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BSC079N10NS-G

Description
MOSFET N-Ch 100V 100A TDSON-8 OptiMOS 2
Categorysemiconductor    Discrete semiconductor   
File Size659KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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MOSFET N-Ch 100V 100A TDSON-8 OptiMOS 2

BSC079N10NS-G Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerInfineon
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTDSON-8
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current13.4 A
Rds On - Drain-Source Resistance7.9 mOhms
Vgs - Gate-Source Voltage20 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle Quad Drain Triple Source
Pd - Power Dissipation156 W
Channel ModeEnhancement
PackagingCut Tape
PackagingMouseReel
PackagingReel
Height1.27 mm
Length5.9 mm
Transistor Type1 N-Channel
Width5.15 mm
Fall Time11 ns
Rise Time40 ns
Factory Pack Quantity5000
Typical Turn-Off Delay Time38 ns
Typical Turn-On Delay Time24 ns
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