Datasheet
Serial EEPROM Series Automotive EEPROM
125°C Operation SPI BUS EEPROM
BR35Hxxx-WC
(16K 32K 64K 128K)
General Description
BR35Hxxx-WC is a SPI BUS interface method serial EEPROM.
Features
High Speed Clock Operation up to 5MHz(Max)
2.5V to 5.5V Single Power Source Operation most suitable for
Battery use.
Page Write Mode Useful for Initial Value at Factory Shipment.
Highly Reliable Connection by Au Pad and Au Wire.
For SPI Bus Interface (CPOL, CPHA)=(0,0),(1,1)
Auto Erase and Auto End Function at Data Rewrite.
Low Operating Current
At Write Operation (5V): 0.6mA(Typ)
At Read Operation (5V): 1.3mA(Typ)
At Standby Operation (5V): 0.1µA(Typ)
Address Auto Increment Function at Read Operation.
Write Mistake Prevention Function
Write Prohibition at Power on.
Write Prohibition by Command Code (WRDI)
Write Mistake Prevention Function at Low Voltage.
Data at Shipment Memory Array: FFh.
Data Retention : 50 Years(Ta≤125°C)
Endurance : 300,000 Cycles(Ta=125°C)
AEC-Q100 Qualified
Packages
W(Typ) x D(Typ) x H(Max)
SOP8
5.00mm x 6.20mm x 1.71mm
TSSOP-B8
3.00mm x 6.40mm x 1.20mm
SOP- J8
4.90mm x 6.00mm x 1.65mm
MSOP8
2.90mm x 4.00mm x 0.90mm
Page write
Number of pages
32Byte
BR35H160-WC
BR35H320-WC
BR35H640-WC
64Byte
Product Number
BR35H128-WC
BR35Hxxx-WC
Capacity
16Kbit
32Kbit
64Kbit
128Kbit
Bit Format
2K×8
4K×8
8K×8
16Kx8
Product Name
BR35H160-WC
BR35H320-WC
BR35H640-WC
BR35H128-WC
Supply
Voltage
2.5V to 5.5V
2.5V to 5.5V
2.5V to 5.5V
2.5V to 5.5V
MSOP8
●
●
-
-
TSSOP-B8
●
●
●
-
SOP8
●
●
●
●
SOP-J8
●
●
●
●
○Product
structure：Silicon monolithic integrated circuit
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©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111½14½001
○This
product is not designed protection against radioactive rays
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TSZ02201-0R1R0G100170-1-2
22.Nov.2013 Rev.003
BR35Hxxx-WC (16K 32K 64k 128k)
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Impressed Voltage
Permissible
Dissipation
Storage
Temperature Range
Operating
Temperature Range
Terminal Voltage
Symbol
Vcc
Pd
Limits
-0.3 to +6.5
0.56(SOP8)
0.56(SOP-J8)
0.41(TSSOP-B8)
0.38(MSOP8)
-65 to +150
-40 to +125
-0.3 to Vcc +0.3
Unit
V
W
Remarks
Datasheet
When using at Ta=25°C or higher, 4.5mW to be reduced per 1°C
When using at Ta=25°C or higher, 4.5mW to be reduced per 1°C
When using at Ta=25°C or higher, 3.3mW to be reduced per 1°C
When using at Ta=25°C or higher, 3.1mW to be reduced per 1°C
Tstg
Topr
-
°C
°C
V
Caution:
Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over
the absolute maximum ratings
Memory Cell Characteristics
(Vcc=2.5V to 5.5V)
Parameter
(Note1)
Limits
Min
1,000,000
500,000
300,000
100
60
50
Typ
-
-
-
-
-
-
Max
-
-
-
-
-
-
Unit
Times
Times
Times
Years
Years
Years
Condition
Ta≤85°C
Ta≤105°C
Ta≤125°C
Ta≤25°C
Ta≤105°C
Ta≤125°C
Endurance
Data Retention
(Note1)
(Note1) Not 100% TESTED
Recommended Operating Ratings
Parameter
Supply Voltage
Input Voltage
Symbol
Vcc
V
IN
Limits
2.5 to 5.5
