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DZ37120D0L

Description
Zener Diodes 12V 5% 150mW FLT LD 1.2x1.2mm
CategoryDiscrete semiconductor    diode   
File Size328KB,6 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
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DZ37120D0L Overview

Zener Diodes 12V 5% 150mW FLT LD 1.2x1.2mm

DZ37120D0L Parametric

Parameter NameAttribute value
package instructionR-PDSO-F3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeR-PDSO-F3
Humidity sensitivity level1
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.15 W
Nominal reference voltage12 V
surface mountYES
technologyZENER
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance5%
Working test current5 mA
Base Number Matches1
Doc No.
TT4-EA-12712
Revision.
3
Product Standards
Zener Diode
DZ37120D0L
DZ37120D0L
Silicon epitaxial planar type
For surge absorption circuit
DZ3S120D in SSSMini3 type package
Features
Excellent rising characteristics of zener current Iz
Low zener operating resistance Rz
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Unit: mm
1.2
0.3
3
0.13
1
2
0.2
0.8
1.2
0.52
(0.4) (0.4)
0.8
Marking Symbol:
05
Packaging
Embossed type (Thermo-compression sealing) 10 000 pcs / reel (standard)
1. Cathode1
2. Cathode2
3. Anode1,2
Panasonic
JEITA
Code
SSSMini3-F2-B
SC-105AA
SOT-723
Absolute Maximum Ratings Ta = 25
C
Parameter
Symbol
Total power dissipation
Electrostatic discharge
*2
Junction temperature
Operating ambient temperature
Storage temperature
*1
Rating
150
±10
150
-40 to +85
-55 to +150
Unit
mW
kV
°C
°C
°C
PT
ESD
Tj
Topr
Tstg
Internal Connection
3
Note) *1: Mounted on glass epoxy print board. ( 45 mm x 45 mm x 1 mm)
(2 Diode total)
Solder in ( Recommended land pattern)
*2:
Test method:IEC61000_4_2(C = 150 pF,R = 330
,
Contact discharge:10 times)
1
2
Electrical Characteristics Ta = 25
C 
3
C
Parameter
Symbol
Forward voltage
*1, *2
Zener voltage
Zener operating resistance
Zener rise operating resistance
Reverse current
Temperature coefficient of zener voltage
VF
VZ
RZ
RZK
IR
SZ
Conditions
IF = 10 mA
IZ = 5 mA
IZ = 5 mA
IZ = 0.5 mA
VR = 9 V
IZ = 5 mA
Min
11.40
Typ Max
1.0
12.60
Unit
V
V
μA
mV/°C
30
80
0.05
8.5
*3
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes.
2. *1: The temperature must be controlled 25°C for VZ mesurement.
VZ value measured at other temperature must be adjusted to VZ (25°C)
*2: VZ guaranted 20 ms after current flow.
*3: Tj = 25°C to 150°C
Page 1 of 4
Established : 2010-08-05
Revised
: 2013-10-21
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