HM514170C Series
HM51S4170C Series
262,144-word
×
16-bit Dynamic Random Access Memory
Rev. 1.0
Jul. 21, 1995
Description
The Hitachi HM51(S)4170C are CMOS dynamic RAM organized as 262,144-word
×
16-bit.
HM51(S)4170C have realized higher density, higher performance and various functions by employing 0.8
µm
CMOS process technology and some new CMOS circuit design technologies. The HM51(S)4170C
offer fast page mode as a high speed access mode. Multiplexed address input permits the
HM51(S)4170C to be packaged in standard 400-mil 40-pin plastic SOJ and standard 400-mil 44-pin
plastic TSOPII. Internal refresh timer enables HM51S4170C self refresh operation.
Features
•
•
•
Single 5 V (±10%)
High speed
— Access time: 70 ns/80 ns (max)
Low power dissipation
— Active mode: 660 mW/578 mW (max)
— Standby mode: 11 mW (max)
1.1 mW (max) (L-version)
Fast page mode capability
1024 refresh cycles: 16 ms
128 ms (L-version)
2
WE
-byte control
2 variations of refresh
—
RAS
-only refresh
—
CAS
-before-
RAS
refresh
Battery backup operation (L-version)
Self refresh operation (HM51S4170C)
•
•
•
•
•
•
HM514170C, HM51S4170C Series
Ordering Information
Type No.
HM514170CJ-7
HM514170CJ-8
HM514170CLJ-7
HM514170CLJ-8
HM51S4170CJ-7
HM51S4170CJ-8
HM51S4170CLJ-7
HM51S4170CLJ-8
HM514170CTT-7
HM514170CTT-8
HM514170CLTT-7
HM514170CLTT-8
HM51S4170CTT-7
HM51S4170CTT-8
HM51S4170CLTT-7
HM51S4170CLTT-8
Access Time
70 ns
80 ns
70 ns
80 ns
70 ns
80 ns
70 ns
80 ns
70 ns
80 ns
70 ns
80 ns
70 ns
80 ns
70 ns
80 ns
400-mil 44-pin plastic TSOPII (TTP-44/40DB)
Package
400-mil 40-pin plastic SOJ (CP-40DA)
2
HM514170C, HM51S4170C Series
Pin Arrangement
HM514170CJ/CLJ Series
HM51S4170CJ/CLJ Series
V
CC
I/O0
I/O1
I/O2
I/O3
V
CC
I/O4
I/O5
I/O6
I/O7
NC
LWE
UWE
RAS
A9
A0
A1
A2
A3
V
CC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
V
SS
I/O15
I/O14
I/O13
I/O12
V
SS
I/O11
I/O10
I/O9
I/O8
NC
NC
CAS
OE
A8
A7
A6
A5
A4
V
SS
HM514170CTT/CLTT Series
HM51S4170CTT/CLTT Series
V
CC
I/O0
I/O1
I/O2
I/O3
V
CC
I/O4
I/O5
I/O6
I/O7
1
2
3
4
5
6
7
8
9
10
44
43
42
41
40
39
38
37
36
35
V
SS
I/O15
I/O14
I/O13
I/O12
V
SS
I/O11
I/O10
I/O9
I/O8
(Top view)
NC
LWE
UWE
RAS
A9
A0
A1
A2
A3
V
CC
13
14
15
16
17
18
19
20
21
22
32
31
30
29
28
27
26
25
24
23
(Top view)
NC
NC
CAS
OE
A8
A7
A6
A5
A4
V
SS
Pin Description
Pin Name
A0
–
A9
Function
Address input
–
Row address
A0
–
A9
–
Column address A0
–
A7
–
Refresh address A0
–
A9
Data-in/data-out
Row address strobe
Column address strobe
Read/write enable
Output enable
Power (+5 V)
Ground
No connection
I/O0
–
I/O15
RAS
CAS
UWE
/
LWE
OE
V
CC
V
SS
NC
3
HM514170C, HM51S4170C Series
Block Diagram
I/O Bus & Column Decoder
I/O Bus & Column Decoder
