HITFET® BSP 75
Smart Lowside Power Switch
Features
•
Logic Level Input
•
Input protection (ESD)
•
Thermal shutdown (with restart)
•
Overload protection
•
Short circuit protection
•
Overvoltage protection
•
Current limitation
Product Summary
Continuous drain source voltage
On-state resistance
Current limitation
Nominal load current
Clamping energy
V
DS
R
DS(ON)
I
D(lim)
I
D(Nom)
E
AS
55
550
1
0.7
550
V
mΩ
A
A
mJ
Application
•
All kinds of resistive, inductive and capacitive loads in switching applications
• µC
compatible power switch for 12 V and 24 V DC applications
•
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in
Smart Power Technology.
Fully protected by embedded protection functions.
V bb
+
LOAD
M
Drain
2
Overvoltage
protection
1
IN
dv/dt
limitation
Short circuit
protection
Short circuit
Current
protection
limitation
Source
ESD
Over-
temperature
protection
3
4
®
HITFET
Pin
1
2
3
TAB
Symbol
IN
DRAIN
SOURCE
SUBSTRATE
Function
Input
Output to the load
Ground
Must be connected to Pin 3
Semiconductor Group
Page 1 of 9
1998-02-04
HITFET® BSP 75
Maximum Ratings at Tj=25°C unless otherwise specified
Parameter
Continuous drain source voltage
(overvoltage protection see page 4)
Drain source voltage for
short circuit protection
Load dump protection
V
LoadDump
=U
P
+U
S
;
U
P
=13.5 V
R
I1
)
=2
Ω;
t
d
=400ms; IN=low or high (8V)
R
L
=50
Ω
R
I
=2
Ω;
t
d
=400ms; IN=high (8V)
R
L
=22
Ω
Continuous input voltage
Peak input voltage
Operating temperature range
Storage temperature range
Power dissipation (DC)
Unclamped single pulse inductive energy
I
D(ISO)
= 0.7 A
Electrostatic discharge
voltage (Human Body Model)
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Thermal resistance
junction soldering point:
junction - ambient
3
)
:
Symbol
V
DS
Values
55
32
Unit
V
V
V
80
47
-0.2 ... +10
-0.2 ... +20
-40 ...+150
-55 ...+150
1.8
550
4000
V
DS
V
LoadDump2
)
V
IN
V
IN
T
j
T
stg
P
tot
E
AS
V
ESD
V
V
°C
W
mJ
V
E
40/150/56
R
thJS
R
thJA
≤10
≤70
K/W
1
)
2
)
R
I
=internal resistance of the load dump test pulse generator LD200
V
LoadDump
is setup without DUT connected to the generator per ISO 7637-1 and DIN 40 839.
3
)
Device on epoxy pcb 40mm x 40 mm x 1.5mm with 6cm
2
copper area for pin 4 connection
Semiconductor Group
Page 2
1998-02-04
HITFET® BSP 75
Electrical Characteristics
Parameter and Conditions
at T
j
= 25 °C, unless otherwise specified
Symbol
Values
min
typ
max
Unit
Static Characteristics
Drain source clamp voltage
I
D
= 10 mA
T
j
=-40...+150°C:
Off state drain current
V
IN
= 0 V,
V
DS
= 32 V
T
j
=-40...+150°C:
Input threshold voltage
I
D
= 10 mA
Input current
normal operation,
I
D<
I
D(lim)
:
V
IN
= 5 V
current limitation mode,
I
D
=I
D(lim)
:
after thermal shutdown,
I
D
=0 A:
On-state resistance
I
D
= 0.7 A, V
IN
= 5 V
T
j
=25°C:
T
j
=150°C:
On-state resistance
I
D
= 0.7 A, V
IN
= 10 V
T
j
=25°C:
T
j
=150°C:
Nominal load current
V
BB
= 12 V,
V
DS
= 0.5 V,
T
S
= 85°C
T
j
< 150°C
Current limit
