TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/255
DEVICES
LEVELS
2N2221A
2N2221AL
2N2221AUA
2N2221AUB
2N2221AUBC *
*
Available to JANS quality level only.
2N2222A
2N2222AL
2N2222AUA
2N2222AUB
2N2222AUBC *
JAN
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ T
A
= +25°C
Operating & Storage Junction Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
T
op
, T
stg
Value
50
75
6.0
800
0.5
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
W
°C
TO-18 (TO-206AA)
2N2221A, 2N2222A
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Symbol
Max.
325
210
325
Unit
°C/W
Thermal Resistance, Junction-to-Ambient
2N2221A, L
2N2222A, L
R
θJA
2N2221AUA
2N2222AUA
2N2221AUB, UBC
2N2222AUB, UBC
Note:
Consult 19500/255 for thermal performance curves.
1. Derate linearly 3.08mW/°C above T
A
> +37.5°C
4 PIN
2N2221AUA, 2N2222AUA
2.
Derate linearly 4.76mW/°C above T
A
> +63.5°C
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 10mAdc
Collector-Base Cutoff Current
V
CB
= 75Vdc
V
CB
= 60Vdc
Emitter-Base Cutoff Current
V
EB
= 6.0Vdc
V
EB
= 4.0Vdc
Collector-Emitter Cutoff Current
V
CE
= 50Vdc
T4-LDS-0060 Rev. 2 (100247)
V
(BR)CEO
I
CBO
50
10
10
10
10
50
Vdc
μAdc
ηAdc
μAdc
ηAdc
ηAdc
Symbol
Min.
Max.
Unit
3 PIN
2N2221AUB, 2N2222AUB
2N2221AUBC, 2N2222AUBC
(UBC = Ceramic Lid Version)
I
EBO
I
CES
Page 1 of 6
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
ON CHARACTERISTICS
(2)
Forward-Current Transfer Ratio
I
C
= 0.1mAdc, V
CE
= 10Vdc
2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC
2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC
2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC
2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC
2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC
V
CE(sat)
h
FE
30
50
35
75
40
100
40
100
20
30
0.3
1.0
0.6
1.2
2.0
Max.
Vdc
120
300
150
325
Symbol
Min.
Max.
Unit
I
C
= 1.0mAdc, V
CE
= 10Vdc
I
C
= 10mAdc, V
CE
= 10Vdc
I
C
= 150mAdc, V
CE
= 10Vdc
I
C
= 500mAdc, V
CE
= 10Vdc
Collector-Emitter Saturation Voltage
I
C
= 150mAdc, I
B
= 15mAdc
I
C
= 500mAdc, I
B
= 50mAdc
Base-Emitter Voltage
I
C
= 150mAdc, I
B
= 15mAdc
I
C
= 500mAdc, I
B
= 50mAdc
V
BE(sat)
Vdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Small-Signal Short-Circuit Forward Current Transfer Ratio
I
C
= 1.0mAdc, V
CE
= 10Vdc, f = 1.0kHz
2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC
Magnitude of Small–Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 20mAdc, V
CE
= 20Vdc, f = 100MHz
Output Capacitance
V
CB
= 10Vdc, I
E
= 0, 100kHz
≤
f
≤
1.0MHz
Input Capacitance
V
EB
= 0.5Vdc, I
C
= 0, 100kHz
≤
f
≤
1.0MHz
C
ibo
25
pF
C
obo
8.0
pF
Symbol
h
fe
Min.
30
50
Unit
|h
fe
|
2.5
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Time
See figure 8 of MIL-PRF-19500/255
Turn-Off Time
See Figure 9 of MIL-PRF-19500/255
(2) Pulse Test: Pulse Width = 300μs, Duty Cycle
≤
2.0%.
Symbol
t
on
t
off
Min.
Max.
