(normally-on) transistor that uses an advanced vertical
DMOS structure and a well-proven silicon gate
manufacturing process. This combination produces a
device with the power handling capabilities of bipolar
transistors and the high input impedance and positive
temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally induced
secondary breakdown.
Microchip’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications
where high breakdown voltage, high input impedance,
low input capacitance and fast switching speeds are
desired.
Applications
•
•
•
•
•
•
Normally-On Switches
Solid-State Relays
Converters
Constant-Current Sources
Power Supply Circuits
Telecommunication Switches
Package Type
3-lead SOT-89
(Top view)
DRAIN
SOURCE
DRAIN
GATE
See
Table 3-1
for pin information.
2018 Microchip Technology Inc.
DS20005705A-page 1
DN3525
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings†
Drain-to-Source Voltage ....................................................................................................................................... BV
DSX
Drain-to-Gate Voltage .......................................................................................................................................... BV
DGX
Gate-to-Source Voltage ......................................................................................................................................... ±20V
Operating Ambient Temperature, T
A
.................................................................................................... –55°C to +150°C
Storage Temperature, T
S
..................................................................................................................... –55°C to +150°C
† Notice:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only, and functional operation of the device at those or any other conditions above those
indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for
extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
Electrical Specifications:
T
A
= 25°C unless otherwise specified. All DC parameters are 100% tested at 25°C unless
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