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MBRT120100

Description
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 3TWR 20-100V 120A100P/70R
Categorysemiconductor    Discrete semiconductor   
File Size461KB,4 Pages
ManufacturerGeneSiC
Websitehttp://www.genesicsemi.com/
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MBRT120100 Overview

Schottky Diodes & Rectifiers SI PWR SCHOTTKY 3TWR 20-100V 120A100P/70R

MBRT120100 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerGeneSiC
Product CategorySchottky Diodes & Rectifiers
Shipping RestrictionsThis product may require additional documentation to export from the United States.
RoHSDetails
ProductSchottky Diodes
Mounting StyleSMD/SMT
Package / CaseModule
If - Forward Current120 A
Vrrm - Repetitive Reverse Voltage100 V
Vf - Forward Voltage0.88 V
Ifsm - Forward Surge Current800 A
TechnologySi
Ir - Reverse Current1 uA
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 150 C
PackagingBulk
Operating Temperature Range- 40 C to + 150 C
Factory Pack Quantity25
MBRT12045 thru MBRT120100R
Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 45 V to 100 V V
RRM
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
Three Tower Package
V
RRM
= 45 V - 100 V
I
F(AV)
= 120 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
T
j
T
stg
Conditions
MBRT12045(R) MBRT12060(R) MBRT12080(R) MBRT120100(R) Unit
45
32
45
-55 to 150
-55 to 150
60
42
60
-55 to 150
-55 to 150
80
56
80
-55 to 150
-55 to 150
100
70
100
-55 to 150
-55 to 150
V
V
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Average forward current (per
pkg)
Peak forward surge current
(per leg)
Maximum instantaneous
forward voltage (per leg)
Maximum instantaneous
reverse current at rated DC
blocking voltage (per leg)
Symbol
I
F(AV)
I
FSM
V
F
I
R
Conditions
T
C
= 125 °C
t
p
= 8.3 ms, half sine
I
FM
= 60 A, T
j
= 25 °C
T
j
= 25 °C
T
j
= 100 °C
T
j
= 150 °C
MBRT12045(R) MBRT12060(R) MBRT12080(R) MBRT120100(R) Unit
120
800
0.70
1
10
30
0.80
120
800
0.75
1
10
30
0.80
120
800
0.84
1
10
30
0.80
120
800
0.84
1
10
30
0.80
A
A
V
mA
Thermal characteristics
Thermal resistance, junction-
case (per leg)
R
ΘJC
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
1

MBRT120100 Related Products

MBRT120100 MBRT120100R
Description Schottky Diodes & Rectifiers SI PWR SCHOTTKY 3TWR 20-100V 120A100P/70R Schottky Diodes & Rectifiers SI PWR SCHOTTKY 3TWR 20-100V 120A100P/70R
Product Attribute Attribute Value Attribute Value
Manufacturer GeneSiC GeneSiC
Product Category Schottky Diodes & Rectifiers Schottky Diodes & Rectifiers
Shipping Restrictions This product may require additional documentation to export from the United States. This product may require additional documentation to export from the United States.
RoHS Details Details
Product Schottky Diodes Schottky Diodes
Mounting Style SMD/SMT SMD/SMT
Package / Case Module Module
If - Forward Current 120 A 120 A
Vrrm - Repetitive Reverse Voltage 100 V 100 V
Vf - Forward Voltage 0.88 V 0.88 V
Ifsm - Forward Surge Current 800 A 800 A
Technology Si Si
Ir - Reverse Current 1 uA 1 uA
Minimum Operating Temperature - 40 C - 40 C
Maximum Operating Temperature + 150 C + 150 C
Packaging Bulk Bulk
Operating Temperature Range - 40 C to + 150 C - 40 C to + 150 C
Factory Pack Quantity 25 25
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