Data Sheet
FEATURES
1.8 V to 5.5 V operation
Ultralow on resistance
0.4 Ω typical
0.6 Ω maximum at 5 V supply
Excellent audio performance, ultralow distortion
0.07 Ω typical
0.14 Ω maximum R
ON
flatness
High current carrying capability
400 mA continuous
600 mA peak current at 5 V
Automotive temperature range: −40°C to +125°C
Rail-to-rail switching operation
Typical power consumption (<0.1 µW)
0.4 Ω CMOS, Dual DPDT Switch
in WLCSP/LFCSP/TSSOP
ADG888
FUNCTIONAL BLOCK DIAGRAM
ADG888
S1A
D1
S1B
S2A
D2
S2B
IN1
S3A
D3
S3B
S4A
D4
S4B
IN2
05432-001
APPLICATIONS
Cellular phones
PDAs
MP3 players
Power routing
Battery-powered systems
PCMCIA cards
Modems
Audio and video signal routing
Communication systems
Data switching
SWITCHES SHOWN
FOR A LOGIC 1 INPUT
Figure 1.
GENERAL DESCRIPTION
The
ADG888
is a low voltage, dual DPDT (double-pole,
double-throw) CMOS device optimized for high performance
audio switching. With its low power and small physical size, it is
ideal for portable devices.
This device offers ultralow on resistance of less than 0.8 Ω over
the full temperature range, making it an ideal solution for
applications requiring minimal distortion through the switch.
The
ADG888
also has the capability of carrying large amounts
of current, typically 400 mA at 5 V operation.
When on, each switch conducts equally well in both directions
and has an input signal range that extends to the supplies. The
ADG888
exhibits break-before-make switching action.
The
ADG888
is available in a 16-ball WLCSP, 16-lead LFCSP,
and a 16-lead TSSOP. These packages make the
ADG888
the
ideal solution for space-constrained applications.
PRODUCT HIGHLIGHTS
1.
2.
3.
4.
<0.6 Ω over full temperature range of −40°C to +125°C.
High current handling capability (400 mA continuous
current at 5 V).
Low THD + N (0.008% typical).
Tiny 16-ball WLCSP, 16-lead LFCSP, and 16-lead TSSOP.
Rev. C
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Trademarks and registered trademarks are the property of their respective owners.
ADG888
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Product Highlights ........................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Absolute Maximum Ratings ............................................................ 5
Data Sheet
ESD Caution...................................................................................5
Pin Configurations and Function Descriptions ............................6
Typical Performance Characteristics ..............................................8
Test Circuits..................................................................................... 10
Terminology .................................................................................... 12
Outline Dimensions ....................................................................... 13
Ordering Guide .......................................................................... 14
REVISION HISTORY
3/2017—Rev. B to Rev. C
Changes to Figure 4 .......................................................................... 7
Changes to Figure 19 ...................................................................... 10
Changes to Ordering Guide .......................................................... 14
4/2016—Rev. A to Rev. B
Changed CB-16 to CB-16-1 and CP-16-4 to
CP-16-23 ......................................................................... Throughout
Changes to Figure 2 and Table 4 ..................................................... 6
Moved Figure 4 ................................................................................. 7
Added Table 5; Renumbered Sequentially .................................... 8
Updated Outline Dimensions ....................................................... 13
Changes to Ordering Guide .......................................................... 14
12/2006—Rev. 0 to Rev. A
Updated Format .................................................................. Universal
Changes to Table 2.............................................................................4
Changes to Table 3.............................................................................5
Changes to Ordering Guide .......................................................... 13
7/2005—Revision 0: Initial Version
Rev. C | Page 2 of 17
Data Sheet
SPECIFICATIONS
V
DD
= 4.2 V to 5.5 V, GND = 0 V, unless otherwise noted.
