BSC520N15NS3GATMA1 datasheet, PDF

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BSC520N15NS3GATMA1: DescriptionMOSFET MV POWER MOS; CategoryDiscrete semiconductor The transistor; File Size655KB，10 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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BSC520N15NS3GATMA1 Overview

MOSFET MV POWER MOS

BSC520N15NS3GATMA1 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	SMALL OUTLINE, R-PDSO-F5
Contacts	8
Reach Compliance Code	not_compliant
ECCN code	EAR99
Samacsys Description	BSC520N15NS3GATMA1 N-Channel MOSFET, 21 A, 150 V OptiMOS 3, 8-Pin TDSON Infineon
Avalanche Energy Efficiency Rating (Eas)	60 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	150 V
Maximum drain current (ID)	21 A
Maximum drain-source on-resistance	0.052 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-F5
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	5
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	57 W
Maximum pulsed drain current (IDM)	84 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	FLAT
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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BSC520N15NS3GATMA1 Related Products

	BSC520N15NS3GATMA1	BSC520N15NS3GXT	BSC520N15NS3 G	BSC520N15NS3G
Description	MOSFET MV POWER MOS	Power Field-Effect Transistor, 21A I(D), 150V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8	Drain-source voltage (Vdss): 150V Continuous drain current (Id) (at 25°C): 21A (Tc) Gate-source threshold voltage: 4V @ 35uA Drain-source on-resistance: 52mΩ @ 18A, 10V Maximum power dissipation (Ta=25°C): 57W(Tc) Type: N channel N channel, 150V, 21A	Drain-source voltage (Vdss): 150V Continuous drain current (Id) (at 25°C): 21A (Tc) Gate-source threshold voltage: 4V @ 35uA Drain-source on-resistance: 52mΩ @ 18A, 10V Maximum power dissipation (Ta=25°C): 57W(Tc) Type: N channel
Is it Rohs certified?	conform to	conform to	-	conform to
Maker	Infineon	Infineon	-	Infineon
package instruction	SMALL OUTLINE, R-PDSO-F5	SMALL OUTLINE, R-PDSO-F5	-	TDSON-8
Reach Compliance Code	not_compliant	compliant	-	not_compliant
ECCN code	EAR99	EAR99	-	EAR99
Avalanche Energy Efficiency Rating (Eas)	60 mJ	60 mJ	-	60 mJ
Shell connection	DRAIN	DRAIN	-	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	150 V	150 V	-	150 V
Maximum drain current (ID)	21 A	21 A	-	21 A
Maximum drain-source on-resistance	0.052 Ω	0.052 Ω	-	0.052 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-F5	R-PDSO-F5	-	R-PDSO-F5
Number of components	1	1	-	1
Number of terminals	5	5	-	5
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	-	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	-	150 °C
Minimum operating temperature	-55 °C	-55 °C	-	-55 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	-	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	-	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	-	N-CHANNEL
Maximum power dissipation(Abs)	57 W	57 W	-	57 W
Maximum pulsed drain current (IDM)	84 A	84 A	-	84 A
surface mount	YES	YES	-	YES
Terminal form	FLAT	FLAT	-	FLAT
Terminal location	DUAL	DUAL	-	DUAL
transistor applications	SWITCHING	SWITCHING	-	SWITCHING
Transistor component materials	SILICON	SILICON	-	SILICON
Base Number Matches	1	1	-	1

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