0 to Vcc
Unit
V
Input / Output Capacitance
(Ta=25°C, frequency=5MHz)
Parameter
Input Capacitance
(Note1)
Output Capacitance
(Note1)
(Note1) Not 100% TESTED
Symbol
C
IN
C
OUT
Min
－
－
Max
8
8
Unit
pF
Conditions
V
IN
=GND
V
OUT
=GND
Electrical Characteristics
(Unless otherwise specified, Ta=-40°C to +125°C, Vcc=2.5V to 5.5V)
Parameter
“H” Input Voltage
“L” Input Voltage
“L” Output Voltage
“H” Output Voltage
Input Leakage Current
Output Leakage Current
Symbol
V
IH
V
IL
V
OL
V
OH
I
LI
I
LO
I
CC1
Operating Current
(Write)
I
CC2
I
CC3
I
CC4
I
SB
－
－
－
－
－
－
－
－
Limits
Min
0.7xVcc
-0.3
0
Vcc-0.5
-10
-10
－
Typ
－
－
－
－
－
－
－
2.0
Max
Vcc+0.3
0.3xVcc
0.4
Vcc
10
10
(Note1)
Unit
V
V
V
V
µA
µA
mA
2.5V≤Vcc≤5.5V
2.5V≤Vcc≤5.5V
I
OL
=2.1mA
I
OH
=-0.4mA
V
IN
=0V to Vcc
Conditions
2.5
(Note2)
3.0
(Note1)
5.5
(Note2)
1.5
2.0
10
mA
mA
mA
µA
Operating Current
(Read)
Standby Current
(Note1) BR35H160/320-WC
(Note2) BR35H640/128-WC
V
OUT
=0V to Vcc, CSB=Vcc
Vcc=2.5V, f
SCK
=5MHz, t
E/W
=5ms,
V
IH
/V
IL
=0.9Vcc/0.1Vcc, SO=OPEN
Byte Write, Page Write
Vcc=5.5V, f
SCK
=5MHz, t
E/W
=5ms,
V
IH
/V
IL
=0.9Vcc/0.1Vcc, SO=OPEN
Byte Write, Page Write
Vcc=2.5V, f
SCK
=5MHz, V
IH
/V
IL
=0.9Vcc/0.1Vcc
SO=OPEN, Read, Read Status Register
Vcc=5.5V, f
SCK
=5MHz, V
IH
/V
IL
=0.9Vcc/0.1Vcc
SO=OPEN, Read, Read Status Register
Vcc=5.5V
CSB=Vcc, SCK=SI=Vcc or GND, SO=OPEN
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©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111½15½001
2/27
TSZ02201-0R1R0G100170-1-2
22.Nov.2013 Rev.003
BR35Hxxx-WC (16K 32K 64k 128k)
Operating Timing Characteristics
(Ta=-40°C to +125°C, unless otherwise specified, load capacitance C
L1
=100pF)
Parameter
SCK Frequency
SCK High Time
SCK Low Time
CSB High Time
CSB Setup Time
CSB Hold Time
SCK Setup Time
SCK Hold Time
SI Setup Time
SI Hold Time
Data Output Delay Time1
Data Output Delay Time2 (C
L2
=30pF)
Output Hold Time
Output Disable Time
SCK Rise Time
(Note1)
SCK Fall Time
(Note1)
OUTPUT Rise Time
(Note1)
OUTPUT Fall Time
(Note1)
Write Time
(Note1) Not 100% TESTED
Datasheet
Symbol
f
SCK
t
SCKWH
t
SCKWL
t
CS
t
CSS
t
CSH
t
SCKS
t
SCKH
t
DIS
t
DIH
t
PD1
t
PD2
t
OH
t
OZ
t
RC
t
FC
t
RO
t
FO
t
E/W
2.5≤Vcc≤5.5V
Min
Typ
Max
-
-
5
85
-
-
85
-
-
85
-
-
90
-
-
85
-
-
90
-
-
90
-
-
20
-
-
30
-
-
-
-
70
-
-
55
0
-
-
-
-
100
-
-
1
-
-
1
-
-
50
-
-
50
-
-
5
Unit
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
ns
ns
ms
AC measurement Conditions
Parameter
Load Capacitance 1
Load Capacitance 2
Input Rise Time
Input Fall Time
Input Voltage
Input / Output Judgment Voltage
Symbol
C
L1
C
L2
-
-
-
-
Limits
Min
Typ
Max
-
-
100
-
-
30
-
-
50
-
-
50
0.2Vcc / 0.8Vcc
0.3Vcc / 0.7Vcc
Unit
pF
pF
ns
ns
V
V
Sync Data Input / Output Timing
tCS
tCSS
tCS
CSB
tSCKS
tSCKWL
tSCKWH
tRC
tFC
CSB
SCK
SI
tPD
tOH
tCSH tSCKH
SCK
tDIS tDIH
SI
SO
High-Z
tRO,tFO
tOZ
High-Z
SO
Figure 1. Input Timing
Data through SI enters the IC in sync with the data
rise edge of SCK. Please input address and data
starting from the most significant bit MSB.
