The DG441B, DG442B are monolithic quad analog switches
designed to provide high speed, low error switching of
analog and audio signals. The DG441B, DG442B are
upgrades to the original DG441, DG442.
Combing low on-resistance (45
,
typ.) with high speed
(t
ON
120 ns, typ.), the DG441B, DG442B are ideally
suited for Data Acquisition, Communication Systems,
Automatic Test Equipment, or Medical Instrumentation.
Charge injection has been minimized on the drain for use in
sample-and-hold circuits.
The DG441B, DG442B are built using Vishay Siliconix’s
high-voltage silicon-gate process. An epitaxial layer prevents
latchup.
When on, each switch conducts equally well in both
directions and blocks input voltages to the supply levels
when off.
FEATURES
•
•
•
•
•
•
•
Low On-Resistance: 45
Low Power Consumption: 1 mW
Fast Switching Action - t
ON
: 120 ns
Low Charge Injection - Q:
-
1 pC
TTL/CMOS-Compatible Logic
Single Supply Capability
Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
Less Signal Errors and Distortion
Reduced Power Supply Requirements
Faster Throughput
Reduced Pedestal Errors
Simple Interfacing
Audio Switching
Data Acquisition
Sample-and-Hold Circuits
Communication Systems
Automatic Test Equipment
Medical Instruments
BENEFITS
•
•
•
•
•
•
•
•
•
•
•
APPLICATIONS
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG441B
Dual-In-Line and SOIC
IN
1
D
1
S
1
V-
GND
S
4
D
4
IN
4
1
2
3
4
5
6
7
8
Top View
16
15
14
13
12
11
10
9
IN
2
D
2
S
2
V+
NC
S
3
D
3
IN
3
TRUTH TABLE
Logic
0
1
Logic "0"
0.8
V
Logic "1"
2.4
V
DG441B
ON
OFF
DG442B
OFF
ON
ORDERING INFORMATION
Temp Range
Package
Part Number
DG441BDJ
16-pin Plastic DIP
12
11
10
9
S
2
V+
NC
S
3
DG441B
QFN16 (4 x 4 mm)
D
1
IN
1
IN
2
D
2
16
15
14
13
DG441BDJ-E3
DG442BDJ
DG442BDJ-E3
DG441BDY-E3
S
1
V-
GND
S
4
1
2
3
4
- 40 °C to 85 °C
16-pin Narrow SOIC
DG441BDY-T1-E3
DG442BDY-E3
DG442BDY-T1-E3
DG441BDN-T1-E4
DG442BDN-T1-E4
5
6
7
8
16 pin QFN 4 x 4 mm
(Variation 1)
D
4
IN
4
IN
3
D
3
Top View
Document Number: 72625
S13-1284-Rev. C, 27-May-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG441B, DG442B
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
V+ to V-
GND to V-
Digital
Inputs
a
, V
S
, V
D
Symbol
Limit
44
25
(V-) - 2 to (V+) + 2 or
30 mA, whichever occurs first
30
100
- 65 to 125
16-pin Plastic DIP
c
Power Dissipation (Package)
b
16-pin Narrow Body SOIC
d
QFN-16
d
470
900
850
mW
V
Unit
Continuous Current (Any Terminal)
Current, S or D (Pulsed at 1 ms, 10 % duty cycle )
Storage Temperature
mA
°C
Notes:
a. Signals on S
X
, D
X
, or IN
X
exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6 mW/°C above 75 °C.
d. Derate 12 mW/°C above 75 °C.
www.vishay.com
2
For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 72625
S13-1284-Rev. C, 27-May-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG441B, DG442B
Vishay Siliconix
SPECIFICATIONS
a
(for dual supplies)
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
Parameter
Analog Switch
Analog Signal Range
e
Drain-Source
On-Resistance
On-Resistance Match Between
Channels
e
Switch Off Leakage Current
I
D(off)
Channel On Leakage Current
Digital Control
Input Voltage Low
Input Voltage High
Input Current V
IN
Low
Input Current V
IN
High
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Charge Injection
e
Off Isolation
e
Crosstalk (Channel-to-Channel)
SourceOff Capacitance
e
Drain Off Capacitance
e
Channel On Capacitance
e
Power Supplies
Positive Supply Current
Negative Supply Current
t
ON
t
OFF
Q
OIRR
X
TALK
C
S(off)
C
D(off)
C
D(on)
R
L
= 1 k, C
L
= 35 pF
V
S
= 10 V, See Figure 2
C
L
= 1 nF, V
S
= 0 V
V
gen
= 0 V, R
gen
= 0
R
L
= 50
, C
L
= 15 pF
V
S
= 1 V
RMS
, f = 100 kHz
f = 1 MHz
V
S
= V
D
= 0 V, f = 1 MHz
Room
Room
Room
Room
Room
Room
Room
Room
Room
Full
Room
Full
120
65
-1
- 90
- 95
4
4
16
1
5
-1
-5
pF
220
120
ns
pC
dB
V
INL
V
INH
I
INL
I
INH
V
IN
under test = 0.8 V
All Other = 2.4 V
V
IN
under test = 2.4 V
All Other = 0.8 V
Full
Full
Full
Full
2.4
-1
-1
- 0.01
0.01
1
µA
1
0.8
V
I
D(on)
V
S
= V
D
= ± 14 V
Symbol
V
ANALOG
R
DS(on)
R
DS(on)
I
S(off)
V
D
= ± 14 V, V
S
= ± 14 V
I
S
= 1 mA, V
D
= ± 10 V
I
S
= 1 mA, V
D
= ± 10 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
e
Temp.
