DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2499, 2SK2499-Z
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2499 is N-Channel MOS Field Effect Transistor de-
signed for high current switching applications.
3.0 ± 0.3
PACKAGE DIMENSIONS
(in millimeters)
10.6 MAX.
3.6 ± 0.2
10.0
5.9 MIN.
12.7 MIN. 15.5 MAX.
4.8 MAX.
1.3 ± 0.2
FEATURES
•
Low On-Resistance
R
DS(on)1
= 9 mΩ (V
GS
= 10 V, I
D
= 25 A)
R
DS(on)2
= 14 mΩ (V
GS
= 4 V, I
D
= 25 A)
4
1 2 3
•
Low C
iss
C
iss
= 3 400 pF TYP
.
•
High Avalanche Capability.
•
Built-in G-S Protection Diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)*
Total Power Dissipation (T
c
= 25 ˚C)
Total Power Dissipation (T
A
= 25 ˚C)
Channel Temperature
Storage Temperature
Single Avalanche Current**
Single Avalanche Energy**
*
PW
≤
10
µ
s, Duty Cycle
≤
1 %
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
60
±20
±50
±200
75
1.5
150
50
250
V
V
A
A
W
W
6.0 MAX.
1.3 ± 0.2
0.75 ± 0.1
2.54
0.5 ± 0.2
2.8 ± 0.2
2.54
1. Gate
2. Drain
3. Source
4. Fin (Drain)
JEDEC: TO-220AB
MP-25 (TO-220)
(10.0)
4
1.0 ± 0.5
8.5 ± 0.2
1.5 MAX.
4.8 MAX.
1.3 ± 0.2
˚C
A
mJ
–55 to +150 ˚C
1.4 ± 0.2
1.0 ± 0.3
(2.54) (2.54)
1 2 3
1.1 ± 0.4
3.0 ± 0.5
R) )
.5 8R
(0 0.
(
0.5 ± 0.2
**
Starting T
ch
= 25 ˚C, R
G
= 25
Ω,
V
GS
= 20 V
→
0
MP-25Z (SURFACE MOUNT TYPE)
Drain
2.8 ± 0.2
1.
2.
3.
4.
Gate
Drain
Source
Fin (Drain)
Body
Diode
Gate
Gate Protection Diode
Source
Document No. D10045EJ1V0DS00 (1st edition)
Date Published May 1995 P
Printed in Japan
©
1995
2SK2499, 2SK2499-Z
ELECTRICAL CHARACTERISTICS (T
A
= 25 ˚C)
CHARACTERISTIC
Drain to Source On-State Resistance
SYMBOL
R
DS(on)1
R
DS(on)2
Gate to Source Cutoff Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS(off)
| y
fs
|
I
DSS
I
GSS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
3 400
1 600
770
55
360
480
360
152
11
60
0.92
105
265
1.0
20
MIN.
TYP.
7.3
11
1.5
58
10
±10
MAX.
9.0
14
2.0
UNIT
mΩ
mΩ
V
S
TEST CONDITIONS
V
GS
= 10 V, I
D
= 25 A
V
GS
= 4 V, I
D
= 25 A
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 25 A
V
DS
= 60 V, V
GS
= 0
V
GS
=
±20
V, V
DS
= 0
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
I
D
= 25 A
V
GS(on)
= 10 V
V
DD
= 30 V
R
G
= 10
Ω
I
D
= 50 A
V
DD
= 48 V
V
GS
= 10 V
I
F
= 50 A, V
GS
= 0
I
F
= 50 A, V
GS
= 0
di/dt = 100 A/
µ
s
µ
A
µ
A
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Test Circuit 1 Avalanche Capability
D.U.T.
R
G
= 25
Ω
PG
V
GS
= 20
→
0 V
50
Ω
Test Circuit 2 Switching Time
D.U.T.
L
V
DD
PG.
