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BUK6246-75C118

Description
MOSFET N-Chan 75V 22A 60W
Categorysemiconductor    Discrete semiconductor   
File Size172KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BUK6246-75C118 Overview

MOSFET N-Chan 75V 22A 60W

BUK6246-75C118 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerNXP
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-252-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage75 V
Id - Continuous Drain Current22 A
Rds On - Drain-Source Resistance46 mOhms
Vgs - Gate-Source Voltage20 V
ConfigurationSingle
Pd - Power Dissipation60 W
PackagingReel
Transistor Type1 N-Channel
Factory Pack Quantity2500
Unit Weight0.139332 oz
DP
AK
BUK6246-75C
N-channel TrenchMOS intermediate level FET
Rev. 1 — 13 July 2011
Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for standard and logic level
gate drive sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V Automotive systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
Conditions
T
j
25 °C; T
j
175 °C
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1
T
mb
= 25 °C; see
Figure 2
V
GS
= 10 V; I
D
= 10 A;
T
j
= 25 °C;
see
Figure 11
Min
-
-
-
-
Typ
-
-
-
39
Max Unit
75
22
60
46
V
A
W
mΩ
Static characteristics
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