PJ2N3906
PNP Epitaxial Silicon Transistor
GENERAL PURPO SE TRANSISTO R
•
•
Collector-Emitter Voltage: V
CEO
= 40V
Collector Dissipation: P
C (max)
= 625 mW
.
TO-92
SOT-23
ABSOLUTE MAXIMUM RATINGS
(Ta = 25
℃)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Value
40
40
5
200
625
150
-55~150
Unit
V
V
V
mA
mW
℃
℃
Device
PJ2N3906CT
PJ2N3906CX
Operating Temperature
-20℃½+85℃
Package
TO-92
SOT-23
P in : 1. Emitter
2. Base
3. Collector
P in : 1. Base
2. Emitter
3. Collector
ORDERING INFORMATION
ELECTRICAL CHARACTERISTICS
(T
a
= 25℃)
Characte ristic
Collector-Base Breakdown Voltage
*Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Curent
Base Cut-off Current
*DC Current Gain
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CEX
I
BL
h
FE
Te st Conditions
I
C
= 10μA , I
E
=0
I
C
= 1mA , I
B
=0
I
E
=10μA , I
C
=0
V
CE
= 30V , V
BE
= 3V
V
CE
= 30V , V
BE
= 3V
Ic =0.1mA, V
CE
=1V
Ic =1mA, V
CE
=1V
Ic=10mA; V
CE
=1V
Ic =50 mA, V
CE
=1V
Ic =100 mA, V
CE
=1V
I
C
= 10 mA , I
B
=1mA
I
C
= 50mA , I
B
=5mA
I
C
= 10 mA , I
B
=1mA
I
C
= 50mA , I
B
=5mA
V
CB
=5V, I
E
=0
f=1MHz
Ic =10 mA, V
CE
=20V
f=100MHz
Vcc =3 V, V
BE
=0.5V
Ic =10 mA, I
B1
=1mA
Vcc =3V, Ic =1mA
I
B1
=I
B2
=1 mA
Min
40
40
6
Typ
Max
Uni
t
V
V
V
nA
nA
50
50
60
80
100
60
30
0.65
300
0.25
0.4
0.85
0.95
4.5
*Collector-Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Produce
Turn On Time
Turn Off Time
V
CE(sat)
V
BE(sat)
C
ob
f
T
t
on
t
off
V
V
V
V
pF
MHz
250
70
250
ns
ns
*Pulse Test: Pulse Width
≤
300μs.Duty Cycle
≤
2%
1-3
2002/01.rev.A
PJ2N3906
PNP Epitaxial Silicon Transistor
DC CURRENT GAIN
CURRENT GAIN-BANDWIDTH PRODUCT
BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE
OUTPUT CAPACITANCE
2-3
2002/01.rev.A
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