MICROWAVE POWER GaAs FET
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | Toshiba Semiconductor |
| package instruction | HERMETIC SEALED, 2-9D1B, 2 PIN |
| Contacts | 2 |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Factory Lead Time | 20 weeks |
| Shell connection | SOURCE |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 15 V |
| Maximum drain current (Abs) (ID) | 2.6 A |
| Maximum drain current (ID) | 2.6 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| highest frequency band | X BAND |
| JESD-30 code | R-CDFM-F2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | DEPLETION MODE |
| Maximum operating temperature | 175 °C |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum power consumption environment | 15 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | FLAT |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | AMPLIFIER |
| Transistor component materials | GALLIUM ARSENIDE |
| Base Number Matches | 1 |
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