b
Full
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
- 0.5
-5
- 0.5
-5
- 0.5
- 10
Limits
- 40 °C to 85 °C
Min.
d
- 15
45
2
± 0.01
± 0.01
± 0.02
Typ.
c
Max.
d
15
80
95
4
5
0.5
5
0.5
5
0.5
10
Unit
V
nA
I+
I-
V+ = 16.5 V, V- = - 16.5 V
V
IN
= 0 or 5 V
µA
Document Number: 72625
S13-1284-Rev. C, 27-May-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG441B, DG442B
Vishay Siliconix
SPECIFICATIONS
(for single supply)
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V
Parameter
Analog Switch
Analog Signal Range
e
Drain-Source
On-Resistance
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Charge Injection
Power Supplies
Positive Supply Current
Negative Supply Current
I+
V
IN
= 0 V or 5 V
I-
Room
Full
Room
Full
1
5
-1
-5
µA
Symbol
V
ANALOG
R
DS(on)
t
ON
t
OFF
Q
I
S
= 1 mA, V
D
= 3 V, 8 V
V
IN
= 2.4 V, 0.8 V
e
Temp.
b
Full
Room
Full
Room
Room
Room
Limits
- 40 °C to 85 °C
Min.
d
0
90
Typ.
c
Max.
d
12
160
200
300
200
Unit
V
R
L
= 1 k, C
L
= 35 pF, V
S
= 8 V
See Figure 2
C
L
= 1 nF, V
gen
= 6 V, R
gen
= 0
120
60
4
ns
pC
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SCHEMATIC DIAGRAM
(typical channel)
V+
5 V Reg
IN
X
Level
Shift/
Drive
V-
V+
GND
V-
Figure 1.
www.vishay.com
4
For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 72625
S13-1284-Rev. C, 27-May-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG441B, DG442B
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
110
100
90
RDS(on) (Ω)
100
90
80
±5V
V+ = 15 V
V- = - 15 V
R DS(on) (Ω)
80
70
60
50
40
30
20
10
- 20 - 16 - 12
-8
-4
0
4
70
60
50
40
30
± 20 V
125 °C
85 °C
25 °C
- 55 °C
± 10 V
± 15 V
20
10
8
12
16
20
0
- 15
- 10
-5
V
D
0
5
10
15
V
D
– Drain Voltage (V)
Drain Voltage (V)
R
DS(on)
vs. V
D
and Power Supply Voltages
250
225
200
RDS(on) (Ω)
175
7V
10 V
100
75
50
25
0
0
2
4
6
8
10
12
V
D
– Drain Voltage (V)
14
16
12 V
15 V
V+ = 5 V
R
DS(on)
vs. V
D
and Temperature
2.5
2
125
VTH (V)
150
1.5
1
0.5
0
4
6
8
10
12
14
16
18
20
V+ Positive Supply (V)
R
DS(on)
vs. V
D
and Single Power Supply Voltages
80
60
40
I S, I D – Current (pA)
20
0
- 20
- 40
- 60
- 80
- 20
I
S(off)
, I
D(off)
V+ = 22 V
V- = - 22 V
T
A
= 25 °C
Input Switching Threshold vs. Supply Voltage
1 nA
V+ = 15 V
V- = - 15 V
V
S,
V
D
= ± 14 V
I
S
, I
D
- Current
100 pA
I
S(off)
, I
D(off)
10 pA
I
D(on)
- 15
- 10
5
0
5
Temperature (°C)
10
15
20
1 pA
- 55
- 35
- 15
5
25
45
65
Temperature (°C)
85
105 125
Leakage Currents vs. Analog Voltage
Leakage Currents vs. Temperature
Document Number: 72625
S13-1284-Rev. C, 27-May-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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