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2SK296

Description
SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING
CategoryDiscrete semiconductor    The transistor   
File Size48KB,1 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

2SK296 Overview

SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING

2SK296 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codeunknow
ConfigurationSingle
Maximum drain current (Abs) (ID)1 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)30 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1

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