HV7360/HV7361
High-Speed ±100V 2.5A Two-or-Three-Level Ultrasound Pulsers
Features
•
•
•
•
•
•
•
High-Density Integration AC-coupled Pulser
0V to ±100V Output Voltage
±2.5A Source and Sink Minimum Pulse Current
Up to 35 MHz Operating Frequency
2 ns Matched Delay Times
2.5V, 3.3V or 5V CMOS Logic Interface
Built-in Two-terminal Low-noise Interface for
HV7361
• Low Power Consumption and No Floating Power
Supply Rails or Decoupling Capacitors
General Description
The HV7360/HV7361 are high-voltage and high-speed
pulse generators with built-in, fast return-to-zero
damping Field-Effect Transistors (FETs). An added
feature to HV7361 is an integrated two-terminal
low-noise T/R switch. These integrated circuits are
designed not only for portable medical ultrasound
image devices but also for NDT and test equipment
applications.
Both the HV7360/HV7361 are composed of controller
logic interface circuits, level translators and
AC-coupled Metal Oxide Semiconductor Field-Effect
Transistor (MOSFET) gate drivers. They also have
high-voltage and high-current P-channel and
N-channel MOSFETs as output stages.
The peak output currents of each channel are
guaranteed to be over ±2.5A with up to ±100V of pulse
swing. The AC coupling topology for the gate drivers
not only saves two floating voltage supplies but also
makes the PCB layout easier.
Applications
•
•
•
•
Medical Ultrasound Imaging
Piezoelectric Transducer Drivers
Ultrasound Industrial NDT
Pulse Waveform Generator
Package Type
22-lead CABGA
(Top view)
See
Table 2-1
for pad information.
2017 Microchip Technology Inc.
DS20005570C-page 1
HV7360/HV7361
HV7360 Typical Application Circuit
+10V
+10V
VDD
+2.5/3.3V V
LL
PE
INA
INB
2.5/3.3V
Logic Input
INC
IND
VH
VL3
SP1
0 to +100V
DP1
DN1
0 to -100V
SN1
SP2
DP2
DN2
HV
OUT
GND
VSS
VL1
VL2
SN2
+/-100V 2.5A Three-level RTZ Transmit Pulsers
HV7361 Typical Application Circuit
+10V
+10V
0 to +100V
VDD
+2.5/3.3V V
LL
PE
INA
INB
2.5/3.3V
Logic Input
INC
IND
DP1
DN1
0 to -100V
SN1
SP2
DP2
DN2
VH
VL3
SP1
SN2
GND VSS VL1 VL2
RX
T/R SW
XDCR
to Rx LNA
+/-100V 2.5A Three-level RTZ Transmit Pulsers with T/R Switch
DS20005570C-page 2
2017 Microchip Technology Inc.
HV7360/HV7361
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
Chip Power Supply Voltage, V
DD
–V
SS
.................................................................................................... –0.5 to +12.5V
Output High Supply Voltage, V
H
......................................................................................................V
L
–0.5 to V
DD
+0.5V
Output Low Supply Voltage, V
L
..................................................................................................... V
SS
–0.5V to V
H
+0.5V
Low-side Supply Voltage, V
SS
..................................................................................................................... –6V to +0.5V
Differential High Voltage, V
SP1
–V
SN1
, V
SP2
–V
SN2
............................................................................................... +220V
Positive High Voltage, V
SP1,2
................................................................................................................. –0.5V to +110V
Negative High Voltage, V
SN1,2
............................................................................................................... +0.5V to –110V
All Logic Input Voltages.............................................................................................................V
SS
–0.5V to GND +5.5V
Rx to XDCR Differential Drop ............................................................................................................................... ±140V
Coupling Capacitor Breakdown Voltage................................................................................................................ ±110V
Maximum Junction Temperature, T
J
......................................................................................................................125°C
Operating Ambient Temperature, T
A
......................................................................................................–40°C to +85°C
† Notice:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only, and functional operation of the device at those or any other conditions above those
indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for
extended periods may affect device reliability.
OPERATING SUPPLY VOLTAGES AND CURRENT
Electrical Specifications:
GND = 0V, V
H
= V
DD
= +10V, V
L
= V
SS
= 0V, V
PE
= 3.3V, V
PP
= +100V, V
NN
= –100V,
T
A
= 25°C unless otherwise specified.
