONET/GbE/FC optical receivers, transceivers, transponders
FUNCTIONAL BLOCK DIAGRAM
3.3V
VCC_FI LT ER
200Ω
FI LT ER
IN
VCC
50Ω
50Ω
OU T
OU T B
1100Ω
20pF
0.85V
5mA
RSSI
GN D
GN D
CAP
Figure 1. ADN2882 Block Diagram
Rev.
PrD
November
04
2004
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.326.8703
© 2004 Analog Devices, Inc. All rights reserved.
ADN2882
TABLE OF CONTENTS
Electrical Specifications ................................................................... 3
Absolute Maximum Ratings............................................................ 4
ESD Caution.................................................................................. 4
Pad Description ................................................................................ 5
Preliminary Technical Data
Pad Layout ..........................................................................................6
Pad Coordinates ............................................................................6
Die Information.............................................................................6
Assembly Recommendations...........................................................7
REVISION HISTORY
07/04—Revision PrB July 27 2004
09/04 - Revision PrC Sept 30 2004: spec changes
11/04 – Revision PrD: RSSI added in
Rev. PrD Nov. 04 2004 | Page 2 of 10
Preliminary Technical Data
ELECTRICAL SPECIFICATIONS
Table 1.
Parameter
DYNAMIC PERFORMANCE
Bandwidth (BW)
2
Total Input RMS Noise (I
RMS
)
2
Small Signal Transimpedance (Z
T
)
Low Frequency Cutoff
Output Return Loss
Input Overload Current
3
Maximum Output Swing
Output Data Transition Time
PSRR
Group Delay Variation
Transimpedance Ripple
Total Jitter
Deterministic Jitter
Linear Output Range
DC PERFORMANCE
Power Dissipation
Input Voltage
Output Common Mode Voltage
Output Impedance
PD FILTER Resistance
PD FILTER Capacitance
RSSI Sensitivity
RSSI Offset
Conditions
1
−3 dB
DC to 4.0 GHz
100MHz
I
IN
= 10µA
I
IN
= 500µA
DC to 4.25GHz, differential
Pavg
pk-pk diff, I
IN,PK- PK
= 2.0 mA
20% to 80% rise/fall time I
IN,PK- PK
= 2.5 mA
<10 MHz
50 MHz to 1.0 GHz
50 MHz to 1.0 GHz
10 µA < I
IN,PK- PK
≤ 100 µA
100 µA < I
IN,PK- PK
≤ 2.0 µA
10 µA < I
IN,PK- PK
≤ 100 µA
100 µA < I
IN,PK- PK
≤ 2.0 µA
Pk-pk, < 1dB compression
Min
3.3
2800
Typ
3.8
520
3800
15
TBD
−20
3.25
250
40
−40
TBD
TBD
TBD
TBD
2
4
TBD
Max
ADN2882
Unit
GHz
nA
V/A
kHz
kHz
dB
dBm
mV
ps
dB
ps
dB
ps
ps
ps
Ps
mV
TBD
4800
−12
350
TBD
180
TBD
TBD
I
IN,AVE
= 0
DC terminated to VCC
Single-ended
R
F
C
F
I
IN, AVE
= 0 uA to 1 mA
I
IN, AVE
= 0 uA
50
75
0.85
Vcc − 0.12
50
200
20
0.8
TBD
120
mW
V
V
Ω
Ω
pF
V/mA
mV
1
2
Min/Max VCC = +3.3 V ± 0.3 V, T
a
= −40°C to +95°C; Typ V
CC
= 3.3 V, T
a
= +25C.
Photodiode capacitance C
D
= 0.5pF ± 0.15pF, photodiode resistance = 5 Ω . Load impedance = 50Ω (each output, ac-coupled).
3
10
–10
BER, 10 dB ER,
Rev. PrD Nov. 04 2004 | Page 3 of 10
ADN2882
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
Supply Voltage (V
CC
to GND)
Maximum Input Current
Storage Temperature Range
Operating Ambient Temperature Range
Maximum Junction Temperature
Die Attach Temperature (<60 seconds)
Rating
5V
10 mA
−65°C to +125°C
−40°C to +95°C
165°C
450°C
Preliminary Technical Data
Stresses above those listed under Absolute Maximum Rating
may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or
any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. PrD Nov. 04 2004 | Page 4 of 10
Preliminary Technical Data
PAD DESCRIPTION
ADN2882
B
FI LT ER
RSSI
Table 3.
Pad No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
Pad Name
GND
IN
TEST
FILTER
FILTER
GND
RSSI
CAP
GND
GND
OUTB
OUT
GND
GND
VCCFILTER
VCC
VCC
Function
Ground (input return).
Current input. Bond directly to PD anode.
Test probe Pad. Leave floating.
Filter Output
Filter Output
Ground.
Voltage Output (provides average input current reading)
Low Frequency setpoint. Connect with 1 nF capacitance to GND for < 15 kHz.
Ground.
Ground (output return).
Negative Output. Drives 50 Ω termination (ac or dc termination).
Positive Output. Drives 50 Ω termination (ac or dc termination).
Ground (output return).
Ground.
Filter Supply. Connect to V
CC
to enable on-chip 200 Ω, 20 pf Filter.
3.3 V positive Supply. Recommended bypass to GND is 200 pF RF capacitor.
3.3 V positive Supply. Recommended bypass to GND is 200 pF RF capacitor.
Rev. PrD Nov. 04 2004 | Page 5 of 10
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