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BDW94CF

Description
PNP Epitaxial Silicon Transistor
CategoryDiscrete semiconductor    The transistor   
File Size415KB,4 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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BDW94CF Overview

PNP Epitaxial Silicon Transistor

BDW94CF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)12 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
BDW94CF PNP Epitaxial Silicon Transistor
July 2005
BDW94CF
PNP Epitaxial Silicon Transistor
Power Linear and Switching Application
• Power Darlington TR
• Complement to BDW93CF Respectively
1
TO-220F
2.Collector
3.Emitter
1.Base
Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current (DC)
Collector Current (Pulse) *
Base Current
T
a
= 25°C unless otherwise noted
Parameter
Value
-100
-100
-12
-15
-0.2
30
150
-65 ~ 150
Units
V
V
A
A
A
W
°C
°C
Collector Dissipation (T
C
= 25°C)
Junction Temperature
Storage Temperature
T
C
= 25°C unless otherwise noted
Electrical Characteristics
Symbol
V
CEO(sus)
I
CBO
I
CEO
I
EBO
h
FE
Parameter
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain *
Conditions
I
C
-100mA, I
B
= 0
V
CB
= -100V, I
E
= 0
VV
CE
= -100V, I
B
= 0
V
EB
= -5V, I
C
= 0
V
CE
= -3V, I
C
= -3A
V
CE
= -3V, I
C
= -5A
V
CE
= -3V, I
C
= -10A
I
C
= -5A, I
B
= -20mA
I
C
= -10A, I
B
= -100mA
I
C
= -5A, I
B
= -20mA
I
C
= -10A, I
B
= -100mA
I
F
= -5A
I
F
= -10A
Min.
-100
Typ.
Max
-100
-1
-2
Units
V
µA
mA
mA
1000
750
100
20000
-2
-3
-2.5
-4
-1.3
-1.8
-2
-4
V
V
V
V
V
V
V
CE(sat)
V
BE(sat)
V
F
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage *
Parallel Diode Forward Voltage *
* Pulse Test: PW = 300µs, Duty Cycle = 1.5% Pulsed
©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
BDW94CF Rev. A
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