35
300
Unit
ηs
ηs
T4-LDS-0060 Rev. 2 (100247)
Page 2 of 6
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Beyond r (radius) maximum, TL shall be held for a minimum length
of .011 inch (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm)
below seating plane shall be within .007 inch (0.18 mm) radius of
true position (TP) at maximum material condition (MMC) relative to
tab at MMC.
7. Dimension LU applies between L
1
and L
2
. Dimension LD applies
between L
2
and LL minimum. Diameter is uncontrolled in L
1
and
beyond LL minimum.
8. All three leads.
9. The collector shall be internally connected to the case.
10. Dimension r (radius) applies to both inside corners of tab.
11. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
12. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
13. For L suffix devices, dimension LL = 1.5 inches (38.10 mm) min.
and 1.75 inches (44.45 mm) max.
Symbol
CD
CH
HD
LC
LD
LL
LU
L
1
L
2
P
Q
TL
TW
r
α
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.178
.195
4.52
4.95
.170
.210
4.32
5.33
.209
.230
5.31
5.84
.100 TP
2.54 TP
.016
.021
0.41
0.53
.500
.750
12.70 19.05
.016
.019
0.41
0.48
.050
1.27
.250
6.35
.100
2.54
.030
0.76
.028
.048
0.71
1.22
.036
.046
0.91
1.17
.010
0.25
45° TP
45° TP
1, 2, 9, 11, 12, 13
Note
6
7,8
7,8,13
7,8
7,8
7,8
5
3,4
3
10
6
FIGURE 1. Physical dimensions (similar to TO-18).
T4-LDS-0060 Rev. 2 (100247)
Page 3 of 6
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Dimension CH controls the overall package thickness. When a
window lid is used, dimension CH must increase by a minimum of
.010 inch (0.254 mm) and a maximum of .040 inch (1.020 mm).
4. The corner shape (square, notch, radius) may vary at the
manufacturer's option, from that shown on the drawing.
5. Dimensions LW2 minimum and L3 minimum and the appropriate
castellation length define an unobstructed three-dimensional space
traversing all of the ceramic layers in which a castellation was
designed. (Castellations are required on the bottom two layers,
optional on the top ceramic layer.) Dimension LW2 maximum and
L3 maximum define the maximum width and depth of the
castellation at any point on its surface. Measurement of these
dimensions may be made prior to solder dipping.
6. The co-planarity deviation of all terminal contact points, as defined
by the device seating plane, shall not exceed .006 inch (0.15mm) for
solder dipped leadless chip carriers.
7. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
Symbol
BL
BL2
BW
BW2
CH
L3
LH
LL1
LL2
LS
LW
LW2
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.215
.225
5.46
5.71
.225
5.71
.145
.155
3.68
3.93
.155
3.93
.061
.075
1.55
1.90
.003
.007
0.08
0.18
.029
.042
0.74
1.07
.032
.048
0.81
1.22
.072
.088
1.83
2.23
.045
.055
1.14
1.39
.022
.028
0.56
0.71
.006
.022
0.15
0.56
Note
3
5
5
Pin no.
Transistor
1
Collector
2
Emitter
3
Base
4
N/C
FIGURE 2. Physical dimensions, surface mount (UA version).
T4-LDS-0060 Rev. 2 (100247)
Page 4 of 6
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
UB
Symbol
BH
BL
BW
CL
CW
LL1
LL2
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.046
.056
1.17
1.42
.115
.128
2.92
3.25
.085
.108
2.16
2.74
.128
3.25
.108
2.74
.022
.038
0.56
0.96
.017
.035
0.43
0.89
Note
Symbol
LS
1
LS
2
LW
r
r
1
r
2
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.036
.040
0.91
1.02
.071
.079
1.81
2.01
.016
.024
0.41
0.61
.008
.203
.012
.305
.022
.559
Note
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Hatched areas on package denote metalized areas.
4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.
5. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
FIGURE 3. Physical dimensions, surface mount (UB version)
T4-LDS-0060 Rev. 2 (100247)
Page 5 of 6
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