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2SK3563Q

Description
MOSFET N-Ch 500V 5A Rdson 1.5 Ohm
Categorysemiconductor    Discrete semiconductor   
File Size223KB,7 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SK3563Q Overview

MOSFET N-Ch 500V 5A Rdson 1.5 Ohm

2SK3563Q Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerToshiba Semiconductor
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220FP-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage500 V
Id - Continuous Drain Current5 A
Rds On - Drain-Source Resistance1.5 Ohms
Vgs - Gate-Source Voltage30 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
Pd - Power Dissipation35 W
Channel ModeEnhancement
PackagingTube
Height15 mm
Length10 mm
Transistor Type1 N-Channel
Width4.5 mm
Fall Time38 ns
Rise Time55 ns
Factory Pack Quantity50
Typical Turn-Off Delay Time48 ns
Typical Turn-On Delay Time12 ns
Unit Weight0.211644 oz
2SK3563
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3563
Switching Regulator Applications
Low drain-source ON resistance: R
DS (ON)
= 1.35
(typ.)
High forward transfer admittance: |Y
fs
| = 3.5 S (typ.)
Low leakage current: I
DSS
= 100
μA
(max) (V
DS
= 500 V)
Enhancement mode: V
th
= 2.0 to 4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kΩ)
Gate-source voltage
DC
Drain current
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
500
500
±30
5
20
35
180
5
3.5
150
-55~150
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
Unit
V
V
V
Pulse (t
=
1 ms)
(Note 1)
Drain power dissipation (Tc
=
25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
SC-67
2-10U1B
Weight : 1.7 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch-c)
R
th (ch-a)
Max
3.57
62.5
Unit
°C/W
°C/W
1
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: V
DD
=
90 V, T
ch
=
25°C(initial), L
=
12.2 mH, I
AR
=
5 A, R
G
=
25
Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
3
1
2009-09-29
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