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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
BC847BV
NPN general purpose double
transistor
Product data sheet
2001 Sep 10
NXP Semiconductors
Product data sheet
NPN general purpose double transistor
FEATURES
•
300 mW total power dissipation
•
Very small 1.6 mm
×
1.2 mm
×
0.55 mm ultra thin
package
•
Excellent coplanarity due to straight leads
•
Low collector capacitance
•
Improved thermal behaviour due to flat leads
•
Reduces number of components as replacement of two
SC-75/SC-89 packaged BISS transistors
•
Reduces required board space
•
Reduces pick and place costs.
APPLICATIONS
•
General purpose switching and amplification.
DESCRIPTION
NPN double transistor in a SOT666 plastic package.
PNP complement: BC857BV.
MARKING
TYPE NUMBER
BC847BV
MARKING CODE
1F
1
Top view
2
3
MAM447
BC847BV
PINNING
PIN
1, 4
2, 5
6, 3
emitter
base
collector
DESCRIPTION
TR1; TR2
TR1; TR2
TR1; TR2
handbook, halfpage
6
5
4
6
5
4
TR2
TR1
1
2
3
Fig.1 Simplified outline (SOT666) and symbol.
2001 Sep 10
2
NXP Semiconductors
Product data sheet
NPN general purpose double transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per transistor
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Per device
P
tot
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
notes 1 and 2
VALUE
416
total power dissipation
T
amb
≤
25
°C;
note 1
−
300
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
50
45
5
100
200
200
200
PARAMETER
CONDITIONS
MIN.
BC847BV
MAX.
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
+150
150
+150
mW
UNIT
K/W
2001 Sep 10
3
NXP Semiconductors
Product data sheet
NPN general purpose double transistor
CHARACTERISTICS
T
amb
= 25
°C;
unless otherwise specified.
SYMBOL
Per transistor
I
CBO
I
EBO
h
FE
V
BE
V
CEsat
V
BEsat
C
c
C
e
f
T
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
collector-base cut-off current
emitter-base cut-off current
DC current gain
base-emitter voltage
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
I
E
= 0; V
CB
= 30 V
I
E
= 0; V
CB
= 30 V; T
j
= 150
°C
I
C
= 0; V
EB
= 5 V
I
C
= 2 mA; V
CE
= 5 V
I
C
= 2 mA; V
CE
= 5 V
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA; note 1
I
C
= 10 mA; I
B
= 0.5 mA
I
E
= I
e
= 0; V
CB
= 10 V; f = 1 MHz
−
−
−
200
580
−
−
−
−
−
−
−
−
655
−
−
755
−
11
−
PARAMETER
CONDITIONS
MIN.
TYP.
BC847BV
MAX.
UNIT
15
5
100
450
700
100
300
−
1.5
−
−
nA
μA
nA
mV
mV
mV
mV
pF
pF
MHz
I
C
= i
c
= 0; V
EB
= 500 mV;f = 1 MHz
−
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz 100
handbook, full pagewidth
300
MBH724
hFE
VCE = 5 V
200
100
0
10
−2
10
−1
1
10
10
2
IC (mA)
10
3
Fig.2 DC current gain; typical values.
2001 Sep 10
4
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