2N4918 - 2N4920 Series
Medium-Power Plastic PNP
Silicon Transistors
These medium−power, high−performance plastic devices are
designed for driver circuits, switching, and amplifier applications.
Features
http://onsemi.com
•
•
•
•
•
•
Low Saturation Voltage
−
V
CE(sat)
= 0.6 Vdc (Max) @ I
C
= 1.0 A
Excellent Power Dissipation, P
D
= 30 W @ T
C
= 25_C
Excellent Safe Operating Area
Gain Specified to I
C
= 1.0 A
Complement to NPN 2N4921, 2N4922, 2N4923
Pb−Free Package is Available*
3.0 A, 40−80 V, 30 W
GENERAL PURPOSE
POWER TRANSISTORS
MAXIMUM RATINGS
Rating
Collector
−
Emitter Voltage
2N4918
2N4919
2N4920
Collector
−
Base Voltage
2N4918
2N4919
2N4920
Emitter
−
Base Voltage
Collector Current
−
Continuous
(Note 1)
Base Current
Total Power Dissipation @ T
A
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
Value
40
60
80
Vdc
40
60
80
5.0
1.0
3.0
1.0
30
0.24
−65
to +150
Vdc
Adc
Adc
W
W/°C
°C
xx
Y
WW
Unit
Vdc
1 2
3
FRONT VIEW
3 2
1
4
V
CBO
BACK VIEW
V
EBO
I
C
(Note 2)
I
B
P
D
T
J
, T
stg
TO−225
CASE 077
STYLE 1
MARKING DIAGRAM
YWW
2N
49xx
= 18, 19, 20
= Year
= Work Week
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
1. The 1.0 A max I
C
value is based upon JEDEC current gain requirements. The
3.0 A max value is based upon actual current−handling capability of the
device (See Figure 5).
2. Indicates JEDEC Registered Data for 2N4918 Series.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
THERMAL CHARACTERISTICS
(Note 3)
Characteristic
Thermal Resistance,
Junction−to−Case
Symbol
qJC
Max
4.16
Unit
°C/W
3. Recommend use of thermal compound for lowest thermal resistance.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2004
January, 2017
−
Rev. 12
1
Publication Order Number:
2N4918/D
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4. Pulse Test: PW
[
300
ms,
Duty Cycle
[
2.0%
SMALL−SIGNAL CHARACTERISTICS
ON CHARACTERISTICS
OFF CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise noted)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi-
cations Brochure, BRD8011/D.
ORDERING INFORMATION
2N4920G
2N4920
2N4919
2N4918
Small−Signal Current Gain (I
C
= 250 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
Output Capacitance (V
CB
= 10 Vdc, I
E
= 0, f = 100 kHz)
Current−Gain
−
Bandwidth Product (I
C
= 250 mAdc, V
CE
= 10 Vdc, f = 1.0 MHz)
Base−Emitter On Voltage (Note 4)
(I
C
= 1.0 Adc, V
CE
= 1.0 Vdc)
Base−Emitter Saturation Voltage (Note 4)
(I
C
= 1.0 Adc, I
B
= 0.1 Adc)
Collector−Emitter Saturation Voltage (Note 4)
(I
C
= 1.0 Adc, I
B
= 0.1 Adc)
DC Current Gain (Note 4)
(I
C
= 50 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 500 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 1.0 Adc, V
CE
= 1.0 Vdc)
Emitter Cutoff Current
(V
BE
= 5.0 Vdc, I
C
= 0)
Collector Cutoff Current
(V
CB
= Rated V
CB
, I
E
= 0)
Collector Cutoff Current
(V
CE
= Rated V
CEO
, V
BE(off)
= 1.5 Vdc)
(V
CE
= Rated V
CEO
, V
BE(off)
= 1.5 Vdc, T
C
= 125_C
Collector Cutoff Current
(V
CE
= 20 Vdc, I
B
= 0)
(V
CE
= 30 Vdc, I
B
= 0)
(V
CE
= 40 Vdc, I
B
= 0)
Collector−Emitter Sustaining Voltage (Note 4)
(I
C
= 0.1 Adc, I
B
= 0)
Device
Characteristic
2N4918
−
2N4920 Series
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TO−225
(Pb−Free)
Package
TO−225
TO−225
TO−225
2N4918
2N4919
2N4920
2N4918
2N4919
2N4920
V
CEO(sus)
Symbol
V
CE(sat)
V
BE(sat)
V
BE(on)
I
CBO
I
CEO
I
EBO
I
CEX
C
ob
h
FE
h
fe
f
T
500 Unit / Bulk
500 Unit / Bulk
500 Unit / Bulk
500 Unit / Bulk
Shipping
†
Min
3.0
25
40
30
10
40
60
80
−
−
−
−
−
−
−
−
−
−
−
Max
−
150
−
100
1.3
1.3
0.6
1.0
0.1
0.1
0.5
0.5
0.5
0.5
−
−
−
−
−
mAdc
mAdc
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
pF
−
−
2
2N4918
−
2N4920 Series
40
PD, POWER DISSIPATION (WATTS)
30
20
10
0
25
50
75
100
T
C
, CASE TEMPERATURE (°C)
125
150
Figure 1. Power Derating
V
BE(off)
V
in
0
V
CC
V
in
R
C
R
B
SCOPE
t, TIME (
