ZTX457 datasheet, PDF - EEWORLD Datasheet

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ZTX457: DescriptionBipolar Transistors - BJT NPN High Voltage; Categorysemiconductor Discrete semiconductor; File Size35KB，1 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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Bipolar Transistors - BJT NPN High Voltage

ZTX457 Parametric

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	Diodes
Product Category	Bipolar Transistors - BJT
RoHS	Details
Mounting Style	Through Hole
Package / Case	TO-92-3
Transistor Polarity	NPN
Configuration	Single
Collector- Emitter Voltage VCEO Max	300 V
Collector- Base Voltage VCBO	300 V
Emitter- Base Voltage VEBO	5 V
Collector-Emitter Saturation Voltage	0.3 V
Maximum DC Collector Current	0.5 A
Gain Bandwidth Product fT	75 MHz
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
DC Current Gain hFE Max	50 at 10 mA at 10 V
Height	4.01 mm
Length	4.77 mm
Packaging	Bulk
Width	2.41 mm
Continuous Collector Current	0.5 A
DC Collector/Base Gain hfe Min	50 at 10 mA at 10 V, 50 at 50 mA at 10 V, 25 at 100 mA at 10 V
Pd - Power Dissipation	1 W
Factory Pack Quantity	4000
Unit Weight	0.016000 oz

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NPN SILICON PLANAR MEDIUM POWER

HIGH VOLTAGE TRANSISTOR

ISSUE 2 MARCH 1994

FEATURES

* 300 Volt V

CEO

* 0.5 Amp continuous current

* P

tot

= 1 Watt

ZTX457

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

E-Line

TO92 Compatible

VALUE

300

5

1

500

1

-55 to +200

UNIT

V

A

mA

W

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Base-Emitter

Turn On Voltage

SYMBOL

V

(BR)CBO

V

CEO(sus)

V

(BR)EBO

I

CBO

MIN.

300

5

100

10

100

0.3

1

50

25

75

TYP.

MAX.

UNIT

V

nA

CONDITIONS.

I

C

=100

µ

A, I

E

=0

I

C

=10mA, I

B

=0*

I

E

=100

µ

A

V

CB

=200V

V

CB

=200V, T

amb

=100°C

V

EB

=4V

I

C

=100mA, I

B

=10mA*

I

C

=100mA, I

B

=10mA*

IC=100mA, V

CE

=10V*

I

C

=10mA, V

CE

=10V*

I

C

=50mA, V

CE

=10V*

I

C

=100mA, V

CE

=10V*

MHz

I

C

=50mA, V

CE

=10V

f=20MHz

µ

A

Emitter Cut-Off Current I

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

nA

V

Static Forward Current h

FE

Transfer Ratio

Transition Frequency

f

T

300

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2%

3-181

ZTX457 Related Products

	ZTX457
Description	Bipolar Transistors - BJT NPN High Voltage
Product Attribute	Attribute Value
Manufacturer	Diodes
Product Category	Bipolar Transistors - BJT
RoHS	Details
Mounting Style	Through Hole
Package / Case	TO-92-3
Transistor Polarity	NPN
Configuration	Single
Collector- Emitter Voltage VCEO Max	300 V
Collector- Base Voltage VCBO	300 V
Emitter- Base Voltage VEBO	5 V
Collector-Emitter Saturation Voltage	0.3 V
Maximum DC Collector Current	0.5 A
Gain Bandwidth Product fT	75 MHz
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
DC Current Gain hFE Max	50 at 10 mA at 10 V
Height	4.01 mm
Length	4.77 mm
Packaging	Bulk
Width	2.41 mm
Continuous Collector Current	0.5 A
DC Collector/Base Gain hfe Min	50 at 10 mA at 10 V, 50 at 50 mA at 10 V, 25 at 100 mA at 10 V
Pd - Power Dissipation	1 W
Factory Pack Quantity	4000
Unit Weight	0.016000 oz

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