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AOTF5N50FD

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size268KB,6 Pages
ManufacturerAlpha & Omega Semiconductor
Websitehttp://www.aosmd.com/about
Environmental Compliance
Download Datasheet Parametric View All

AOTF5N50FD Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

AOTF5N50FD Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerAlpha & Omega Semiconductor
package instruction,
Reach Compliance Codecompliant
ConfigurationSingle
Maximum drain current (Abs) (ID)5 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)35 W
surface mountNO
Base Number Matches1
AOTF5N50FD
500V, 5A N-Channel MOSFET with Fast Recovery Diode
General Description
The AOTF5N50FD has been fabricated using an
advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in
popular AC-DC applications. By providing low R
DS(on)
, C
iss
and C
rss
along with guaranteed avalanche capability this
part can be adopted quickly into new and existing offline
power supply designs.
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
600V@150℃
5A
<1.8Ω
100% UIS Tested
100% R
g
Tested
For Halogen Free add "L" suffix to part number:
AOTF5N50FDL
Top View
TO-220F
D
G
G
D
S
S
AOTF5N50FD
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
G
C
AOTF5N50FD
500
±30
5*
3*
13
2.3
79
158
5
35
0.3
-55 to 150
300
AOTF5N50FD
65
3.6
Units
V
V
A
A
mJ
mJ
V/ns
W
W/
o
C
°C
°C
Units
°C/W
°C/W
V
GS
T
C
=25°C
T
C
=100°C
I
D
I
DM
I
AR
E
AR
Repetitive avalanche energy
Single pulsed avalanche energy
E
AS
Peak diode recovery dv/dt
dv/dt
T
C
=25°C
P
D
B
Power Dissipation
Derate above 25
o
C
Junction and Storage Temperature Range
T
J
, T
STG
Maximum lead temperature for soldering
T
L
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Symbol
Maximum Junction-to-Ambient
A,D
R
θJA
Maximum Junction-to-Case
R
θJC
* Drain current limited by maximum junction temperature.
Rev.1.0: July 2013
www.aosmd.com
Page 1 of 6
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