VS-MBR40L15CWPbF, VS-MBR40L15CW-N3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 2 x 20 A
Base
common
cathode
2
FEATURES
• 125 °C T
J
operation (V
R
< 5 V)
• Optimized for OR-ing applications
• Ultralow forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long
term reliability
3
2
1
1
3
Anode
Anode
2
1
2
Common
cathode
TO-247AC
• High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Available
• Designed and qualified according to JEDEC-JESD47
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
TO-247AC
2 x 20 A
15 V
0.34 V
600 mA at 100 °C
125 °C
Common cathode
5 mJ
DESCRIPTION
The VS-MBR40L15CW... center tap Schottky rectifier
module has been optimized for ultralow forward voltage
drop specifically for the OR-ing of parallel power supplies.
The proprietary barrier technology allows for reliable
operation up to 125 °C junction temperature. Typical
applications are in parallel switching power supplies,
converters, reverse battery protection, and redundant
power subsystems.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
20 A
pk
, T
J
= 125 °C (per leg, typical)
Range
CHARACTERISTICS
Rectangular waveform
VALUES
40
15
700
0.26
- 55 to 125
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse
voltage
Maximum working peak reverse
voltage
SYMBOL
V
R
V
RWM
TEST CONDITIONS
T
J
= 100 °C
VS-MBR40L15CWPbF
15
VS-MBR40L15CW-N3
15
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
See fig. 5
per leg
I
F(AV)
per device
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 2 A, L = 6 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated
load condition and with
rated V
RRM
applied
50 % duty cycle, at T
C
= 86 °C, rectangular waveform
40
A
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
700
330
5
2
mJ
A
SYMBOL
TEST CONDITIONS
VALUES
20
UNITS
Revision: 17-Jul-13
Document Number: 94297
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBR40L15CWPbF, VS-MBR40L15CW-N3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
20 A
Maximum forward
voltage
drop per leg
See fig. 1
V
FM (1)
40 A
20 A
40 A
Reverse leakage current per leg
See fig. 2
Threshold
voltage
Forward slope resistance
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum
voltage
rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
V
F(TO)
r
t
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 100 °C
T
J
= T
J
maximum
V
R
= 5 V
DC,
(test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package
body
Rated V
R
-
8
10 000
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
TYP.
-
-
0.26
0.37
-
-
MAX.
0.42
0.52
0.34
0.50
10
600
0.182
7.6
2000
-
mA
V
m
pF
nH
V/µs
V
UNITS
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per package
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
SYMBOL
T
J
T
Stg
DC operation
See fig. 4
DC operation
R
thCS
Mounting surface, smooth and greased
TEST CONDITIONS
VALUES
- 55 to 125
- 55 to 150
1.4
0.7
0.24
6
0.21
Non-lubricated threads
Case style TO-247AC (JEDEC)
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
R
thJC
Mounting torque
Marking device
MBR40L15CW
Revision: 17-Jul-13
Document Number: 94297
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBR40L15CWPbF, VS-MBR40L15CW-N3
www.vishay.com
Vishay Semiconductors
1000
1000
I
R
- Reverse Current (mA)
T
J
= 100 °C
100
I
F
- Instantaneous
Forward Current (A)
100
T
J
= 75 °C
10
T
J
= 50 °C
10
T
J
= 125 °C
T
J
= 75 °C
T
J
= 25 °C
T
J
= 25 °C
1
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1
0
3
6
9
12
15
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10 000
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
1000
100
0
5
10
15
20
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
P
DM
t
1
0.1
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
1
10
100
0.01
0.00001
0.0001
0.001
0.01
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 17-Jul-13
Document Number: 94297
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBR40L15CWPbF, VS-MBR40L15CW-N3
www.vishay.com
Vishay Semiconductors
14
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
Allowable Case Temperature (°C)
100
Average Power Loss (W)
95
90
85
80
75
70
12
10
8
Square wave (D = 0.50)
RMS limit
6
4
2
0
DC
0
5
10
15
20
25
0
5
10
15
20
30
35
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs. Average
Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
I
FSM
- Non-Repetitive Surge Current (A)
1000
At any rated load condition
and with rated V
RRM
applied
following surge
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
High-speed
switch
Freewheel
diode
40HFL40S02
+
V
d
= 25
V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
Revision: 17-Jul-13
Document Number: 94297
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBR40L15CWPbF, VS-MBR40L15CW-N3
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS- MBR
1
-
-
-
-
-
-
2
40
3
L
4
15
5
CW PbF
6
7
1
2
3
4
5
6
7
Vishay Semiconductors product
Schottky MBR series
Current rating (40 = 40 A)
L = Low forward voltage
Voltage rating (15 = 15 V)
Circuit configuration:
Center tap TO-247
Environmental digit
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free
-
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-MBR40L15CWPbF
VS-MBR40L15CW-N3
QUANTITY PER T/R
25
25
MINIMUM ORDER QUANTITY
500
500
PACKAGING DESCRIPTION
Antistatic plastic tube
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
TO-247AC PbF
TO-247AC -N3
www.vishay.com/doc?95542
www.vishay.com/doc?95226
www.vishay.com/doc?95007
Revision: 17-Jul-13
Document Number: 94297
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
京公网安备 11010802033920号
EEWORLD
