BSS83
MOSFET N-channel enhancement switching transistor
Rev. 03 — 21 November 2007
Product data sheet
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NXP Semiconductors
NXP
Semiconductors
Product specification
MOSFET N-channel enhancement switching transistor
DESCRIPTION
Symmetrical insulated-gate silicon
MOS field-effect transistor of the
N-channel enhancement mode type.
The transistor is sealed in a SOT143
envelope and features a low ON
resistance and low capacitances. The
transistor is protected against
excessive input voltages by
integrated back-to-back diodes
between gate and substrate.
APPLICATIONS
•
analog and/or digital switch
•
switch driver
PINNING
1
2
3
4
= substrate (b)
= source
= drain
= gate
Fig.1 Simplified outline and symbol.
1
Top view
2
MAM389
BSS83
Marking code:
BSS83 =
%
M9
handbook, halfpage
4
3
d
b
g
s
Note
1. Drain and source are
interchangeable.
QUICK REFERENCE DATA
Drain-source voltage
Source-drain voltage
Drain-substrate voltage
Source-substrate voltage
Drain current (DC)
Total power dissipation up to T
amb
= 25
°C
Gate-source threshold voltage
V
DS
= V
GS
; V
SB
= 0;
I
D
= 1
µA
Drain-source ON-resistance
V
GS
= 10 V; V
SB
= 0; I
D
= 0.1 mA
Feed-back capacitance
V
GS
= V
BS
=
−15
V;
V
DS
= 10 V; f = 1 MHz
C
rss
typ.
0.6 pF
R
DSon
<
45
Ω
V
GS(th)
>
<
0.1 V
2.0 V
V
DS
V
SD
V
DB
V
SB
I
D
P
tot
max.
max.
max.
max.
max.
max.
10 V
10 V
15 V
15 V
50 mA
230 mW
Rev. 03 - 21 November 2007
2 of 9
NXP
Semiconductors
Product specification
MOSFET N-channel enhancement switching transistor
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage
Source-drain voltage
Drain-substrate voltage
Source-substrate voltage
Drain current (DC)
Total power dissipation up to T
amb
= 25
°C
(1)
Storage temperature range
Junction temperature
THERMAL RESISTANCE
From junction to ambient in free air
(1)
R
th j-a
=
V
DS
V
SD
V
DB
V
SB
I
D
P
tot
T
stg
T
j
max.
max.
max.
max.
max.
max.
max.
10 V
10 V
15 V
15 V
BSS83
50 mA
230 mW
125
°C
−65
to
+
150
°C
430 K/W
Rev. 03 - 21 November 2007
3 of 9
NXP
Semiconductors
Product specification
MOSFET N-channel enhancement switching transistor
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified
Drain-source breakdown voltage
V
GS
= V
BS
=
−5
V; I
D
= 10 nA
Source-drain breakdown voltage
V
GD
= V
BD
=
−5
V; I
D
= 10 nA
Drain-substrate breakdown voltage
V
GB
= 0; I
D
= 10 nA; open source
Source-substrate breakdown voltage
V
GB
= 0; I
D
= 10 nA; open drain
Drain-source leakage current
V
GS
= V
BS
=
−2
V; V
DS
= 6,6 V
Source-drain leakage current
V
GD
= V
BD
=
−2
V; V
SD
= 6,6 V
Forward transconductance at f = 1 kHz
V
DS
= 10 V; V
SB
= 0; I
D
= 20 mA
Gate-source threshold voltage
V
DS
= V
GS
; V
SB
= 0; I
D
= 1
µA
Drain-source ON-resistance
I
D
= 0,1 mA;
V
GS
= 5 V; V
SB
= 0
V
GS
= 10 V; V
SB
= 0
V
GS
= 3,2 V; V
SB
= 6,8 V (see Fig.4)
Gate-substrate zener voltages
V
DB
= V
SB
= 0;
−I
G
= 10
µA
V
DB
= V
SB
= 0;
+I
G
= 10
µA
Capacitances at f = 1 MHz
V
GS
= V
BS
=
−15
V; V
DS
= 10 V
Feed-back capacitance
Input capacitance
Output capacitance
Switching times (see Fig.2)
V
DD
= 10 V; V
i
= 5 V
t
on
t
off
Note
1. Device mounted on a ceramic substrate of 8 mm
×
10 mm
×
0,7 mm.
typ.
typ.
C
rss
C
iss
C
oss
typ.
typ.
typ.
V
Z(1)
V
Z(2)
>
>
R
DSon
R
DSon
R
DSon
<
<
typ.
<
V
GS(th)
>
<
g
fs
>
typ.
I
SDoff
<
I
DSoff
<
V
(BR)SBO
>
V
(BR)DBO
>
V
(BR)SDX
>
V
(BR)DSX
>
BSS83
10 V
10 V
15 V
15 V
10 nA
10 nA
10 mS
15 mS
0,1 V
2,0 V
70
Ω
45
Ω
80
Ω
120
Ω
12,5 V
12,5 V
0,6 pF
1,5 pF
1,0 pF
1,0 ns
5,0 ns
Rev. 03 - 21 November 2007
4 of 9
NXP
Semiconductors
Product specification
MOSFET N-channel enhancement switching transistor
Pulse generator:
R
i
t
r
t
f
t
p
δ
=
<
<
=
<
50
Ω
0,5 ns
1,0 ns
20 ns
0,01
BSS83
handbook, full pagewidth
VDD
50
Ω
0.1
µF
Vo
630
Ω
INPUT
90%
90%
10%
tr
tf
ton
90%
10%
toff
90%
Vi
50
Ω
T.U.T
OUTPUT
MBK297
10%
10%
MBK296
Fig.2 Switching times test circuit and input and output waveforms.
handbook, halfpage
60
MDA250
handbook, halfpage
1.2
MDA251
ID
(mA)
40
VGS = 4.5 V
4V
ID
(mA)
0.8
3.5 V
3V
VGS = 10 V
5V
4V
3.2 V
3V
20
2.5 V
2V
0.4
2V
0
0
4
8
VDS (V)
12
0
0
40
80
VDSon (mV)
120
T
j
= 25
°C.
T
j
= 25
°C.
Fig.3 V
SB
= 0; typical values.
Fig.4 V
SB
= 6,8 V; typical values.
Rev. 03 - 21 November 2007
5 of 9
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