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PDTC144WEF

Description
100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size83KB,14 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
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PDTC144WEF Overview

100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR

PDTC144WEF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)0.1 A
Minimum DC current gain (hFE)60
JESD-609 codee3
Number of components1
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.25 W
surface mountYES
Terminal surfaceMatte Tin (Sn)
Transistor component materialsSILICON
DISCRETE SEMICONDUCTORS
DATA SHEET
PDTC144W series
NPN resistor-equipped transistors;
R1 = 47 kΩ, R2 = 22 kΩ
Product specification
Supersedes data of 2004 Mar 23
2004 Aug 17

PDTC144WEF Related Products

PDTC144WEF PDTC144W PDTC144WE PDTC144WT
Description 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Number of components 1 1 1 1
surface mount YES Yes YES YES
Is it Rohs certified? conform to - conform to conform to
Maker Philips Semiconductors (NXP Semiconductors N.V.) - Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknow - unknow unknow
Maximum collector current (IC) 0.1 A - 0.1 A 0.1 A
Minimum DC current gain (hFE) 60 - 60 56
JESD-609 code e3 - e3 e3
Polarity/channel type NPN - NPN NPN
Maximum power dissipation(Abs) 0.25 W - 0.15 W 0.25 W
Terminal surface Matte Tin (Sn) - Matte Tin (Sn) Matte Tin (Sn)
Transistor component materials SILICON SILICON SILICON -

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