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HVU145

Description
SILICON, PIN DIODE
CategoryDiscrete semiconductor    diode   
File Size34KB,6 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

HVU145 Overview

SILICON, PIN DIODE

HVU145 Parametric

Parameter NameAttribute value
MakerHitachi (Renesas )
package instructionR-PDSO-G2
Contacts2
Reach Compliance Codeunknow
applicationSWITCHING
Minimum breakdown voltage60 V
ConfigurationSINGLE
Maximum diode capacitance0.45 pF
Diode component materialsSILICON
Maximum diode forward resistance1.8 Ω
Diode resistance test current10 mA
Diode resistance test frequency100 MHz
Diode typePIN DIODE
frequency bandHIGH FREQUENCY
JESD-30 codeR-PDSO-G2
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.15 W
Certification statusNot Qualified
surface mountYES
technologyPOSITIVE-INTRINSIC-NEGATIVE
Terminal formGULL WING
Terminal locationDUAL
HVU145
Silicon Epitaxial Planar Pin Diode for High Frequency Switching
ADE-208-1508A (Z)
Rev.1
Jun. 2002
Features
Low capacitance.(C = 0.45 pF max)
Low forward resistance. (rf = 1.8
max)
Ultra small Resin Package (URP) is suitable for surface mount design.
Ordering Information
Type No.
HVU145
Laser Mark
T5
Package Code
URP
Pin Arrangement
Cathode mark
Mark
1
T5
2
1. Cathode
2. Anode

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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