8403613JA datasheet, PDF - EEWORLD Datasheet

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8403613JA: DescriptionSRAM 2Kx8 Async 5.0V Low Power SRAM; Categorystorage; File Size90KB，11 Pages; ManufacturerIDT (Integrated Device Technology, Inc.); Websitehttp://www.idt.com/

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8403613JA Overview

SRAM 2Kx8 Async 5.0V Low Power SRAM

8403613JA Parametric

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	IDT (Integrated Device Technology, Inc.)
Product Category	SRAM
Shipping Restrictions	This product may require additional documentation to export from the United States.
RoHS	N
Memory Size	16 kbit
Organization	2 k x 8
Access Time	70 ns
Interface Type	Parallel
Supply Voltage - Max	5.5 V
Supply Voltage - Min	4.5 V
Supply Current - Max	95 mA
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 125 C
Mounting Style	Through Hole
Package / Case	CDIP-24
Packaging	Tube
Height	2.9 mm
Length	32 mm
Memory Type	SDR
Type	Asynchronous
Width	15.24 mm
Number of Ports	1
Factory Pack Quantity	15

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CMOS Static RAM

16K (2K x 8-Bit)

Features

Description

IDT6116SA

IDT6116LA

◆

High-speed access and chip select times

– Military: 20/25/35/45/55/70/90/120/150ns (max.)

– Industrial: 20/25ns (max.)

– Commercial: 15/20/25ns (max.)

Low-power consumption

Battery backup operation

– 2V data retention voltage (LA version only)

Produced with advanced CMOS high-performance

technology

CMOS process virtually eliminates alpha particle soft-error

rates

Input and output directly TTL-compatible

Static operation: no clocks or refresh required

Available in ceramic 24-pin DIP, ceramic and plastic 24-pin Thin

Dip and 24-pin SOIC

Military product compliant to MIL-STD-833, Class B

The IDT6116SA/LA is a 16,384-bit high-speed static RAM organized

as 2K x 8. It is fabricated using high-performance, high-reliability CMOS

technology.

Access times as fast as 15ns are available. The circuit also offers a

reduced power standby mode. When

goes HIGH, the circuit will

automatically go to, and remain in, a standby power mode, as long as

remains HIGH. This capability provides significant system level power and

cooling savings. The low-power (LA) version also offers a battery backup

data retention capability where the circuit typically consumes only 1µW to

4µW operating off a 2V battery.

All inputs and outputs of the IDT6116SA/LA are TTL-compatible. Fully

static asynchronous circuitry is used, requiring no clocks or refreshing for

operation.

The IDT6116SA/LA is packaged in 24-pin 300mil plastic DIP, 24-pin

600mil and 300mil ceramic DIP, or 24-lead gull-wing SOIC providing high

board-level packing densities.

Military grade product is manufactured in compliance to MIL-STD-883,

Class B, making it ideally suited to military temperature applications

demanding the highest level of performance and reliability.

Functional Block Diagram

ADDRESS

DECODER

128 X 128

MEMORY

ARRAY

GND

I/O

INPUT

DATA

CIRCUIT

I/O

I/O CONTROL

CONTROL

CIRCUIT

3089 drw 01

FEBRUARY 2013

DSC-3089/08

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