capacitance bridge (Boonton Electronics Model 75A or
equivalent).
2. TR, TUNING RATIO
TR is the ratio of C
T
measured at 2.0 Vdc divided by C
T
measured at 30 Vdc.
3. Q, FIGURE OF MERIT
TC
C
is guaranteed by comparing C
T
at V
R
= 4.0 Vdc,
f = 1.0 MHz, T
A
= −65°C with C
T
at V
R
= 4.0 Vdc,
f = 1.0 MHz, T
A
= +85°C in the following equation,
which defines TC
C
:
TCC
+
CT() 85°C) – CT(–65°C)
106
·
85
)
65
CT(25°C)
Q is calculated by taking the G and C readings of an
admittance bridge at the specified frequency and
substituting in the following equations:
Q
+
2pfC
G
Accuracy limited by measurement of C
T
to
±0.1
pF.
(Boonton Electronics Model 33AS8 or equivalent). Use
Lead Length
[
1/16”.
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2
MMVL2105T1
TYPICAL DEVICE CHARACTERISTICS
1000
500
C T , DIODE CAPACITANCE (pF)
200
100
50
20
10
5.0
2.0
1.0
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
20
30
T
A
= 25°C
f = 1.0 MHz
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance versus Reverse Voltage
1.040
NORMALIZED DIODE CAPACITANCE
I R , REVERSE CURRENT (nA)
1.030
1.020
1.010
1.000
0.990
0.980
0.970
0.960
−75
−50
NORMALIZED TO C
T
at T
A
= 25°C
V
R
= (CURVE)
−25
0
+25
+50
+75
T
J
, JUNCTION TEMPERATURE (°C)
+100
+125
V
R
= 4.0 Vdc
V
R
= 30 Vdc
V
R
= 2.0 Vdc
100
50
20
10
5.0
2.0
1.0
0.50
0.20
0.10
0.05
0.02
0.01
T
A
= 75°C
T
A
= 125°C
T
A
= 25°C
0
5.0
10
15
20
25
30
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 2. Normalized Diode Capacitance versus
Junction Temperature
10,000
1000
Figure 3. Reverse Current versus Reverse Bias
Voltage
Q, FIGURE OF MERIT
Q, FIGURE OF MERIT
T
A
= 25°C
f = 50 MHz
1000
100
T
A
= 25°C
V
R
= 4.0 Vdc
100
10
10
100
f, FREQUENCY (MHz)
1000
100
0.1
10
1.0
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Figure of Merit versus Reverse Voltage
Figure 5. Figure of Merit versus Frequency
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3
MMVL2105T1
PACKAGE DIMENSIONS
SOD−323
CASE 477−02
ISSUE G
H
E
D
b
1
2
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF
RADIUS.
MILLIMETERS
DIM MIN
NOM MAX
A
0.80
0.90
1.00
A1
0.00
0.05
0.10
A3
0.15 REF
b
0.25
0.32
0.4
C
0.089
0.12 0.177
D
1.60
1.70
1.80
E
1.15
1.25
1.35
L
0.08
H
E
2.30
2.50
2.70
STYLE 1:
PIN 1. CATHODE
2. ANODE
INCHES
NOM MAX
0.035 0.040
0.002 0.004
0.006 REF
0.010 0.012 0.016
0.003 0.005 0.007
0.062 0.066 0.070
0.045 0.049 0.053
0.003
0.090 0.098 0.105
A3
A
L
NOTE 5
MIN
0.031
0.000
C
NOTE 3
A1
SOLDERING FOOTPRINT*
0.63
0.025
0.83
0.033
1.60
0.063
2.85
0.112
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
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