®
BU508DFI
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
s
s
s
STMicroelectronics PREFERRED
SALESTYPE
HIGH VOLTAGE CAPABILITY ( > 1500 V )
NPN TRANSISTOR WITH INTEGRATED
FREEWHEELING DIODE
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
APPLICATIONS:
s
HORIZONTAL DEFLECTION FOR COLOUR
TV UP TO 25"
DESCRIPTION
The
BU508DFI
is
manufactured
using
Multiepitaxial Mesa technology for cost-effective
high performance and uses a Hollow Emitter
structure to enhance switching speeds.
-
et
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u
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P
t(
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P
b
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ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
V
isol
T
stg
T
j
Parameter
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Base Peak Current (t
p
< 5 ms)
Total Dissipation at T
c
= 25
o
C
Insulation Withstand Voltage (RMS) from All
Three Leads to Exernal Heatsink
Storage Temperature
Max. Operating Junction Temperature
b
O
so
t
le
P
e
ro
uc
d
3
2
1
s)
t(
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
P
e
od
r
s)
t(
uc
Value
1500
700
10
8
15
5
8
50
2500
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
V
o
o
C
C
April 2002
1/6
BU508DFI
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case
Max
2.5
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CES
I
EBO
Parameter
Collector Cut-off
Current (V
BE
= 0)
Emitter Cut-off Current
(I
C
= 0)
Test Conditions
V
CE
= 1500 V
V
CE
= 1500 V
V
EB
= 5 V
I
C
= 100 m A
700
T
j
= 125 C
o
Min.
Typ.
Max.
1
2
300
Unit
mA
mA
mA
V
V
CEO(sus)
∗
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
CE(sat)
∗
V
BE(sat)
∗
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
INDUCTIVE LOAD
Storage Time
Fall Time
I
C
= 4.5 A
I
C
= 4.5 A
I
B
= 2 A
I
B
= 2 A
t
s
t
f
V
F
f
T
I
C
= 4.5 A h
FE
= 2.5 V
CC
= 140 V
L
C
= 0.9 mH L
B
= 3
µH
(see figure 1)
I
C
= 0.1 A
V
CE
= 5 V
Diode Forward Voltage I
F
= 4 A
Transition Frequency
∗
Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
ro
s)
P
t(
te
uc
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o
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r
s
P
b
O
te
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so
b
O
Safe Operating Area
uc
d
s)
t(
O
-
so
b
f = 5 MHz
te
le
ro
P
uc
d
1
2
s)
t(
V
V
µs
ns
V
so
b
-O
te
le
r
P
od
7
7
550
s)
t(
uc
MHz
1.3
Thermal Impedance
2/6
BU508DFI
Derating Curve
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
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et
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)
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so
b
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P
t(
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od
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s
P
b
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te
le
so
b
O
Switching Time Inductive Load
b
O
so
te
le
ro
P
uc
d
s)
t(
P
e
od
r
s)
t(
uc
Switching Time Inductive Load
3/6
BU508DFI
ISOWATT218 MECHANICAL DATA
DIM.
A
C
D
D1
E
F
F2
F3
G
H
L
L1
L2
L3
L4
L5
L6
N
R
DIA
mm
TYP.
inch
TYP.
MIN.
5.35
3.30
2.90
1.88
0.75
1.05
1.50
1.90
10.80
15.80
20.80
19.10
22.80
40.50
4.85
20.25
2.1
MAX.
5.65
3.80
3.10
2.08
0.95
1.25
1.70
2.10
11.20
16.20
21.20
19.90
23.60
42.50
5.25
20.75
2.3
MIN.
0.211
0.130
0.114
0.074
0.030
0.041
0.059
0.075
0.425
0.622
0.819
0.752
0.898
1.594
0.191
0.797
0.083
9
)-
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
4.6
3.5
3.7
b
O
so
te
le
ro
P
0.354
uc
d
s)
t(
0.835
0.783
0.929
1.673
0.207
0.817
0.091
MAX.
0.222
0.150
0.122
0.082
0.037
0.049
0.067
0.083
0.441
0.638
0.138
et
l
P
e
od
r
s)
t(
uc
0.146
0.181
- Weight : 4.9 g (typ.)
- Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm
- The side of the dissipator must be flat within 80
µm
P025C/A
5/6
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