MUN5316DW1,
NSBC143TPDXV6
Complementary Bias
Resistor Transistors
R1 = 4.7 kW, R2 =
8
kW
NPN and PNP Transistors with Monolithic
Bias Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base−emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
(3)
R
1
Q
1
Q
2
R
2
R
1
(5)
(6)
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PIN CONNECTIONS
(2)
(1)
R
2
•
S and NSV Prefix for Automotive and Other Applications
•
•
•
•
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
(4)
MARKING DIAGRAMS
6
16 M
G
G
1
SOT−363
CASE 419B
MAXIMUM RATINGS
(T
A
= 25°C both polarities Q1 (PNP) and Q2 (NPN), unless otherwise noted)
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Collector Current − Continuous
Input Forward Voltage
Input Reverse Voltage
−NPN
−PNP
Symbol
V
CBO
V
CEO
I
C
V
IN(fwd)
V
IN(rev)
6
5
Max
50
50
100
30
Unit
Vdc
Vdc
mAdc
Vdc
Vdc
16
M
G
1
16 M
G
G
SOT−563
CASE 463A
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device
MUN5316DW1T1G
NSVMUN5316DW1T1G
NSBC143TPDXV6T1G,
NSVB143TPDXV6T1G
Package
SOT−363
SOT−563
Shipping
†
3,000 / Tape & Reel
4,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2014
1
July, 2014 − Rev. 1
Publication Order Number:
DTC143TP/D
MUN5316DW1, NSBC143TPDXV6
THERMAL CHARACTERISTICS
Characteristic
MUN5316DW1 (SOT−363) One Junction Heated
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
MUN5316DW1 (SOT−363) Both Junction Heated
(Note 3)
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Lead
Junction and Storage Temperature Range
NSBC143TPDXV6 (SOT−563) One Junction Heated
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
NSBC143TPDXV6 (SOT−563) Both Junction Heated
(Note 3)
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature Range
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
3. Both junction heated values assume total power is sum of two equally powered channels.
P
D
(Note 1)
(Note 1)
(Note 1)
R
qJA
T
J
, T
stg
500
4.0
250
−55 to +150
°C
mW
mW/°C
°C/W
P
D
(Note 1)
(Note 1)
(Note 1)
R
qJA
357
2.9
350
mW
mW/°C
°C/W
P
D
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
R
qJA
R
qJL
T
J
, T
stg
250
385
2.0
3.0
493
325
188
208
−55 to +150
mW
mW/°C
°C/W
°C/W
°C
P
D
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
R
qJA
187
256
1.5
2.0
670
490
mW
mW/°C
°C/W
Symbol
Max
Unit
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2
MUN5316DW1, NSBC143TPDXV6
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C both polarities Q
1
(PNP) and Q
2
(NPN), unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(V
CB
= 50 V, I
E
= 0)
Collector−Emitter Cutoff Current
(V
CE
= 50 V, I
B
= 0)
Emitter−Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
Collector−Base Breakdown Voltage
(I
C
= 10
mA,
I
E
= 0)
Collector−Emitter Breakdown Voltage (Note 4)
(I
C
= 2.0 mA, I
B
= 0)
ON CHARACTERISTICS
DC Current Gain (Note 4)
(I
C
= 5.0 mA, V
CE
= 10 V)
Collector−Emitter Saturation Voltage (Note 4)
(I
C
= 10 mA, I
B
= 0.3 mA)
Input Voltage (off)
(V
CE
= 5.0 V, I
C
= 100
mA)
(NPN)
(V
CE
= 5.0 V, I
C
= 100
mA)
(PNP)
Input Voltage (on)
(V
CE
= 0.2 V, I
C
= 10 mA) (NPN)
(V
CE
= 0.2 V, I
C
= 10 mA) (PNP)
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
Input Resistor
Resistor Ratio
h
FE
160
V
CE(sat)
−
V
i(off)
−
V
i(on)
−
V
OL
−
V
OH
4.9
R1
R
1
/R
2
3.3
−
−
4.7
−
−
6.1
−
kW
−
0.2
Vdc
0.9
1.0
−
Vdc
0.6
0.58
−
Vdc
−
0.25
Vdc
350
−
Vdc
I
CBO
−
I
CEO
−
I
EBO
−
V
(BR)CBO
50
V
(BR)CEO
50
−
−
−
−
Vdc
−
1.9
Vdc
−
500
mAdc
−
100
nAdc
nAdc
Symbol
Min
Typ
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle
≤
2%.
400
P
D
, POWER DISSIPATION (mW)
350
300
250
200
(1) (2)
150
100
50
0
−50
−25
0
25
50
75
100
125
150
(1) SOT−363; 1.0 x 1.0 inch Pad
(2) SOT−563; Minimum Pad
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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MUN5316DW1, NSBC143TPDXV6
TYPICAL CHARACTERISTICS − NPN TRANSISTORS
MUN5316DW1, NSBC143TPDXV6
1
V
CE(sat)
, COLLECTOR−EMITTER
VOLTAGE (V)
I
C
/I
B
= 10
h
FE
, DC CURRENT GAIN
1000
150°C
25°C
100
−55°C
25°C
0.1
150°C
10
−55°C
V
CE
= 10 V
1
20
30
40
50
1
10
I
C
, COLLECTOR CURRENT (mA)
100
0.01
0
10
I
C
, COLLECTOR CURRENT (mA)
Figure 2. V
CE(sat)
vs. I
C
3.2
C
ob
, OUTPUT CAPACITANCE (pF)
I
C
, COLLECTOR CURRENT (mA)
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0
10
20
30
40
50
V
R
, REVERSE VOLTAGE (V)
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
100
150°C
10
Figure 3. DC Current Gain
25°C
−55°C
1
0.1
V
O
= 5 V
0.01
0
1
2
V
in
, INPUT VOLTAGE (V)
3
4
Figure 4. Output Capacitance
100
Figure 5. Output Current vs. Input Voltage
V
in
, INPUT VOLTAGE (V)
10
25°C
−55°C
1
150°C
V
O
= 0.2 V
0.1
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage vs. Output Current
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4
MUN5316DW1, NSBC143TPDXV6
TYPICAL CHARACTERISTICS − PNP TRANSISTORS
MUN5316DW1, NSBC143TPDXV6
V
CE(sat)
, COLLECTOR−EMITTER VOLT-
AGE (V)
1
I
C
/I
B
= 10
h
FE
, DC CURRENT GAIN
1000
150°C
25°C
100
−55°C
0.1
150°C
10
V
CE
= 10 V
1
25°C
−55°C
0.01
0
20
40
30
10
I
C
, COLLECTOR CURRENT (mA)
50
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 7. V
CE(sat)
vs. I
C
Figure 8. DC Current Gain
10
C
ob
, OUTPUT CAPACITANCE (pF)
I
C
, COLLECTOR CURRENT (mA)
9
8
7
6
5
4
3
2
1
0
0
10
20
30
40
V
R
, REVERSE VOLTAGE (V)
50
f = 10 kHz
l
E
= 0 A
T
A
= 25°C
100
150°C
10
25°C
−55°C
1
0.1
0.01
V
O
= 5 V
0
1
2
3
V
in
, INPUT VOLTAGE (V)
4
5
0.001
Figure 9. Output Capacitance
Figure 10. Output Current vs. Input Voltage
100
V
O
= 0.2 V
V
in
, INPUT VOLTAGE (V)
10 25°C
−55°C
1
150°C
0.1
0
10
20
30
40
I
C
, COLLECTOR CURRENT (mA)
50
Figure 11. Input Voltage vs. Output Current
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