Parameter
Logic Supply Voltage Range
Supply Voltage
Low Side Supply Voltage
Gate Drive High-side Voltage
Gate Drive Low-side Voltage
Output Positive High Voltage
Output Negative High Voltage
V
DD
Quiescent Current
V
H
Quiescent Current
V
DD
Quiescent Current
V
H
Quiescent Current
V
DD
Average Current
V
H
Average Current
Input Logic Voltage High
Input Logic Voltage Low
Input Logic Current High
Input Logic Current Low
PE Input Logic Voltage High
PE Input Logic Voltage Low
PE Input Impedance to GND
Sym.
V
LL
V
DD
-V
SS
V
SS
V
H
V
L
V
SP1,2
V
SN1,2
I
DDQ
I
HQ
I
DDQ
I
HQ
I
DD
I
H
V
IH
V
IL
I
IH
I
IL
V
PEH
V
PEL
R
INPE
Min.
2.25
4.75
–5.5
V
SS
+4
V
SS
0
–100
—
—
—
—
—
—
V
PE
–0.3
0
—
—
1.7
0
100
Typ.
—
—
—
—
—
—
—
50
2
1
2
4
10
—
—
—
—
3.3
—
—
Max.
3.63
11.5
0
V
DD
V
DD
–4
100
0
—
—
—
—
—
—
V
PE
0.3
1
1
5.25
0.3
—
Unit
V
V
V
V
V
V
V
μA
μA
mA
μA
mA
mA
V
V
μA
μA
V
V
kΩ
For logic input PE
For logic inputs INA, INB, INC
and IND
No input transitions, PE = 0
No input transitions, PE = 1
One channel on at 5 MHz, no
load
V
H
–V
L
≥
4V
4V
≤
V
DD
≤
11.5V
Conditions
2017 Microchip Technology Inc.
DS20005570C-page 3
HV7360/HV7361
AC ELECTRICAL CHARACTERISTICS
Electrical Specifications:
GND = 0V, V
H
= V
DD
= +10V, V
L
= V
SS
= 0V, V
PE
= 3.3V, V
PP
= +100V, V
NN
= –100V,
T
A
= 25°C unless otherwise specified.
Parameter
Input or PE Rise and Fall Time
Input to Output Delay
Output Rise and Fall Time
Rise and Fall Time Matching
Propagation Matching
Propagation Delay Matching
PE On-time
PE Off-time
Output to MOSFET Gate Cap
V
H
to V
L3
Decoupling Cap
Sym.
t
irf
t
d1–4
t
r/f1–2
∆t
rf
∆t
dC2C
∆t
dD2D
t
PE–ON
t
PE–OFF
C
OG
C
VH
Min.
—
—
—
—
—
—
—
—
—
—
Typ.
—
7.5
9.5
2
1
±2
—
—
10
0.22
Max.
10
—
—
—
—
—
5
4
—
—
Unit
ns
ns
ns
ns
ns
µs
nF
µF
Conditions
Logic input edge speed requirement
R
LOAD
= 1Ω
C
LOAD
= 330 pF, R
LOAD
= 2.5 kΩ
Channel to channel
Device to device delay match
V
PE
= 1.7 ~ 5.25V,
V
DD
= 7.5 ~ 11.5V,
–20 ~ 85°C
100V X7S
16V X7R
ELECTRICAL CHARACTERISTICS
Electrical Specifications:
GND = 0V, V
H
= V
DD
= +10V, V
L
= V
SS
= 0V, V
PE
= 3.3V, V
PP
= +100V, V
NN
= –100V,
T
A
= 25°C unless otherwise specified.
Parameter
DC PARAMETER
Drain-to-source Breakdown Voltage
Gate Threshold Voltage
Change in V
GS(th)
with Temperature
Gate-to-source Shunt Resistor
Gate-to-source Zener Voltage
Zero-gate Voltage Drain Current
Sym.
Min.
Typ.
Max.
