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STE50DE100

Description
Bipolar Transistors - BJT POWER MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size298KB,11 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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Bipolar Transistors - BJT POWER MOSFET

STE50DE100 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerSTMicroelectronics
Product CategoryBipolar Transistors - BJT
RoHSDetails
Mounting StyleThrough Hole
Package / CaseISOTOP
Transistor PolarityNPN
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 150 C
DC Current Gain hFE Max13
PackagingTube
DC Collector/Base Gain hfe Min3
Pd - Power Dissipation160 W
Factory Pack Quantity10
STE50DE100
Hybrid Emitter Switched Bipolar Transistor
ESBT 1000 V - 50 A - 0.026
General features
V
CS(ON)
1.3 V
I
C
50 A
R
CS(ON)
High voltage / high current Cascode
configuration
Ultra low equivalent on resistance
Very fast-switch up to 150 kHz
Ultra low C
iss
Low dynamic V
CS(ON)
Applications
Industrial converters
Welding
Description
The STE50DE100 is manufactured in a hybrid
structure, using dedicated high voltage Bipolar
and low voltage MOSFET technologies, aimed to
providing the best performance in ESBT topology.
The STE50DE100 is designed for use in industrial
converters and/or welding equipment.
Order codes
O
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Part Number
Marking
STE50DE100
STE50DE100
January 2007
W
0.026
Internal schematic diagrams
so
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Package
ISOTOP
Rev 2
®
ISOTOP
P
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Packing
Tube
1/11
www.st.com
11

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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