TYN 0510 --->
TYN 1010
SCR
.
.
.
FEATURES
HIGH SURGE CAPABILITY
HIGH ON-STATE CURRENT
HIGH STABILITY AND RELIABILITY
DESCRIPTION
The TYN 0510 ---> TYN 1010 Family of Silicon Con-
trolled Rectifiers uses a high performance glass passi-
vated technology.
This general purpose Family of Silicon Controlled
Rectifiers is designed for power supplies up to
400Hz on resistive or inductive load.
ABSOLUTE RATINGS
(limiting values)
Symbol
IT(RMS)
IT(AV)
ITSM
RMS on-state current
(180° conduction angle)
Average on-state current
(180° conduction angle, single phase circuit)
Non repetitive surge peak on-state current
( Tj initial = 25°C )
I2 t value
Critical rate of rise of on-state current
Gate supply : IG = 100 mA diG/dt = 1 A/µs
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
Parameter
0510
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125
°C
50
110
100
210
200
TYN
410
400
610
600
810
800
1010
1000
V
Parameter
Tc = 100
°C
Tc = 100
°C
tp = 8.3 ms
tp = 10 ms
I2t
dI/dt
Tstg
Tj
Tl
tp = 10 ms
Value
10
6.4
105
100
50
50
- 40 to + 150
- 40 to + 125
260
A2s
A/µs
°C
°C
°C
Unit
A
A
A
K
A
G
TO220AB
(Plastic)
Symbol
Unit
March 1995
1/4
TYN 0510 ---> TYN 1010
THERMAL RESISTANCES
Symbol
Rth (j-a)
Junction to ambient
Parameter
Value
60
2.5
Unit
°C/W
°C/W
Rth (j-c) DC Junction to case for DC
GATE CHARACTERISTICS
(maximum values)
PG (AV) = 1W
PGM = 10W (tp = 20
µs)
IFGM = 4A (tp = 20
µs)
VRGM = 5 V.
ELECTRICAL CHARACTERISTICS
Symbol
IGT
VGT
VGD
tgt
IL
IH
VTM
IDRM
IRRM
dV/dt
tq
VD=12V
VD=12V
Test Conditions
(DC) RL=33Ω
(DC) RL=33Ω
Tj=25°C
Tj=25°C
Tj= 110°C
Tj=25°C
Tj=25°C
gate open
Tj=25°C
Tj=25°C
Tj=25°C
Tj= 110°C
Tj= 110°C
Tj= 110°C
MIN
TYP
MAX
MAX
MIN
TYP
TYP
MAX
MAX
MAX
Value
15
1.5
0.2
2
50
30
1.6
0.01
2
200
70
V/µs
µs
Unit
mA
V
V
µs
mA
mA
V
mA
VD=VDRM RL=3.3kΩ
VD=VDRM IG = 40mA
dIG/dt = 0.5A/µs
IG= 1.2 IGT
IT= 100mA
ITM= 20A tp= 380µs
VDRM
VRRM
Rated
Rated
Linear slope up to VD=67%VDRM
gate open
VD=67%VDRM ITM = 20A VR= 25V
dITM/dt=30 A/µs
dVD/dt= 50V/µs
2/4
TYN 0510 ---> TYN 1010
Fig.1 :
Maximum average power dissipation versus
average on-state current.
Fig.2 :
Correlation between maximum average power
dissipation and maximum allowable temperatures (Tamb
and T case) for different thermal resistances heatsink +
contact.
P (W)
360
O
P (W)
Tcase (
o
C)
Rth = 0
o
C/W
2
o
C/W
4
o
C/W
6
o
C/W
12
10
8
6
= 120
o
12
10
DC
o
-100
-105
-110
8
6
= 180
o
= 180
4
2
= 30
o
= 90
= 60
o
o
4
2
I T(AV)(A)
Tamb ( C)
o
-115
-120
20
40
60
80
100
120
-125
140
0
0
1
2
3
4
5
6
7
8
9
0
0
Fig.3 :
Average
temperature.
I T(AV) (A)
on-state
current
versus
case
Fig.4 :
Relative variation of thermal impedance versus
pulse duration.
Zth/Rth
1
DC
Zt h( j-c)
12
10
8
6
4
2
Tcase ( C)
o
= 180
o
0.1
Zt h( j-a)
tp (s)
0
0
10 20 30 40 50 60 70 80 90 100 110 120 130
0.01
1E-3
1E-2
1E-1
1E +0
1 E +1
1E +2 5 E+2
Fig.5 :
Relative variation of gate trigger current versus
junction temperature.
Fig.6 :
Non repetitive surge peak on-state current
versus number of cycles.
3/4
TYN 0510 ---> TYN 1010
Fig.7 :
Non repetitive surge peak on-state current for a
sinusoidal pulse with width : t
≤
10 ms, and
corresponding value of I2t.
Fig.8 :
On-state characteristics (maximum values).
PACKAGE MECHANICAL DATA
TO220AB Plastic
REF.
A
H
G
I
J
D
B
F
P
O
L
C
M
=N=
A
B
C
D
F
G
H
I
J
L
M
N
O
P
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
10.00 10.40 0.393 0.409
15.20 15.90 0.598 0.625
13.00 14.00 0.511 0.551
6.20
6.60 0.244 0.259
3.50
4.20 0.137 0.165
2.65
2.95 0.104 0.116
4.40
4.60 0.173 0.181
3.75
3.85 0.147 0.151
1.23
1.32 0.048 0.051
0.49
0.70 0.019 0.027
2.40
2.72 0.094 0.107
4.80
5.40 0.188 0.212
1.14
1.70 0.044 0.066
0.61
0.88 0.024 0.034
Cooling method : C
Marking : type number
Weight : 2.3 g
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
©
1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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