Ordering number : EN1509A
SFT1423
N-Channel Power MOSFET
500V, 2A, 4.9
Ω
, Single TP/TP-FA
Features
•
•
http://onsemi.com
ON-resistance
4V drive
•
Protection diode in
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10μs)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10μs, duty cycle≤1%
Tc=25°C
Conditions
Ratings
500
±20
2
10
1.0
20
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7518-004
6.5
5.0
1.5
4
2.3
0.5
Package Dimensions
unit : mm (typ)
7003-004
SFT1423-E
SFT1423-TL-E
0.5
4
5.5
7.0
1.5
6.5
5.0
2.3
0.8
1.6
0.6
7.5
1
0.5
2
0.8
1.2
0.6
3
0 to 0.2
1.2
2.5
0.85
0.7
5.5
7.0
0.85
0.5
1.2
1
2
3
1 : Gate
2 : Drain
3 : Source
4 : Drain
TP
2.3
2.3
1 : Gate
2 : Drain
3 : Source
4 : Drain
TP-FA
2.3
2.3
Product & Package Information
• Package : TP
• JEITA, JEDEC : SC-64, TO-251
• Minimum Packing Quantity : 500 pcs./bag
• Package : TP-FA
• JEITA, JEDEC : SC-63, TO-252
• Minimum Packing Quantity : 700 pcs./reel
Marking
(TP, TP-FA)
Packing Type (TP-FA) : TL
T1423
LOT No.
TL
Electrical Connection
2, 4
1
3
Semiconductor Components Industries, LLC, 2013
July, 2013
60612 TKIM/62409PA TKIM TC-00001987 No. A1509-1/9
SFT1423
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS=2A, VGS=0V
VDS=200V, VGS=10V, ID=2A
See specified Test Circuit.
VDS=30V, f=1MHz
Conditions
ID=10mA, VGS=0V
VDS=400V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=1A
ID=1A, VGS=10V
ID=0.5A, VGS=4V
1.2
1.1
1.9
3.8
3.9
175
32
6
7.4
8.8
42
27
8.7
1.1
2.9
0.9
1.2
4.9
5
Ratings
min
500
100
±10
2.6
typ
max
Unit
V
μA
μA
V
S
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Switching Time Test Circuit
VIN
VDD=200V
10V
0V
VIN
PW=10μs
D.C.≤1%
G
D
ID=1A
RL=200Ω
VOUT
P.G
SFT1423
50Ω
S
Ordering Information
Device
SFT1423-E
SFT1423-TL-E
Package
TP
TP-FA
Shipping
500pcs./bag
700pcs./reel
memo
Pb Free
No. A1509-2/9
SFT1423
2.0
1.8
1.6
ID -- VDS
.0
V
2.0
ID -- VGS
VDS=10V
0V
4.
10
1.8
1.6
Drain Current, ID -- A
.0
V
Drain Current, ID -- A
16
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
1
2
3
4
1.4
1.2
1.0
0.8
0.6
0.4
0.2
3.0V
VGS=2.5V
Ta=
75
°
C
0
0.5
1.0
1.5
2.0
2.5
5
6
7
8
9
10
0
25
°
3.0
3.5
C
--25
°
C
4.0
4.5
5.0
Drain-to-Source Voltage, VDS -- V
10
9
RDS(on) -- VGS
IT14752
12
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Ta
IT11453
Ta=25
°
C
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
ID=0.5A
8
10
1.0A
7
6
5
4
3
2
8
6
A
=1
, I D
.5A
0V
=0
=1
ID
,
S
V G
=4V
S
VG
4
2
0
2
4
6
8
10
IT14754
0
--60
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
5
|
y
fs
|
-- ID
Ambient Temperature, Ta --
°C
5
3
2
1.0
7
5
3
2
0.1
7
5
IS -- VSD
IT11455
Forward Transfer Admittance,
|
y
fs
|
-- S
3
2
VDS=10V
°
C
25
VGS=0V
3
2
0.1
7
5
3
2
0.01
7
0.001
°
C
-25
=-
Ta
°
C
75
Source Current, IS -- A
1.0
7
5
Ta=7
5
°
C
0.01
7
5
3
2
2 3
5 7 0.01
2 3
5 7 0.1
2 3
5 7 1.0
2 3
IT14787
0.001
0.2
0.4
0.6
--25
°
C
0.8
25
°
C
3
2
1.0
1.2
1.4
IT14757
Drain Current, ID -- A
2
SW Time -- ID
7
Ciss, Coss, Crss -- VDS
Diode Forward Voltage, VSD -- V
Switching Time, SW Time -- ns
100
7
5
3
2
VDD=200V
VGS=10V
Ciss, Coss, Crss -- pF
5
3
2
f=1MHz
Ciss
td(off)
tf
100
7
5
3
2
10
7
5
3
2
Coss
10
7
5
3
0.1
tr
td(on)
Crss
2
3
5
7
1.0
2
3
5
IT14758
0
5
10
15
20
25
30
35
40
45
50
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
IT14759
No. A1509-3/9
SFT1423
10
9
VGS -- Qg
VDS=200V
ID=2A
Drain Current, ID -- A
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
ASO
IDP=10A
Gate-to-Source Voltage, VGS -- V
PW
≤
10
μs
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
9
10
10
ID=2A
DC
10
op
era
tio
n
10
1m
ms
0
μ
s
s
0m
s
Operation in
this area is
limited by R DS (on).
Tc=25°C
Single pulse
2
3
5
7 10
2
3
(Ta
=2
5
°
C
)
0.01
1.0
5
7 100
2
3
5
7
Total Gate Charge, Qg -- nC
1.2
PD -- Ta
IT14760
25
Drain-to-Source Voltage, VDS -- V
PD -- Tc
IT14788
Allowable Power Dissipation, PD -- W
1.0
Allowable Power Dissipation, PD -- W
20
0.8
No
0.6
15
he
at
sin
k
10
0.4
0.2
5
0
20
40
60
80
100
120
140
160
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT14762
Case Temperature, Tc --
°C
IT14763
No. A1509-4/9
SFT1423
Taping Specification
SFT1423-TL-E
No. A1509-5/9
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