DIM200PLM33-A000
DIM200PLM33-A000
IGBT Chopper Module
Preliminary Information
Replaces issue April 2003, version DS5597-1.1
DS5597-2.0 May 2003
FEATURES
I
I
I
I
KEY PARAMETERS
V
CES
V
CE(sat)
*
I
C
I
C(PK)
(typ)
(max)
(max)
3300V
3.2V
200A
400A
10µs Short Circuit Withstand
High Thermal Cycling Capability
Non Punch Through Silicon
Isolated MMC Base with AlN Substrates
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
I
I
Choppers
Traction Auxiliaries
1(A/C2)
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 2400A.
The DIM200PLM33-A000 is a 3300V, n channel
enhancement mode insulated gate bipolar transistor (IGBT)
chopper module configured with the lower arm of the bridge
controlled. The IGBT has a wide reverse bias safe operating
area (RBSOA) plus full 10µs short circuit withstand. This device
is optimised for applications requiring high thermal cycling
capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
2(K)
8(C
2)
3(E2)
7(E
2)
6(G
2)
Fig. 1 Chopper circuit diagram - lower arm control
ORDERING INFORMATION
Order As:
DIM200PLM33-A000
Note: When ordering, please use the whole part number.
Outline type code:
P
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM200PLM33-A000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25˚C unless stated otherwise
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
V
isol
Q
PD
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Isolation voltage - per module
Partial discharge - per module
T
case
= 85˚C
1ms, T
case
= 115˚C
T
case
= 25˚C, T
j
= 150˚C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V
1
= 2450V, V
2
= 1800V, 50Hz RMS
V
GE
= 0V
-
Test Conditions
Max.
3300
±20
200
400
2608
6000
10
Units
V
V
A
A
W
V
pC
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
Baseplate material:
Creepage distance:
Clearance:
CTI (Critical Tracking Index):
Symbol
R
th(j-c)
AlN
AlSiC
33mm
20mm
175
Parameter
Thermal resistance - transistor (IGBT arm)
Test Conditions
Continuous dissipation -
junction to case
R
th(j-c)
Thermal resistance - diode (IGBT arm)
Thermal resistance - diode (diode arm)
R
th(c-h)
Thermal resistance - case to heatsink
(per module)
T
j
Junction temperature
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
T
stg
-
Storage temperature range
Screw torque
Mounting - M6
Electrical connections - M5
-
-
-
–40
-
-
-
-
-
-
-
150
125
125
5
4
˚C
˚C
˚C
Nm
Nm
-
-
-
-
-
-
96
96
16
˚C/kW
˚C/kW
˚C/kW
Min.
-
Typ.
-
Max.
48
Units
˚C/kW
2/6
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM200PLM33-A000
ELECTRICAL CHARACTERISTICS
T
case
= 25˚C unless stated otherwise.
Symbol
I
CES
Parameter
Collector cut-off current
(IGBT arm)
I
GES
V
GE(TH)
V
CE(sat)†
Gate leakage current (IGBT arm)
Gate threshold voltage (IGBT arm)
Collector-emitter saturation voltage
(IGBT arm)
I
F
Diode forward current (IGBT arm)
Diode forward current (diode arm)
I
FM
Diode maximum forward current
(IGBT arm)
Diode maximum forward current
(diode arm)
V
F†
Diode forward voltage
I
F
= 200A (IGBT arm)
I
F
= 200A (Diode arm)
I
F
= 200A, T
case
= 125˚C (IGBT arm)
I
F
= 200A, T
case
= 125˚C (diode arm)
C
ies
C
res
L
M
R
INT
SC
Data
Input capacitance (IGBT arm)
Reverse transfer capacitance (IGBT arm)
Module inductance - per switch
Internal transistor resistance (IGBT arm)
Short circuit. I
SC
V
CE
= 25V, V
GE
= 0V, f = 1MHz
V
CE
= 25V, V
GE
= 0V, f = 1MHz
-
-
T
j
= 125˚C, V
CC
= 2500V,
t
p
≤
10µs, V
CE(max)
= V
CES
– L*. di/dt
IEC 60747-9
I
1
I
2
-
-
-
-
-
-
-
-
2.5
2.5
2.5
2.5
45
2.5
30
0.54
1300
1100
-
-
-
-
-
-
-
-
V
V
V
V
nF
nF
nH
mΩ
A
A
t
p
= 1ms
-
400
-
A
Test Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125˚C
V
GE
=
±20V,
V
CE
= 0V
I
C
=20mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 200A
V
GE
= 15V, I
C
= 200A, , T
case
= 125˚C
DC
DC
t
p
= 1ms
Min.
-
-
-
4.5
-
-
-
-
-
Typ.
-
-
-
5.5
3.2
4.0
200
200
400
Max.
1
15
2
6.5
-
-
-
-
-
Units
mA
mA
µA
V
V
V
A
A
A
Note:
†
Measured at the power busbars and not the auxiliary terminals)
L* is the circuit inductance + L
M
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/6
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DIM200PLM33-A000
ELECTRICAL CHARACTERISTICS - IGBT ARM
T
case
= 25˚C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
g
Q
rr
I
rr
E
REC
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
I
F
= 200A, V
R
= 1800V,
dI
F
/dt = 1100A/µs
Test Conditions
I
C
= 200A
V
GE
=
±15V
V
CE
= 1800V
R
G(ON)
= R
G(OFF)
=10Ω
C
ge
= 33nF
L ~ 100nH
Min.
-
-
-
-
-
-
-
-
-
-
Typ.
1300
200
170
640
250
290
6
115
165
130
Max.
-
-
-
-
-
-
-
-
-
-
Units
ns
ns
mJ
ns
ns
mJ
µC
µC
A
mJ
T
case
= 125˚C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Test Conditions
I
C
= 200A
V
GE
=
±15V
V
CE
= 1800V
R
G(ON)
= R
G(OFF)
=10Ω
C
ge
= 33nF
L ~ 100nH
I
F
= 200A, V
R
= 1800V,
dI
F
/dt = 1000A/µs
Min.
-
-
-
-
-
-
-
-
-
Typ.
1600
250
240
640
300
420
190
185
220
Max.
-
-
-
-
-
-
-
-
-
Units
ns
ns
mJ
ns
ns
mJ
µC
A
mJ
4/6
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM200PLM33-A000
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Nominal weight: 750g
Module outline type code: P
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/6
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