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85EPS08

Description
85 A, 800 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size121KB,6 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

85EPS08 Overview

85 A, 800 V, SILICON, RECTIFIER DIODE

85EPS08 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionR-PSFM-D1
Contacts1
Reach Compliance Codeunknow
ECCN codeEAR99
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.15 V
JESD-30 codeR-PSFM-D1
JESD-609 codee0
Maximum non-repetitive peak forward current1500 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature150 °C
Maximum output current85 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage800 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formSOLDER LUG
Terminal locationSINGLE
Base Number Matches1
Bulletin I2139 rev. C 10/02
SAFE
IR
Series
85EPS..
INPUT RECTIFIER DIODE
I
F(RMS)
= 160A
V
F
I
FSM
< 1.15V @ 85A
= 1400A
V
RRM
800 and 1200V
Major Ratings and Characteristics
Characteristics
I
F(AV)
Sine waveform
@ T
C
= 95° C
I
F(RMS)
V
RRM
range
I
FSM
V
F
T
J
@ 85A, T
J
= 25°C
range
(*)
Description/ Features
Units
A
A
V
A
V
°C
The 85EPS.. rectifier
SAFE
IR
series has been
optimized for very low forward voltage drop, with
moderate leakage.
The glass passivation technology used has reliable
operation up to 150° C junction temperature.
Available in the new
Pow
IR
tab
TM
package, this new
series is suitable for a large range of applications
combining excellent die to footprint ratio and sturdeness
connectivity for use in high current environments.
85EPS..
85
160
800 and 1200
1400
1.15
- 40 to 150
Case Styles
85EPS..
85EPS..J
(*)
for higher voltage up to 1600V contact factory
www.irf.com
1

85EPS08 Related Products

85EPS08 85EPS 85EPS12 85EPS08J 85EPS12J
Description 85 A, 800 V, SILICON, RECTIFIER DIODE 85 A, 1200 V, SILICON, RECTIFIER DIODE 85 A, 1200 V, SILICON, RECTIFIER DIODE 85 A, 800 V, SILICON, RECTIFIER DIODE 85 A, 1200 V, SILICON, RECTIFIER DIODE
Is it Rohs certified? incompatible - incompatible incompatible incompatible
Maker International Rectifier ( Infineon ) - International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon )
package instruction R-PSFM-D1 - R-PSFM-D1 R-PSFM-X1 R-PSFM-X1
Contacts 1 - 1 1 1
Reach Compliance Code unknow - unknow unknow compli
ECCN code EAR99 - EAR99 EAR99 EAR99
application GENERAL PURPOSE - GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Shell connection CATHODE - CATHODE CATHODE CATHODE
Configuration SINGLE - SINGLE SINGLE SINGLE
Diode component materials SILICON - SILICON SILICON SILICON
Diode type RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.15 V - 1.15 V 1.15 V 1.15 V
JESD-30 code R-PSFM-D1 - R-PSFM-D1 R-PSFM-X1 R-PSFM-X1
JESD-609 code e0 - e0 e0 e0
Maximum non-repetitive peak forward current 1500 A - 1500 A 1500 A 1500 A
Number of components 1 - 1 1 1
Phase 1 - 1 1 1
Number of terminals 1 - 1 1 1
Maximum operating temperature 150 °C - 150 °C 150 °C 150 °C
Maximum output current 85 A - 85 A 85 A 85 A
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 800 V - 1200 V 800 V 1200 V
surface mount NO - NO NO NO
Terminal surface Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form SOLDER LUG - SOLDER LUG UNSPECIFIED UNSPECIFIED
Terminal location SINGLE - SINGLE SINGLE SINGLE
Base Number Matches 1 - 1 1 1
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