R
G
R
G
= 10
Ω
R
L
V
GS
Wave Form
V
GS
0
10 %
V
GS (on)
90 %
V
DD
I
D
90 %
90 %
I
D
D
Wave Form
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
t
t = 1
µ
s
Duty Cycle
≤
1 %
I
0
10 %
t
d (on)
t
on
t
r
t
d (off)
t
off
10 %
t
f
Starting T
ch
Test Circuit 3 Gate Charge
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
2SK2499, 2SK2499-Z
TYPICAL CHARACTERISTICS (T
A
= 25 ˚C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
140
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
100
80
60
40
20
120
100
80
60
40
20
0
20
40
60
80
100 120 140 160
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
0
20
40
60
80
100 120 140 160
T
C
- Case Temperature - ˚C
T
C
- Case Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
=1
FORWARD BIAS SAFE OPERATING AREA
1000
I
D(pulse)
I
D
- Drain Current - A
d
ite V)
im 10
L
n)
(o S
=
DS
V
G
R t
(a
PW
200
0
100
10
I
D
- Drain Current - A
s
V
GS
= 20 V
160
V
GS
= 10 V
120
V
GS
= 4V
80
40
µ
0
1
Po
w
s
µ
m
s
I
D(DC)
10
er
Di
ss
DC
m
s
10
ipa
tio
n
1
0.1
T
C
= 25 ˚C
Single Pulse
1
Lim
ite
d
10
100
0
1
2
3
4
V
DS -
Drain to Source Voltage - V
V
DS
- Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
1000
Pulsed
I
D
- Drain Current - A
100
10
T
a
=–25 ˚C
25 ˚C
125 ˚C
1
V
DS
=10V
0
2
4
6
8
V
GS-
Gate to Source Voltage - V
3
2SK2499, 2SK2499-Z
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1 000
r
th(t)
- Transient Thermal Resistance - ˚C/W
R
th(ch-a)
= 83.3 ˚C/W
100
10
1
R
th(ch-c)
= 1.67 ˚C/W
0.1
0.01
Single Pulse
0.001
10
µ
100
µ
1m
10 m
100 m
1
10
100
1 000
PW - Pulse Width - s
R
DS(on)
- Drain to Source On-State Resistance - mΩ
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| y
fs
| - Forward Transfer Admittance - S
1000
V
DS
=10V
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
Pulsed
100
20
10
10
I
D
=25A
1
1
10
100
1000
0
10
20
30
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-State Resistance - mΩ
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
V
GS
- Gate to Source Voltage - V
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
GS(off)
- Gate to Source Cutoff Voltage - V
30
Pulsed
2.0
V
DS
= 10 V
I
D
= 1 mA
20
1.5
V
GS
=4V
10
V
GS
=10V
0
10
100
I
D
- Drain Current - A
1000
1.0
0.5
0
–50
0
50
100
150
T
ch
- Channel Temperature - ˚C
4
2SK2499, 2SK2499-Z
R
DS(on)
- Drain to Source On-State Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
I
SD
- Diode Forward Current - A
20
100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
15
V
GS
=4V
10
4V
1
V
GS
= 0
10
V
GS
=10V
5
I
D
= 25A
- 50
0
50
100
150
0.1
0
0.5
1.0
1.5
0
T
ch
- Channel Temperature - ˚C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
SD
- Source to Drain Voltage - V
SWITCHING CHARACTERISTICS
1 000
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
t
d(off)
100 000
C
iss
, C
oss
, C
rss
- Capacitance - pF
V
GS
= 0
f = 1 MHz
t
f
100
t
r
t
d(on)
10 000
C
iss
1 000
C
rss
C
oss
10
100
0.1
1
10
100
1.0
0.1
V
DD
=30V
V
GS
=10V
R
G
=10Ω
1.0
10
100
I
D
- Drain Current - A
V
DS
- Drain to Source Voltage - V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1000
t
rr
- Reverse Recovery time - ns
di/dt =100A/
µ
s
V
GS
= 0
V
DS
- Drain to Source Voltage - V
60
V
DS
40
V
GS
12
10
8
6
100
10
20
4
2
1.0
0.1
1.0
10
100
0
50
100
150
0
200
I
D
- Drain Current - A
Q
g
- Gate Charge - nC
5
V
GS
- Gate to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
16
80
V
DD
=48V
I
D
= 50A
14
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