DCR1910V85
Phase Control Thyristor
Preliminary Information
DS5878-1.1 NOV 2006 (LN24964)
FEATURES
•
•
Double Side Cooling
High Surge Capability
KEY PARAMETERS
V
DRM
I
T(AV)
I
TSM
dV/dt*
dI/dt
8500V
1910A
25000A
1500V/µs
300A/µs
APPLICATIONS
•
•
•
High Power Drives
High Voltage Power Supplies
Static Switches
*
Higher dV/dt selections available
VOLTAGE RATINGS
Part and
Ordering
Number
Repetitive Peak
Voltages
V
DRM
and V
RRM
V
8500
8000
7500
7000
Conditions
DCR1910V85
DCR1910V80
DCR1910V75
DCR1910V70
T
vj
= -40° to 125°
C
C,
I
DRM
= I
RRM
= 300mA,
V
DRM
, V
RRM
t
p
= 10ms,
V
DSM
& V
RSM
=
V
DRM
& V
RRM
+ 100V
respectively
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select the required part number
shown in the Voltage Ratings selection table.
For example:
DCR1910V85
Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.
Outline type code: V
(See Package Details for further information)
Fig. 1 Package outline
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DCR1910V85
SEMICONDUCTOR
CURRENT RATINGS
T
case
= 60° unless stated otherwise
C
Symbol
Double Side Cooled
I
T(AV)
I
T(RMS)
I
T
Parameter
Test Conditions
Max.
Units
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
1910
3000
2975
A
A
A
SURGE RATINGS
Symbol
I
TSM
It
2
Parameter
Surge (non-repetitive) on-state current
I t for fusing
2
Test Conditions
10ms half sine, T
case
= 125°
C
V
R
= 0
Max.
25.0
3.125
Units
kA
MA s
2
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
Parameter
Thermal resistance – junction to case
Test Conditions
Double side cooled
Single side cooled
DC
Anode DC
Cathode DC
R
th(c-h)
Thermal resistance – case to heatsink
Clamping force 54.0kN
(with mounting compound)
T
vj
Virtual junction temperature
On-state (conducting)
Reverse (blocking)
T
stg
F
m
Storage temperature range
Clamping force
Double side
Single side
Min.
-
-
-
-
-
-
-
-55
48
Max.
0.00746
0.0130
0.0178
0.002
0.004
135
125
125
59
Units
°
C/W
°
C/W
°
C/W
°
C/W
°
C/W
°
C
°
C
°
C
kN
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DCR1910V85
SEMICONDUCTOR
DYNAMIC CHARACTERISTICS
Symbol
I
RRM
/I
DRM
dV/dt
dI/dt
Parameter
Peak reverse and off-state current
Max. linear rate of rise of off-state voltage
Rate of rise of on-state current
Test Conditions
At V
RRM
/V
DRM
, T
case
= 125°
C
To 67% V
DRM
, T
j
= 125° gate open
C,
From 67% V
DRM
to 2x I
T(AV)
Gate source 30V, 10Ω,
t
r
< 0.5µs, T
j
= 125°
C
Repetitive 50Hz
Non-repetitive
Min.
-
-
-
-
Max.
300
1500
150
300
Units
mA
V/µs
A/µs
A/µs
V
T(TO)
Threshold voltage – Low level
Threshold voltage – High level
100A to1000A at T
case
= 125°
C
1000A to 7200A at T
case
= 125°
C
100A to 1000A at T
case
= 125°
C
1000A to 7200A at T
case
= 125°
C
V
D
= 67% V
DRM
, gate source 30V, 10Ω
t
r
= 0.5µs, T
j
= 25°
C
-
-
-
-
TBD
0.9
1.3
0.888
0.55
TBD
V
V
mΩ
mΩ
µs
r
T
On-state slope resistance – Low level
On-state slope resistance – High level
t
gd
Delay time
t
q
Turn-off time
T
j
= 125° V
R
= 200V, dI/dt = 1A/µs,
C,
dV
DR
/dt = 20V/µs linear
-
1200
µs
Q
S
I
L
I
H
Stored charge
Latching current
Holding current
I
T
= 2000A, T
j
= 125° dI/dt – 1A/µs,
C,
T
j
= 25° V
D
= 5V
C,
T
j
= 25° R
G-K
=
∞,
I
TM
= 500A, I
T
= 5A
C,
4800
TBD
TBD
8000
TBD
TBD
µC
mA
mA
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DCR1910V85
SEMICONDUCTOR
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
V
GT
V
GD
I
GT
I
GD
Parameter
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Gate non-trigger current
Test Conditions
V
DRM
= 5V, T
case
= 25°
C
At V
DRM,
T
case
= 125°
C
V
DRM
= 5V, T
case
= 25°
C
V
DRM
= 5V, T
case
= 25°
C
Max.
1.5
TBD
250
TBD
Units
V
V
mA
mA
CURVES
7000
Instantaneous on-state current I
T
- (A)
6000
5000
4000
3000
2000
1000
0
0.0
min 125°
C
max 125°
C
min 25°
C
max 25°
C
2.0
4.0
6.0
Instantaneous on-state voltage V
T
- (V)
Fig.2 Maximum & minimum on-state characteristics
V
TM
EQUATION
V
TM
= A + Bln (I
T
) + C.I
T
+D.√I
T
Where
A = 0.398265
B = 0.121095
C = 0.000524
D = -0.000007
these values are valid for T
j
= 125° for I
T
500A to 7200A
C
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DCR1910V85
SEMICONDUCTOR
10
130
Maximum case temperature, T
case
( C )
9
120
110
100
90
80
70
60
50
40
30
20
10
0
0
1000
2000
Mean power dissipation - (kW)
8
7
6
5
4
3
2
1
0
0
500
1000
1500
2000
2500
180
120
90
60
30
180
120
90
60
30
o
3000
Mean on-state current, I
T(AV)
- (A)
Mean on-state current, I
T(AV)
- (A)
Fig.3 On-state power dissipation – sine wave
Fig.4 Maximum permissible case temperature,
double side cooled – sine wave
(
o
C )
130
120
110
100
90
80
70
60
50
40
30
20
10
0
0
500
1000
1500
2000
2500
180
120
90
60
30
12
11
10
Heatsink
-
Mean power dissipation - (kW)
Maximum heatsink temperature, T
9
8
7
6
5
4
3
2
1
0
0
500
1000 1500 2000 2500 3000 3500
d.c.
180
120
90
60
30
Mean on-state current, I
T(AV)
- (A)
Mean on-state current, I
T(AV)
- (A)
Fig.5 Maximum permissible heatsink temperature,
double side cooled – sine wave
Fig.6 On-state power dissipation – rectangular wave
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