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IRF820S

Description
MOSFET N-Chan 500V 2.5 Amp
CategoryDiscrete semiconductor    The transistor   
File Size181KB,8 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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IRF820S Overview

MOSFET N-Chan 500V 2.5 Amp

IRF820S Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts4
Reach Compliance Codeunknown
Shell connectionDRAIN
ConfigurationSINGLE
Minimum drain-source breakdown voltage500 V
Maximum drain current (Abs) (ID)2.5 A
Maximum drain current (ID)2.5 A
Maximum drain-source on-resistance3 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)50 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
IRF820S, SiHF820S, IRF820L, SiHF820L
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
24
3.3
13
Single
D
FEATURES
500
3.0
I
2
PAK
(TO-262)
D
2
PAK
(TO-263)
Surface mount
Available in tape and reel
Available
Dynamic dV/dt rating
Repetitive avalanche rated
Available
Fast switching
Ease of paralleling
Simple drive requirements
Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
G
G
D
S
G
D
S
S
N-Channel MOSFET
Note
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D
2
PAK (TO-263) is a surface mount power package
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
2
PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
Lead (Pb)-free
Note
a. See device orientation.
D
2
PAK (TO-263)
SiHF820S-GE3
IRF820SPbF
D
2
PAK (TO-263)
SiHF820STRL-GE3
a
IRF820STRLPbF
a
D
2
PAK (TO-263)
SiHF820STRR-GE3
a
IRF820STRRPbF
a
I
2
PAK (TO-262)
SiHF820L-GE3
IRF820LPbF
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Linear Derating Factor (PCB
Avalanche Current
a
a
SYMBOL
V
DS
V
GS
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
I
D
I
DM
mount)
e
E
AS
I
AR
E
AR
T
C
= 25 °C
mount)
e
T
A
= 25 °C
P
D
dV/dt
T
J
, T
stg
for 10 s
d
LIMIT
500
± 20
2.5
1.6
8.0
0.40
0.025
210
2.5
5.0
50
3.1
3.5
-55 to +150
300
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
Single Pulse Avalanche Energy
b
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 60 mH, R
g
= 25
,
I
AS
= 2.5 A (see fig. 12).
c. I
SD
2.5 A, dI/dt
50 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
S15-1659-Rev. D, 20-Jul-15
Document Number: 91060
1
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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