Unit
Conditions
PULSER AND DAMPING P-CHANNEL MOSFET
BV
DSS
V
GS(th)
∆V
GS(th)
R
GS
V
ZGS
I
DSS
—
ON-state Drain Current
Static Drain-to-source ON-state
Resistance
I
D(ON)
R
DS(ON)
–1.2
–2.3
—
—
—
—
—
–2.5
—
—
—
–1
—
—
8.5
7
1
mA
A
Ω
–200
–1
—
10
13.2
—
—
—
—
—
—
—
—
–2.4
4.5
50
25
–10
V
V
mV/°C
kΩ
V
μA
V
GS
= 0V, I
D
= –2 mA
V
GS
= V
DS
, I
D
= –1 mA
V
GS
= V
DS
, I
D
= –1 mA
I
GS
= 100 µA, if applied
I
GS
= –2 mA, if applied
V
DS
= Maximum rating,
V
GS
= 0V
V
DS
= 0.8 maximum rating,
V
GS
= 0V, T
A
= 125°C
V
GS
= –5V, V
DS
= –25V
V
GS
= –10V, V
DS
= –50V
V
GS
= –5V, I
D
= –150 mA
V
GS
= –10V, I
D
= –1A
V
GS
= –10V, I
D
= –1 mA
V
DS
= –25V, I
D
= –500 mA
V
GS
= 0V,
V
DS
= –25V,
f = 1 MHz
V
GS
= 0V, I
SD
= 500 mA
∆R
DS(ON)
%/°C
Change in R
DS(ON)
with Temperature
AC PARAMETER
400
—
—
mmho
Forward Transconductance
G
FS
—
75
—
Input Capacitance
C
ISS
Common Source Output Capacitance
C
OSS
—
21
—
pF
—
6.5
—
Reverse Transfer Capacitance
C
RSS
DIODE PARAMETER
—
—
1.8
V
Diode Forward Voltage Drop
V
SBD
—
300
—
ns
Reverse Recovery Time of Body Diode
t
rrBD
PULSER AND DAMPING N-CHANNEL MOSFET
DC PARAMETER
200
—
—
V
Drain-to-source Breakdown Voltage
BV
DSS
Gate Threshold Voltage
V
GS(th)
1
—
2.4
V
V
GS
= 0V, I
D
= 2 mA
V
GS
= V
DS
, I
D
= 1 mA
DS20005570C-page 4
2017 Microchip Technology Inc.
HV7360/HV7361
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Specifications:
GND = 0V, V
H
= V
DD
= +10V, V
L
= V
SS
= 0V, V
PE
= 3.3V, V
PP
= +100V, V
NN
= –100V,
T
A
= 25°C unless otherwise specified.
Parameter
Change in V
GS(th)
with Temperature
Gate-to-source Shunt Resistor
Gate-to-source Zener Voltage
Zero Gate Voltage Drain Current
Sym.
∆V
GS(th)
R
GS
V
ZGS
I
DSS
—
ON-state Drain Current
Static Drain-to-source ON-state
Resistance
Change in R
DS(ON)
with Temperature
AC PARAMETER
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
DIODE PARAMETER
Diode Forward Voltage Drop
Reverse Recovery Time of Body Diode
I
D(ON)
R
DS(ON)
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
V
SBD
t
rrBD
1.3
2.3
—
—
—
400
—
—
—
—
—
—
—
2.5
—
—
—
—
56
13
2
—
300
1
—
—
6.5
6
1
—
—
—
—
1.8
—
Min.
—
10
13.2
—
Typ.
—
—
—
—
Max.
–4.5
50
25
10
Unit
Conditions
mV/°C V
GS
= V
DS
, I
D
= 1 mA
kΩ
I
GS
= 100 µA
V
I
GS
= 2 mA
V
DS
= Maximum rating,
μA
V
GS
= 0V
V
DS
= 0.8 maximum rating,
mA
V
GS
= 0V, T
A
= 125°C
V
GS
= 5V, V
DS
= 25V
A
V
GS
= 10V, V
DS
= 50V
V
GS
= 5V, I
D
= 150 mA
Ω
V
GS
= 10V, I
D
= 1A
%/°C V
GS
= 10V, I
D
= 1A
mmho V
DS
= 25V, I
D
= 500 mA
pF
V
GS
= 0V,
V
DS
= 25V,
f = 1 MHz
V
GS
= 0V, I
SD
= 500 mA
V
ns
HV7361 T/R SWITCH CHARACTERISTICS
Parameter
Breakdown Voltage from XDCR to Rx
Switch-on Resistance from XDCR to Rx
V
A–B
Trip Point to Turn Off
Switch Turn-off Voltage
Switch-off Current
Peak Switching Current
Turn-off Time
Turn-on Time
Switch-on Capacitance from A to B or
B to A
Switch-off Capacitance from A to B or
B to A
Small Signal Bandwidth
Sym.
B
VA–B
R
SW
V
TRIP
V
OFF
I
A–B(OFF)
I
PEAK
T
OFF
T
ON
C
SW(ON)
C
SW(OFF)
BW
Min.
±130
—
—
—
—
—
—
—
—
—
—
Typ.
—
15
±1
±2
±200
±60
—
—
21
15
100
Max.
—
—
±2
—
±300
—
20
20
—
—
—
Unit
V
Ω
V
V
µA
mA
ns
ns
pF
pF
MHz
SW = On
V
SW
= 25V
R
LOAD
= 50Ω
I
A–B
= ±1 mA
V
A–B
= ±130V
Conditions
I
A–B
= ±1 mA
I
A–B
= ±5 mA
2017 Microchip Technology Inc.
DS20005570C-page 5
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