Power Field-Effect Transistor, 14A I(D), 450V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | ADPOW |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | unknown |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 450 V |
| Maximum drain current (Abs) (ID) | 14 A |
| Maximum drain current (ID) | 14 A |
| Maximum drain-source on-resistance | 0.5 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 200 pF |
| JEDEC-95 code | TO-247AD |
| JESD-30 code | R-PSFM-T3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum power consumption environment | 240 W |
| Maximum power dissipation(Abs) | 240 W |
| Maximum pulsed drain current (IDM) | 56 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Transistor component materials | SILICON |
| Maximum off time (toff) | 131 ns |
| Maximum opening time (tons) | 66 ns |
| Base Number Matches | 1 |
| APT4550BN | APT5040BN | APT5050BN | APT4540BN | |
|---|---|---|---|---|
| Description | Power Field-Effect Transistor, 14A I(D), 450V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | Power Field-Effect Transistor, 16A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | Power Field-Effect Transistor, 14A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | Power Field-Effect Transistor, 16A I(D), 450V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible |
| Maker | ADPOW | ADPOW | ADPOW | ADPOW |
| package instruction | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| Shell connection | DRAIN | DRAIN | DRAIN | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 450 V | 500 V | 500 V | 450 V |
| Maximum drain current (Abs) (ID) | 14 A | 16 A | 14 A | 16 A |
| Maximum drain current (ID) | 14 A | 16 A | 14 A | 16 A |
| Maximum drain-source on-resistance | 0.5 Ω | 0.4 Ω | 0.5 Ω | 0.4 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 200 pF | 200 pF | 200 pF | 200 pF |
| JEDEC-95 code | TO-247AD | TO-247AD | TO-247AD | TO-247AD |
| JESD-30 code | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
| JESD-609 code | e0 | e0 | e0 | e0 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum power consumption environment | 240 W | 240 W | 240 W | 240 W |
| Maximum power dissipation(Abs) | 240 W | 240 W | 240 W | 240 W |
| Maximum pulsed drain current (IDM) | 56 A | 64 A | 56 A | 64 A |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
| Maximum off time (toff) | 131 ns | 131 ns | 131 ns | 131 ns |
| Maximum opening time (tons) | 66 ns | 66 ns | 66 ns | 66 ns |
| Base Number Matches | 1 | 1 | 1 | 1 |
| Is Samacsys | - | N | N | N |
京公网安备 11010802033920号
EEWORLD