μ
s)
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
V
CC
= 30 V
I
C
/I
B
= 20
I
C
/I
B
= 10, UNLESS NOTED
T
J
= 25°C
T
J
= 150°C
APPROX
-11 V
t
1
C
jd
<< C
eb
t
2
V
in
APPROX
-11 V
0
t
1
< 15 ns
100 < t
2
< 500
ms
t
3
< 15 ns
t
3
TURN-OFF PULSE
DUTY CYCLE
≈
2.0%
APPROX 9.0 V
+ 4.0 V
R
B
and R
C
varied to
obtain desired
current levels
V
CC
= 30 V
t
r
V
CC
= 60 V
t
d
V
CC
= 60 V
V
BE(off)
= 2.0 V
V
CC
= 30 V
V
BE(off)
= 0
10
20
30
50 70 100
200 300
I
C
, COLLECTOR CURRENT (mA)
500 700 1000
Figure 2. Switching Time Equivalent Test Circuit
Figure 3. Turn−On Time
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3
2N4918
−
2N4920 Series
1.0
0.7
0.5
0.3
0.2
0.1
0.05
0.01
SINGLE PULSE
P
(pk)
q
JC
(t) = r(t)
q
JC
q
JC
= 4.16°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t
1
READ TIME AT t
1
t
2
T
J(pk)
- T
C
= P
(pk)
q
JC
(t)
DUTY CYCLE, D = t
1
/t
2
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
D = 0.5
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
t, TIME (ms)
10
20
30
50
100
200 300
500
1000
Figure 4. Thermal Response
10
IC, COLLECTOR CURRENT (AMP)
5.0 ms
T
J
= 150°C
dc
1.0
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMIT @ T
C
= 25°C
PULSE CURVES APPLY BELOW
RATED V
CEO
2.0 3.0
5.0 7.0 10
20 30
50
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
70 100
1.0 ms
100
ms
5.0
2.0
0.5
0.2
0.1
1.0
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
−
V
CE
operation i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 150_C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
v
150_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
Figure 5. Active−Region Safe Operating Area
5.0
3.0
2.0
t s
′
, STORAGE TIME (
μ
s)
1.0
0.7
0.5
0.3
0.2
t
s
′
= t
s
- 1/8 t
f
T
J
= 25°C
T
J
= 150°C
I
B1
= I
B2
10
20
30
200 300
50 70 100
I
C
, COLLECTOR CURRENT (mA)
500 700 1000
I
C
/I
B
= 10
I
C
/I
B
= 20
5.0
3.0
2.0
t f , FALL TIME (
μ
s)
1.0
0.7
0.5
0.3
0.2
I
C
/I
B
= 10
I
C
/I
B
= 20
T
J
= 25°C
T
J
= 150°C
V
CC
= 30 V
I
B1
= I
B2
0.1
0.07
0.05
0.1
0.07
0.05
10
20
30
50 70 100
200 300
I
C
, COLLECTOR CURRENT (mA)
500 700 1000
Figure 6. Storage Time
Figure 7. Fall Time
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4
2N4918
−
2N4920 Series
TYPICAL DC CHARACTERISTICS
1000
700
500
hFE, DC CURRENT GAIN
300
200
100
70
50
30
20
10
2.0 3.0 5.0
25°C
- 55°C
T
J
= 150°C
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0
I
C
= 0.1 A
0.8
0.25 A
0.5 A
1.0 A
V
CE
= 1.0 V
0.6
T
J
= 25°C
0.4
0.2
10
20 30 50 100 200 300 500
I
C
, COLLECTOR CURRENT (mA)
1000 2000
0
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10 20 30
I
B
, BASE CURRENT (mA)
50
100
200
Figure 8. Current Gain
RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS)
Figure 9. Collector Saturation Region
10
8
I
C
= 10 I
CES
10
7
VOLTAGE (VOLTS)
V
CE
= 30 V
1.5
1.2
T
J
= 25°C
10
6
I
C
≈
I
CES
I
C
= 2x I
CES
I
CES
VALUES
OBTAINED FROM
FIGURE 13
0
30
60
90
120
150
0.9
V
BE(sat)
@ I
C
/I
B
= 10
0.6
V
BE
@ V
CE
= 2.0 V
0.3
V
CE(sat)
@ I
C
/I
B
= 10
10
5
10
4
10
3
0
2.0 3.0 5.0
10
20 30
50
100
200 300 500 1000 2000
T
J
, JUNCTION TEMPERATURE (°C)
I
C
, COLLECTOR CURRENT (mA)
Figure 10. Effects of Base−Emitter Resistance
Figure 11. “On” Voltage
10
2
TEMPERATURE COEFFICIENTS (mV/
°
C)
IC, COLLECTOR CURRENT (
μ
A)
10
1
T
J
= 150°C
10
0
10
-1
100°C
10
- 2
10
4
REVERSE
10
3
- 0.2
- 0.1
25°C
FORWARD
0
+ 0.1
+ 0.2
I
C
= I
CES
V
CE
= 30 V
+ 2.5
+ 2.0
+ 1.5
+ 1.0
+ 0.5
0
- 0.5
- 1.0
- 1.5
- 2.0
- 2.5
2.0 3.0 5.0
q
VB
FOR V
BE
10
20 30
50
100 200 300 500
1000 2000
*q
VC
FOR V
CE(sat)
T
J
= - 55°C to +100°C
*APPLIES FOR I
C
/I
B
<
hFE @ VCE
+
1.0 V
2
T
J
= 100°C to 150°C
+ 0.3
+ 0.4
+ 0.5
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
Figure 12. Collector Cut−Off Region
Figure 13. Temperature Coefficients
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