Table 1.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (R
ON
)
On Resistance Match Between
Channels (∆R
ON
)
On Resistance Flatness (R
FLAT (ON)
)
LEAKAGE CURRENTS
Source Off Leakage I
S
(Off )
Channel On Leakage I
D
, I
S
(On)
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current
I
INL
or I
INH
C
IN
, Digital Input Capacitance
DYNAMIC CHARACTERISTICS
2
t
ON
t
OFF
Break-Before-Make Time Delay (t
BBM
)
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
+25°C
B Version
1
Y Version
1
0 to V
DD
0.4
0.48
0.04
0.06
0.07
0.11
±0.2
±0.2
2.0
0.8
0.005
±0.1
2
22
30
13
17
9
70
−67
−99
−67
Total Harmonic Distortion (THD + N)
Insertion Loss
−3 dB Bandwidth
C
S
(Off )
C
D
, C
S
(On)
POWER REQUIREMENTS
I
DD
1
2
ADG888
Unit
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA typ
V min
V max
µA typ
µA max
pF typ
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
dB typ
%
dB typ
MHz typ
pF typ
pF typ
µA typ
µA max
Test Conditions/Comments
0.55
0.6
V
DD
= 4.2 V, V
S
= 0 V to V
DD
, I
DS
= 100 mA
See Figure 16
V
DD
= 4.2 V, V
S
= 2.2 V, I
DS
= 100 mA
0.07
0.13
0.075
0.14
V
DD
= 4.2 V, V
S
= 0 V to V
DD
I
DS
= 100 mA
V
DD
= 5.5 V
V
S
= 1 V/4.5 V, V
D
= 4.5 V/1 V; see Figure 17
V
S
= V
D
= 1 V or 4.5 V; see Figure 18
V
IN
= V
INL
or V
INH
33
18
35
19
5
0.008
−0.03
29
58
110
0.003
1
4
R
L
= 50 Ω, C
L
= 35 pF
V
S
= 3 V/0 V; see Figure 19
R
L
= 50 Ω, C
L
= 35 pF
V
S
= 3 V/0 V; see Figure 19
R
L
= 50 Ω, C
L
= 35 pF
V
S1
= V
S2
= 3 V; see Figure 20
V
S
= 0 V, R
S
= 0 Ω, C
L
= 1 nF; see Figure 21
R
L
= 50 Ω, C
L
= 5 pF, f = 100 kHz; see Figure 22
Adjacent channel; R
L
= 50 Ω, C
L
= 5 pF,
f = 100 kHz; see Figure 25
Adjacent switch; R
L
= 50 Ω, C
L
= 5 pF, f = 100 kHz;
see Figure 23
R
L
= 32 Ω, f = 20 Hz to 20 kHz, V
S
= 3 V p-p
R
L
= 50 Ω, C
L
= 5 pF; see Figure 24
R
L
= 50 Ω, C
L
= 5 pF; see Figure 24
V
DD
= 5.5 V
Digital inputs = 0 V or 5.5 V
Temperature range for the Y version is −40°C to +125°C for the TSSOP and LFCSP; temperature range for the B version is −40°C to +85°C for the WLCSP.
Guaranteed by design, not production tested.
Rev. C | Page 3 of 17
ADG888
V
DD
= 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted.