V
IN
= 10 V,
V
DS
= 12 V
Dynamic characteristics
Turn-on time
V
IN
to 90%
I
D
:
R
L
= 22
Ω,
V
IN
= 0 to 10 V, V
bb
= 12 V
Turn-off time
V
IN
to 10%
I
D
:
R
L
= 22
Ω,
V
IN
= 10 to 0 V, V
bb
= 12 V
Slew rate on
70 to 50% V
bb
:
R
L
= 22
Ω,
V
IN
= 0 to 10 V, V
bb
= 12 V
Slew rate off
50 to 70% V
bb
:
R
L
= 22
Ω,
V
IN
= 10 to 0 V, V
bb
= 12 V
V
DS(AZ)
I
DSS
V
IN(th)
I
IN(1)
I
IN(2)
I
IN(3)
R
DS(on)
55
--
2
--
--
1000
--
--
--
--
0.7
--
--
2.5
100
200
1500
550
850
475
750
--
70
5
3
200
300
2000
675
1350
550
1000
--
V
µA
V
µA
mΩ
R
DS(on)
I
D(Nom)
mΩ
A
I
D(lim)
1
1.5
1.9
A
t
on
t
off
-d
V
DS
/dt
on
d
V
DS
/dt
off
--
--
--
--
10
10
4
4
20
20
10
10
µs
µs
V/µs
V/µs
Semiconductor Group
Page 3
1998-02-04
HITFET® BSP 75
Parameter and Conditions
at T
j
= 25 °C, unless otherwise specified
Symbol
Values
min
typ
max
Unit
Protection Functions
Thermal overload trip temperature
T
jt
Thermal hysteresis
∆
T
jt
Unclamped single pulse inductive energy
I
D(ISO)
=0.7 A, V
bb
=32 V
Tj=25 °C E
AS
Tj=150 °C
Inverse Diode
Continuous source drain voltage
V
IN
= 0 V,
-I
D
= 2*0.7 A
150
--
550
200
165
10
--
--
--
--
--
--
°C
K
mJ
V
SD
--
1
--
V
Circuit Description
The BSP 75 is a monolithic power switch in Smart Power Technology (SPT) with a logic level
input, an open drain DMOS output stage and integrated protection functions. It is designed
for all kind of resistive and inductive loads (relays, solenoid) in automotive and industrial ap-
plications.
Protection functions
•
Overvoltage protection:
An internal clamp limits the output voltage at V
DS(AZ)
(about
63 V) when inductive loads are switched off.
•
Current limitation:
By means of an internal current measurement the drain current is lim-
ited at I
D(lim)
(1.4 - 1.5 A typ.). If the current limitation is active the device operates in the
linear region, so power dissipation may exceed the capability of the heatsink. This opera-
tion leads to an increasing junction temperature until the overtemperature threshold is
reached.
•
Overtemperature and short circuit protection:
This protection is based on sensing the
chip temperature. The location of the sensor ensures a fast and accurate junction tem-
perature detection. Overtemperature shutdown occurs at minimum 150 °C. A hysteresis of
typ. 10 K enables an automatical restart by cooling.
The device is ESD protected according Human Body Model (4 kV) and load dump protected
(see Maximum Ratings).
Semiconductor Group
Page 4
1998-02-04
HITFET® BSP 75
Block diagram
Terms
V
Z
Inductive and overvoltage output clamp
D
RL
S
I IN
1
IN
HITFET
S
VIN
3
2
D
ID
VDS
Vbb
HITFET
V
IN
Input circuit (ESD protection)
IN
V
DS
ESD-ZD
I
V
DS(AZ)
V
BB
Source
t
ESD zener diodes are not designed for DC
current.
Turn on into overload or short circuit
V
IN
I
D
I
D(lim)
t
Shut down by overtemperature and restart by
cooling. Current internally limited at I
D(lim)
.
Semiconductor Group
Page 5
1998-02-04
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