Figure 2. Input / Output Timing
Data through SO is output in sync with the data fall
edge of SCK. Data is output starting from the most
significant bit MSB.
t
OZ
Measurement Condition
IL is the load current that changes the SO voltage to 0.5×Vcc. IL=±1mA.
After CSB starts to rise, the time needed for SO to change to High-Z is defined with 10% changing point from SO=High or
SO=Low.
0.8Vcc
Signal Input
CSB
SO
Vcc
NC
0.7Vcc
CSB
0.2Vcc
IL=±1mA
CL1=100pF
Signal Input
NC
GND
SCK
SI
Signal Input
SO
High
Low
0.9Vcc
0.1Vcc
0.5Vcc
Figure 3. t
OZ
Measurement Circuit
Figure 4. t
OZ
Measurement Timing
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©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111½15½001
3/27
TSZ02201-0R1R0G100170-1-2
22.Nov.2013 Rev.003
BR35Hxxx-WC (16K 32K 64k 128k)
Block Diagram
Datasheet
CSB
INSTRUCTION DECODE
CONTROL CLOCK
VOLTAGE
DETECTION
SCK
GENERATION
WRITE
INHIBITION
HIGH VOLTAGE
GENERATOR
(Note1) 11bit: BR35H160-WC
12bit: BR35H320-WC
13bit: BR35H640-WC
14bit: BR35H128-WC
SI
INSTRUCTION
REGISTER
ADDRESS
REGISTER
(Note1)
11½14bit
STATUS REGISTER
ADDRESS
DECODER
(Note1)
11½14bit
16½128K
EEPROM
DATA
READ/WRITE
8bit
SO
REGISTER
AMP
8bit
Pin Configuration
TOP VIEW
Vcc
NC
SCK
SI
BR35H160-WC
BR35H320-WC
BR35H640-WC
BR35H128-WC
CSB
SO
NC
GND
Pin Description
Terminal Name
Vcc
GND
CSB
SCK
SI
SO
NC
Input/Output
–
–
Input
Input
Input
Output
–
Function
Power Supply to be connected
All input / output reference voltage, 0V
Chip select input
Serial clock input
Start bit, ope code, address, and serial data input
Serial data output
Non connection
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©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111½15½001
4/27
TSZ02201-0R1R0G100170-1-2
22.Nov.2013 Rev.003
BR35Hxxx-WC (16K 32K 64k 128k)
T
ypical Performance Curves
The following characteristic data are typ value.
Datasheet
Figure 5. "H" Input Voltage vs Supplty Voltage
Figure 6. "L" Input Voltage vs Supply Voltage
Figure 7. "L" Output Voltage vs Output Current
(Vcc=2.5V)
Figure 8. "H" Output Voltage vs Output Current
(Vcc=2.5V)
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©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111½15½001
5/27
TSZ02201-0R1R0G100170-1-2
22.Nov.2013 Rev.003
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