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NSS20600CF8T1G

Description
Bipolar Transistors - BJT SBN BE CHIPFET
CategoryDiscrete semiconductor    The transistor   
File Size104KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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NSS20600CF8T1G Overview

Bipolar Transistors - BJT SBN BE CHIPFET

NSS20600CF8T1G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
package instructionLEAD FREE, CASE 1206A-03, 8 PIN
Contacts8
Manufacturer packaging code1206A-03
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)6 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
Minimum DC current gain (hFE)180
JESD-30 codeR-PDSO-N8
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals8
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)1.4 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Maximum off time (toff)650 ns
Maximum opening time (tons)370 ns
Base Number Matches1
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
CE(sat)
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
This is a Pb−Free Device
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Continuous
Collector Current
Peak
Electrostatic Discharge
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
ESD
Max
−20
−20
−7.0
−6.0
−7.0
Unit
Vdc
Vdc
Vdc
Adc
A
NSS20600CF8T1G
20 V, 7.0 A, Low V
CE(sat)
PNP Transistor
http://onsemi.com
−20
VOLTS, 7.0 AMPS
PNP LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
50 mW
COLLECTOR
1, 2, 3, 6, 7, 8
4
BASE
5
EMITTER
ChipFET]
CASE 1206A
STYLE 4
HBM Class 3B
MM Class C
MARKING DIAGRAM
VC M
G
VC = Specific Device Code
M = Date Code
G
= Pb−Free Package
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation, T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation, T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Thermal Resistance,
Junction−to−Lead #1
Total Device Dissipation
(Single Pulse < 10 sec)
Junction and Storage
Temperature Range
Symbol
P
D
(Note 1)
R
qJA
(Note 1)
P
D
(Note 2)
R
qJA
(Note 2)
R
qJL
(Note 2)
P
Dsingle
(Notes 2 & 3)
T
J
, T
stg
Max
830
6.7
150
1.4
11.1
90
15
2.75
−55
to
+150
Unit
mW
mW/°C
°C/W
W
mW/°C
°C/W
C 8
°C/W
W
°C
C 7
C 6
E 5
PIN CONNECTIONS
1 C
2 C
3 C
4 B
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ 100 mm
2
, 1 oz copper traces.
2. FR−4 @ 500 mm
2
, 1 oz copper traces.
3. Thermal response.
ORDERING INFORMATION
Device
NSS20600CF8T1G
Package
ChipFET
(Pb−Free)
Shipping
3000/
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2007
March, 2007
Rev. 1
1
Publication Order Number:
NSS20600CF8/D
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