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IRF7471PBF

Description
MOSFET 40V 1 N-CH HEXFET 13mOhms 21nC
Categorysemiconductor    Discrete semiconductor   
File Size218KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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IRF7471PBF Overview

MOSFET 40V 1 N-CH HEXFET 13mOhms 21nC

IRF7471PBF Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerInfineon
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSO-8
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage40 V
Id - Continuous Drain Current10 A
Rds On - Drain-Source Resistance16 mOhms
Vgs - Gate-Source Voltage20 V
Qg - Gate Charge21 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle Quad Drain Triple Source
Pd - Power Dissipation2.5 W
Channel ModeEnhancement
PackagingTube
Height1.75 mm
Length4.9 mm
Transistor Type1 N-Channel
TypeSmps MOSFET
Width3.9 mm
Fall Time4.1 ns
Rise Time2.7 ns
Factory Pack Quantity4085
Typical Turn-Off Delay Time15 ns
Typical Turn-On Delay Time12 ns
Unit Weight0.019048 oz
PD- 94036B
SMPS MOSFET
Applications
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l
High Frequency Buck Converters for
Computer Processor Power
Benefits
l
Ultra-Low Gate Impedance
l
Very Low R
DS(on)
l
Fully Characterized Avalanche Voltage
and Current
IRF7471
HEXFET
®
Power MOSFET
V
DSS
40V
R
DS(on)
max
13mΩ
I
D
10A
S
S
S
G
1
8
7
A
A
D
D
D
D
2
3
6
4
5
T o p V ie w
SO-8
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
, T
STG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current

Maximum Power Dissipation
ƒ
Maximum Power Dissipation
ƒ
Linear Derating Factor
Junction and Storage Temperature Range
Max.
40
± 20
10
8.3
83
2.5
1.6
0.02
-55 to + 150
Units
V
V
A
W
W
mW/°C
°C
Thermal Resistance
Symbol
R
θJL
R
θJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
„
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes

through
„
are on page 8
www.irf.com
1
3/25/01
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