Table 2.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (R
ON
)
On Resistance Match Between
Channels (∆R
ON
)
On Resistance Flatness (R
FLAT (ON)
)
LEAKAGE CURRENTS
Source Off Leakage I
S
(Off )
Channel On Leakage I
D
, I
S
(On)
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current
I
INL
or I
INH
C
IN
, Digital Input Capacitance
DYNAMIC CHARACTERISTICS
2
t
ON
t
OFF
Break-Before-Make Time Delay (t
BBM
)
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
+25°C
B Version
1
Y Version
1
0 to V
DD
0.5
0.7
0.045
0.072
0.16
0.75
0.8
Unit
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA typ
1.3
0.8
0.005
±0.1
2
28
43
13
20
14
50
−67
−99
−67
Total Harmonic Distortion (THD + N)
Insertion Loss
–3 dB Bandwidth
C
S
(Off )
C
D
, C
S
(On)
POWER REQUIREMENTS
I
DD
1
2
Data Sheet
Test Conditions/Comments
V
DD
= 2.7 V, V
S
= 0 V to V
DD
I
S
= 100 mA; see Figure 16
V
DD
= 2.7 V, V
S
= 1 V
I
S
= 100 mA
V
DD
= 2.7 V, V
S
= 0 V to V
DD
I
S
= 100 mA
V
DD
= 3.6 V
V
S
= 1 V/2.6 V, V
D
= 2.6 V/1 V; see Figure 17
V
S
= V
D
= 1 V or 2.6 V; see Figure 18
0.077
0.083
0.262
±0.2
±0.2
V min
V max
µA typ
µA max
pF typ
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
V
IN
= V
INL
or V
INH
47
21
50
22
5
0.01
−0.04
29
60
115
0.003
1
2
R
L
= 50 Ω, C
L
= 35 pF; see Figure 19
V
S
= 1.5 V/0 V
R
L
= 50 Ω, C
L
= 35 pF; see Figure 19
V
S
= 1.5 V/0 V
R
L
= 50 Ω, C
L
= 35 pF
V
S1
= V
S2
= 1.5 V; see Figure 20
V
S
= 0 V, R
S
= 0 Ω, C
L
= 1 nF; see Figure 21
R
L
= 50 Ω, C
L
= 5 pF, f = 100 kHz; see Figure 22
Adjacent channel; R
L
= 50 V, C
L
= 5 pF, f = 100 kHz;
see Figure 25
dB typ
Adjacent switch; R
L
= 50 Ω, C
L
= 5 pF, f = 100 kHz;
see Figure 23
%
R
L
= 32 Ω, f = 20 Hz to 20 kHz, V
S
= 1 V p-p
dB typ
R
L
= 50 Ω, C
L
= 5 pF; see Figure 24
MHz typ R
L
= 50 Ω, C
L
= 5 pF; see Figure 24
pF typ
pF typ
V
DD
= 3.6 V
µA typ Digital inputs = 0 V or 3.6 V
µA max
Temperature range for the Y version is −40°C to +125°C for the TSSOP and LFCSP; temperature range for the B version is −40°C to +85°C for the WLCSP.
Guaranteed by design, not production tested.
Rev. C | Page 4 of 17
Data Sheet
ABSOLUTE MAXIMUM RATINGS
T
A
= 25°C, unless otherwise noted.
Table 3.
Parameter
V
DD
to GND
Analog Inputs, Digital Inputs
1
Peak Current, S or D
5 V operation
Continuous Current, S or D
5 V operation
Operating Temperature Range
Automotive (Y Version)
TSSOP and LFCSP
Industrial (B version)
WLCSP
Storage Temperature Range
Junction Temperature
Thermal Impedance
16-Lead TSSOP
θ
JA
(4-Layer Board)
θ
JC
16-Lead WLCSP
θ
JA
(4-Layer Board)
16-Lead LFCSP
θ
JA
(4-Layer Board)
Reflow Soldering (RoHS Compliant)
Peak Temperature
Time at Peak Temperature
1
ADG888
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
Only one absolute maximum rating can be applied at any one
time.
Rating
−0.3 V to +6 V
−0.3 V to V
DD
+ 0.3 V or 30 mA,
whichever occurs first
600 mA (pulsed at 1 ms,
10% duty cycle max)
400 mA
ESD CAUTION
−40°C to +125°C
−40°C to +85°C
−65°C to +150°C
150°C
112°C/W
27.6°C/W
130°C/W
30.4°C/W
260(+0/−5)°C
10 sec to 40 sec
Overvoltages at IN, S, or D are clamped by internal diodes. Limit current to
the maximum ratings given.
Rev. C | Page 5 of 17
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