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DB4X314F0R

Description
Schottky Diodes & Rectifiers Schottky Diode 2.9x2.8mm Gull Wing
CategoryDiscrete semiconductor    diode   
File Size514KB,5 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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Schottky Diodes & Rectifiers Schottky Diode 2.9x2.8mm Gull Wing

DB4X314F0R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPanasonic
package instructionTO-253, SC-61AB, 4 PIN
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSEPARATE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeMIXER DIODE
Maximum forward voltage (VF)0.4 V
frequency bandL BAND
JEDEC-95 codeTO-253AA
JESD-30 codeR-PDSO-G4
Number of components2
Number of terminals4
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage30 V
Maximum reverse current0.3 µA
Reverse test voltage30 V
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
DB4X314F
Silicon epitaxial planar type
For high speed switching circuits
Features
Short reverse recovery time t
rr
Small reverse current I
R
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Unit: mm
Marking Symbol: 5C
Basic Part Number
Dual DB2J314 (Parrarel, oppositely arranged)
Packaging
DB4X314F0R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current
Peak forward current
Junction temperature
Operating ambient temperature
Storage temperature
Single
Series
Single
Series
Symbol
V
R
V
RM
I
F
I
FM
T
j
T
opr
T
stg
Rating
30
30
30
20
150
110
125
–40 to +85
–55 to +125
Unit
V
V
mA
1: Anode-1
2: Cathode-2
Panasonic
JEITA
Code
4
3: Anode-2
4: Cathode-1
Mini4-G4-B
SC-61AB
TO-253/SOT-143
3
mA
°C
°C
°C
1
2
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
*1
Symbol
V
F1
V
F2
I
R
C
t
t
rr
I
F
= 1 mA
I
F
= 30 mA
V
R
= 30 V
V
R
= 10 V, f = 1 MHz
I
F
= I
R
=10 mA, I
rr
= 1 mA, R
L
= 100
1.5
1.0
Conditions
Min
Typ
Max
0.4
1.0
300
Unit
V
nA
pF
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz
4. *1: t
rr
measurement circuit
Bias Application Unit (N-50BU)
Input Pulse
t
p
10%
Output Pulse
t
r
t
I
F
t
rr
t
I
rr
= 1 mA
A
V
R
Wave Form Analyzer
(SAS-8130)
R
i
= 50
Ver. CED
90%
t
p
= 2
µs
t
r
= 0.35 ns
δ
= 0.05
I
F
= 10 mA
I
R
= 10 mA
R
L
= 100
Pulse Generator
(PG-10N)
R
s
= 50
Publication date: April 2013
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