EEWORLDEEWORLDEEWORLD

Part Number

Search

BSM150GB120DN2

Description
IGBT Modules 1200V 150A DUAL
CategoryDiscrete semiconductor    The transistor   
File Size163KB,12 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

BSM150GB120DN2 Online Shopping

Suppliers Part Number Price MOQ In stock  
BSM150GB120DN2 - - View Buy Now

BSM150GB120DN2 Overview

IGBT Modules 1200V 150A DUAL

BSM150GB120DN2 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeMODULE
package instruction,
Contacts7
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Maximum collector current (IC)210 A
Collector-emitter maximum voltage1200 V
Gate-emitter maximum voltage20 V
Number of components1
Maximum operating temperature150 °C
Maximum power dissipation(Abs)1250 W
VCEsat-Max3.2 V
Base Number Matches1
BSM 150 GB 120 DN2
IGBT Power Module
• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type
BSM 150 GB 120 DN2
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
GE
= 20 kΩ
Gate-emitter voltage
DC collector current
T
C
= 25 °C
T
C
= 80 °C
V
CE
I
C
Package
HALF-BRIDGE 2
Ordering Code
C67076-A2108-A70
1200V 210A
Symbol
V
CE
V
CGR
Values
1200
1200
Unit
V
V
GE
I
C
± 20
A
210
150
Pulsed collector current,
t
p
= 1 ms
T
C
= 25 °C
T
C
= 80 °C
Power dissipation per IGBT
T
C
= 25 °C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage,
t
= 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
I
Cpuls
420
300
P
tot
1250
T
j
T
stg
R
thJC
R
thJCD
V
is
-
-
-
-
+ 150
-40 ... + 125
0.1
0.25
2500
20
11
F
40 / 125 / 56
sec
Vac
mm
K/W
°C
W
1
Oct-21-1997
I feel like I can't stay in this stupid company any longer.
[font=微软雅黑][size=3]I just graduated this year and joined my current company in October. When I first came in, within two days, they immediately gave me a project to do, and I was doing it all by mysel...
lingking Talking
TI High Power Density Solution Analysis!
The importance and value of power density in modern power delivery solutions cannot be ignored. In order to better understand the basic techniques of high power density design, in this article, four i...
qwqwqw2088 Energy Infrastructure?
Can the CH246 & CH241 wireless charging kit be used like this?
[i=s]This post was last edited by wangerxian on 2022-11-8 15:03[/i]The mobile phone does not have a wireless charging function. Without considering the size issue , is it feasible to use this kit to a...
buildele Power technology
25-Font 12864 LCD screen
25-Font 12864 LCD screen...
wangwei20060608 MCU
About ATMEGA16 PWM generation
I need to generate two PWM waves, both with a frequency of 100 Hz and different duty cycles. The main thing is to ensure that the phase difference between the two waveforms is always the same. The pha...
lc880331 Microchip MCU
Teach you how to learn the microcontroller experimental program step by step
[font=黑体][size=5][b][img]http://www.toopoo.com/book/tushu/81077-613-4.html[/img]Teach you how to learn the single chip microcomputer experimental program step by step[/b][/size][/font]...
wuqinyong MCU

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 317  1095  780  1813  1100  7  23  16  37  4 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号