PBSS4220V
20 V, 2 A NPN low V
CEsat
(BISS) transistor
Rev. 01 — 6 February 2006
Product data sheet
1. Product profile
1.1 General description
NPN low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface
Mounted Device (SMD) plastic package.
PNP complement: PBSS5220V.
1.2 Features
s
s
s
s
s
Low collector-emitter saturation voltage V
CEsat
High collector current capability: I
C
and I
CM
High collector current gain (h
FE
) at high I
C
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
s
s
s
s
s
s
DC-to-DC conversion
MOSFET gate driving
Motor control
Charging circuits
Low power switches (e.g. motors, fans)
Portable applications
1.4 Quick reference data
Table 1:
V
CEO
I
C
I
CM
R
CEsat
[1]
Quick reference data
Conditions
open base
t
p
≤
300
µs
I
C
= 1 A;
I
B
= 100 mA
[1]
Symbol Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
Min
-
-
-
-
Typ
-
-
-
140
Max
20
2
4
175
Unit
V
A
A
mΩ
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
Philips Semiconductors
PBSS4220V
20 V, 2 A NPN low V
CEsat
(BISS) transistor
2. Pinning information
Table 2:
Pin
1
2
3
4
5
6
Pinning
Description
collector
collector
base
emitter
4
6
5
4
3
1, 2, 5, 6
Simplified outline
Symbol
collector
collector
1
2
3
sym014
3. Ordering information
Table 3:
Ordering information
Package
Name
PBSS4220V
-
Description
plastic surface mounted package; 6 leads
Version
SOT666
Type number
4. Marking
Table 4:
Marking codes
Marking code
N6
Type number
PBSS4220V
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
peak base current
total power dissipation
t
p
≤
300
µs
T
amb
≤
25
°C
[1] [4]
[2] [4]
[3] [4]
Conditions
open emitter
open base
open collector
t
p
≤
300
µs
Min
-
-
-
-
-
-
-
-
-
-
-
Max
20
20
5
2
4
0.3
0.6
0.3
0.5
0.9
150
Unit
V
V
V
A
A
A
A
W
W
W
°C
T
j
junction temperature
PBSS4220V_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 6 February 2006
2 of 13
Philips Semiconductors
PBSS4220V
20 V, 2 A NPN low V
CEsat
(BISS) transistor
Table 5:
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
T
amb
T
stg
[1]
[2]
[3]
[4]
Parameter
ambient temperature
storage temperature
Conditions
Min
−65
−65
Max
+150
+150
Unit
°C
°C
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Reflow soldering is the only recommended soldering method.
1.2
P
tot
(W)
0.8
006aaa424
(1)
(2)
0.4
(3)
0
0
40
80
120
160
T
amb
(°C)
(1) Ceramic PCB, Al
2
O
3
, standard footprint
(2) FR4 PCB, mounting pad for collector 1 cm
2
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves
PBSS4220V_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 6 February 2006
3 of 13
Philips Semiconductors
PBSS4220V
20 V, 2 A NPN low V
CEsat
(BISS) transistor
6. Thermal characteristics
Table 6:
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1] [4]
[2] [4]
[3] [4]
Min
-
-
-
-
Typ
-
-
-
-
Max
410
250
140
80
Unit
K/W
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
[3]
[4]
thermal resistance from
junction to solder point
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Reflow soldering is the only recommended soldering method.
10
3
Z
th(j-a)
(K/W)
10
2
006aaa425
duty cycle =
1
0.5
0.33
0.2
0.1
0.05
0.75
10
0.02
0.01
1
0
10
−1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
PBSS4220V_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 6 February 2006
4 of 13
Philips Semiconductors
PBSS4220V
20 V, 2 A NPN low V
CEsat
(BISS) transistor
7. Characteristics
Table 7:
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter
I
CBO
collector-base cut-off
current
collector-emitter cut-off
current
emitter-base cut-off
current
DC current gain
Conditions
V
CB
= 20 V; I
E
= 0 A
V
CB
= 20 V; I
E
= 0 A;
T
j
= 150
°C
V
CE
= 20 V; V
BE
= 0 V
V
EB
= 5 V; I
C
= 0 A
V
CE
= 2 V; I
C
= 1 mA
V
CE
= 2 V; I
C
= 100 mA
V
CE
= 2 V; I
C
= 500 mA
V
CE
= 2 V; I
C
= 1 A
V
CE
= 2 V; I
C
= 2 A
V
CEsat
collector-emitter
saturation voltage
I
C
= 100 mA; I
B
= 1 mA
I
C
= 500 mA; I
B
= 50 mA
I
C
= 1 A; I
B
= 50 mA
I
C
= 1 A; I
B
= 100 mA
I
C
= 2 A; I
B
= 100 mA
I
C
= 2 A; I
B
= 200 mA
R
CEsat
V
BEsat
V
BEon
t
d
t
r
t
on
t
s
t
f
t
off
f
T
C
c
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
-
220
220
220
200
120
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
480
440
410
360
220
35
70
145
140
275
270
140
0.95
1
0.8
9
29
38
200
40
240
210
11
Max
0.1
50
0.1
0.1
-
-
-
-
-
55
95
180
175
355
350
175
1.1
1.2
1.1
-
-
-
-
-
-
-
-
Unit
µA
µA
µA
µA
I
CES
I
EBO
h
FE
mV
mV
mV
mV
mV
mV
mΩ
V
V
V
ns
ns
ns
ns
ns
ns
MHz
pF
collector-emitter
saturation resistance
I
C
= 1 A; I
B
= 100 mA
base-emitter saturation I
C
= 1 A; I
B
= 50 mA
voltage
I
C
= 1 A; I
B
= 100 mA
base-emitter turn-on
voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance
V
CE
= 10 V; I
C
= 50 mA;
f = 100 MHz
V
CB
= 10 V; I
E
= i
e
= 0 A;
f = 1 MHz
V
CE
= 5 V; I
C
= 1 A
I
C
= 1 A; I
Bon
= 50 mA;
I
Boff
=
−50
mA
[1]
[1]
-
-
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
PBSS4220V_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 6 February 2006
5 of 13
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