Rev 3: Nov 2004
AO4916, AO4916L( Green Product )
Dual N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AO4916 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in DC-
DC converters. A Schottky diode is co-packaged in
parallel with the synchronous MOSFET to boost
efficiency further. AO4916L
( Green Product ) is offered in a lead-free package.
Features
V
DS
(V) = 30V
I
D
= 8.5A
R
DS(ON)
< 17mΩ (V
GS
= 10V)
R
DS(ON)
< 27mΩ (V
GS
= 4.5V)
SCHOTTKY
V
DS
(V) = 30V, I
F
= 3A, V
F
=0.5V@1A
D1
D2
D2
G1
S1/A
1
2
3
4
8
7
6
5
G2
D1/S2/K
D1/S2/K
D1/S2/K
K
D2
G1
S1
A
G2
S2
SOIC-8
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
Gate-Source Voltage
T
A
=25°C
Continuous Drain Current
Pulsed Drain Current
B
A
MOSFET
30
±20
8.5
6.6
40
Schottky
Units
V
V
A
V
GS
T
A
=70°C
I
D
I
DM
V
KA
T
A
=25°C
A
Schottky reverse voltage
Continuous Forward Current
Pulsed Forward Current
Power Dissipation
Junction and Storage Temperature Range
Parameter: Thermal Characteristics MOSFET
t
≤
10s
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
B
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
F
I
FM
P
D
T
J
, T
STG
Symbol
R
θJA
R
θJL
R
θJA
R
θJL
2
1.28
-55 to 150
Typ
48
74
35
47.5
71
32
30
3
2
40
2
1.28
-55 to 150
Max
62.5
110
40
62.5
110
40
V
A
W
°C
Units
°C/W
Steady-State
Steady-State
t
≤
10s
Steady-State
Steady-State
Maximum Junction-to-Lead
C
Thermal Characteristics Schottky
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
Maximum Junction-to-Ambient
A
°C/W
Alpha & Omega Semiconductor, Ltd.
AO4916, AO4916L
Electrical Characteristics (T =25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=24V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
= ±20V
V
DS
=V
GS
I
D
=250µA
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=8.5A
R
DS(ON)
g
FS
V
SD
I
S
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=6A
Forward Transconductance
V
DS
=5V, I
D
=8.5A
I
S
=1A,V
GS
=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
T
J
=125°C
1
40
14
20
21
23
0.76
1
3
1040
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
0.35
180
110
0.7
19.2
V
GS
=10V, V
DS
=15V, I
D
=8.5A
9.36
2.6
4.2
5.2
V
GS
=10V, V
DS
=15V, R
L
=1.8Ω,
R
GEN
=3Ω
I
F
=8.5A, dI/dt=100A/µs
4.4
17.3
3.3
16.7
9.3
0.45
0.007
3.2
12
37
7.5
6.5
25
5
21
11
0.5
0.05
10
20
pF
mA
0.85
24
12
1250
17
25
27
1.8
Min
30
0.005
1
5
100
3
Typ
Max
Units
V
µA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
V
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Q
rr
Body Diode Reverse Recovery Charge I
F
=8.5A, dI/dt=100A/µs
SCHOTTKY PARAMETERS
V
F
Forward Voltage Drop
I
F
=1.0A
I
rm
C
T
Maximum reverse leakage current
Junction Capacitance
V
R
=30V
V
R
=30V, T
J
=125°C
V
R
=30V, T
J
=150°C
V
R
=15V
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
µs
pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
2
Alpha & Omega Semiconductor, Ltd.
AO4916, AO4916L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
I
D
(A)
15
10
5
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
26
V
GS
=4.5V
Normalized On-Resistance
24
22
R
DS(ON)
(m
Ω
)
20
18
16
14
12
10
0
5
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
1.0E+01
1.0E+00
40
R
DS(ON)
(m
Ω
)
I
D
=8.5A
I
S
(A)
1.0E-01
125°C
1.0E-02
25°C
1.0E-03
20
25°C
10
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
V
GS
=10V
1.6
V
GS
=10V
1.4
I
D
=8.5A
V
GS
=4.5V
1.2
4V
10V
4.5V
3.5V
12
I
D
(A)
125°C
8
V
GS
=3V
4
20
16
V
DS
=5V
13.4
22
0
1.5
2
2.5
25°C
16
26
0.76
3
3.5
4
V
GS
(Volts)
Figure 2: Transfer Characteristics
1
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
30
125°C
Alpha & Omega Semiconductor, Ltd.
AO4916, AO4916L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
V
GS
(Volts)
6
4
2
0
0
4
8
12
16
20
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
1500
V
DS
=15V
I
D
=8.5A
Capacitance (pF)
1250
C
iss
1000
750
500
250
0
0
C
rss
5
10
C
oss
13.4
22
15
0.76
20
16
26
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
100.0
R
DS(ON)
limited
1ms
10ms
0.1s
100µs
10µs
Power (W)
50
40
30
20
10
0
0.001
T
J(Max)
=150°C
T
A
=25°C
I
D
(Amps)
10.0
1.0
1s
T
J(Max)
=150°C
T
A
=25°C
10s
DC
0.1
0.1
1
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
Document No.
PD-00071
ALPHA & OMEGA
SEMICONDUCTOR, LTD.
Version
Title
rev C
AO4916 Marking Description
SO-8 PACKAGE MARKING DESCRIPTION
Standard product
Green product
NOTE:
LOGO
4916
F&A
Y
W
LT
- AOS LOGO
- PART NUMBER CODE.
- FOUNDRY AND ASSEMBLY LOCATION
- YEAR CODE
- WEEK CODE.
- ASSEMBLY LOT CODE
PART NO. DESCRIPTION
AO4916
AO4916L
Standard product
Green product
CODE
4916
4916
京公网安备 11010802033920号
EEWORLD