I/O Bus & Column Decoder
I/O Bus & Column Decoder
256 k Memory Array Mat
256 k Memory Array Mat
256 k Memory Array Mat
256 k Memory Array Mat
256 k Memory Array Mat
256 k Memory Array Mat
256 k Memory Array Mat
Row
Decoder
Row
Row
Decoder
Decoder
Row
Decoder
Row
Decoder
Row
Row
Decoder
Decoder
Row
Decoder
Selector
Selector
Selector
Selector
I/O4
I/O4
Buffer
I/O5
Buffer
I/O6
Buffer
I/O7
Buffer
256 k Memory Array Mat
I/O11
Buffer
Peripheral Circuit
I/O3
I/O3
Buffer
I/O2
I/O2
Buffer
I/O1
I/O1
Buffer
I/O0
I/O0
Buffer
I/O15
I/O15
Buffer
I/O14
I/O14
Buffer
I/O13
I/O13
Buffer
I/O12
I/O12
Buffer
I/O11
I/O5
I/O10
I/O10
Buffer
I/O9
Buffer
I/O8
Buffer
I/O9
I/O6
I/O7
I/O8
LWE
UWE
RAS
Address A9
Peripheral Circuit
CAS
OE
A0,A1,A2,A3
Address A4,A5
A6,A7,A8
Selector
Row
Decoder
Selector
Row
Decoder
Selector
Row
Decoder
Selector
Row
Decoder
Row
Row
Decoder
Decoder
Row
Row
Decoder
Decoder
I/O Bus & Column Decoder
I/O Bus & Column Decoder
I/O Bus & Column Decoder
I/O Bus & Column Decoder
256 k Memory Array Mat
256 k Memory Array Mat
256 k Memory Array Mat
256 k Memory Array Mat
256 k Memory Array Mat
256 k Memory Array Mat
256 k Memory Array Mat
Operation Mode
The HM51(S)4170C series has the following 11 operation modes.
4
256 k Memory Array Mat
Peripheral Circuit
HM514170C, HM51S4170C Series
1.
2.
3.
4.
5.
6.
7.
8.
Read cycle
Early write cycle
Delayed write cycle
Read-modify-write cycle
RAS
-only refresh cycle
CAS
-before-
RAS
refresh cycle
Self refresh cycle (HM51S4170C)
Fast page mode read cycle
9. Fast page mode early write cycle
10. Fast page mode delayed write cycle
11. Fast page mode read-modify-write cycle
Inputs
RAS
H
H
L
L
L
L
L
H to L
L
L
L
L
CAS
H
L
L
L
L
L
H
L
H to L
H to L
H to L
H to L
UWE
D
H
H
L
*2
L
*2
H to L
D
D
H
L
*2
L
*2
H to L
LWE
D
H
H
L
*2
L
*2
H to L
D
D
H
L
*2
L
*2
H to L
Output
Open
Valid
Valid
Open
Undefined
Valid
Open
Open
Valid
Open
Undefined
Valid
Operation
Standby
Standby
Read cycle
Early write cycle
Delayed write cycle
Read-modify-write cycle
RAS-only
refresh cycle
CAS-before-RAS
refresh cycle
Self refresh cycle (HM51S4170C)
Fast page mode read cycle
Fast page mode early write cycle
Fast page mode delayed write cycle
Fast page mode read modify-write cycle
Notes: 1. H: High (inactive) L: Low (active) D: H or L
2. t
WCS
≥
0 ns Early write cycle
t
WCS
< 0 ns Delay write cycle
3. Mode is determined by the OR function of the
UWE
and
LWE.
(Mode is set by the earliest of
UWE
and
LWE
active edge and reset by the latest of
UWE
and
LWE
inactive edge.) However
write OPERATION and output HIZ control are done independently by each
UWE, LWE.
5
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