SOT223 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 FEBRUARY 1996
FEATURES
* High V
CEO
350V
* Low saturation voltage
COMPLEMENTARY TYPE
PARTMARKING DETAIL
BSP16
BSP19
C
BSP19
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
400
350
5
1
0.5
2
-55 to +150
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
MIN.
400
350
5
20
0.1
0.5
1.3
40
50
70
10
MHz
pF
TYP.
MAX.
UNIT
CONDITIONS.
I
C
=100
µ
A
I
C
=10mA*
I
E
=100
µ
A
V
CB
=300V
V
EB
=3V
I
C
=50mA, I
B
=4mA*
I
C
=50mA, I
B
=4mA*
I
C
=20mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
I
C
=10mA, V
CE
=10V
f = 20MHz
V
CB
=20V, f=1MHz
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
V
V
V
nA
µ
A
Emitter Cut-Off Current I
EBO
V
CE(sat)
V
BE(sat)
V
V
Static Forward Current h
FE
Transfer Ratio
Transition Frequency
Output Capacitance
f
T
C
obo
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
For typical characteristics graphs see FZT658 datasheet.
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