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BFP-405-E6433

Description
RF Bipolar Transistors NPN Silicon RF TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size554KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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BFP-405-E6433 Overview

RF Bipolar Transistors NPN Silicon RF TRANSISTOR

BFP-405-E6433 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerInfineon
Product CategoryRF Bipolar Transistors
RoHSDetails
Transistor TypeBipolar
TechnologySi
Transistor PolarityNPN
Collector- Emitter Voltage VCEO Max4.5 V
Emitter- Base Voltage VEBO1.5 V
Continuous Collector Current0.012 A
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle Dual Emitter
Mounting StyleSMD/SMT
Package / CaseSOT-343-4
PackagingCut Tape
PackagingReel
Collector- Base Voltage VCBO15 V
DC Current Gain hFE Max60 at 5 mA at 4 V
Height0.9 mm
Length2 mm
Operating Frequency25 GHz
TypeRF Bipolar Small Signal
Width1.25 mm
Gain Bandwidth Product fT25000 MHz
Maximum DC Collector Current0.025 A
Pd - Power Dissipation55 mW
Factory Pack Quantity10000
Unit Weight0.000226 oz
BFP405
Low Noise Silicon Bipolar RF Transistor
For low current applications
For oscillators up to 12 GHz
Minimum noise figure
NF
min
= 1.25 dB at 1.8 GHz
Outstanding
G
ms
= 23 dB at 1.8 GHz
Pb-free (RoHS compliant) and halogen-free package
with visible leads
Qualification report according to AEC-Q101 available
3
4
1
2
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Type
BFP405
Marking
ALs
1=B
Pin Configuration
2=E
3=C
4=E
-
-
Package
SOT343
Maximum Ratings
at
T
A
= 25 °C, unless otherwise specified
Parameter
Symbol
V
CEO
Value
Unit
Collector-emitter voltage
T
A
= 25 °C
T
A
= -55 °C
V
4.5
4.1
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
110 °C
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
J
T
A
T
Stg
15
15
1.5
25
3
75
150
-65 ... 150
-65 ... 150
mW
°C
mA
Junction temperature
Ambient temperature
Storage temperature
1
T
S
is
measured on the emitter lead at the soldering point to the pcb
1
2013-09-19

BFP-405-E6433 Related Products

BFP-405-E6433 BFP-405-E6740
Description RF Bipolar Transistors NPN Silicon RF TRANSISTOR RF Bipolar Transistors NPN Silicon RF Transistor
Product Attribute Attribute Value Attribute Value
Manufacturer Infineon Infineon
Product Category RF Bipolar Transistors RF Bipolar Transistors
RoHS Details Details
Transistor Type Bipolar Bipolar
Technology Si Si
Transistor Polarity NPN NPN
Emitter- Base Voltage VEBO 1.5 V 1.5 V
Continuous Collector Current 0.012 A 0.025 A
Minimum Operating Temperature - 65 C - 65 C
Maximum Operating Temperature + 150 C + 150 C
Configuration Single Dual Emitter Single Dual Emitter
Collector- Base Voltage VCBO 15 V 15 V
DC Current Gain hFE Max 60 at 5 mA at 4 V 60 at 5 mA at 4 V
Operating Frequency 25 GHz 25000 MHz (Typ)
Type RF Bipolar Small Signal RF Bipolar Small Signal
Pd - Power Dissipation 55 mW 75 mW
Factory Pack Quantity 10000 3000
Packaging Reel Reel
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