ZUMTS17TA datasheet, PDF - EEWORLD Datasheet

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ZUMTS17TA: DescriptionRF Bipolar Transistors; Categorysemiconductor Discrete semiconductor; File Size24KB，2 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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RF Bipolar Transistors

ZUMTS17TA Parametric

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	Diodes
Product Category	RF Bipolar Transistors
RoHS	N
Transistor Type	Bipolar
Technology	Si
Transistor Polarity	NPN
Collector- Emitter Voltage VCEO Max	15 V
Emitter- Base Voltage VEBO	2.5 V
Continuous Collector Current	0.025 A
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Single
Mounting Style	SMD/SMT
Package / Case	SOT-323
Collector- Base Voltage VCBO	25 V
DC Current Gain hFE Max	25
Height	1 mm
Length	2.2 mm
Operating Frequency	1300 MHz
Type	RF Bipolar Small Signal
Width	1.26 mm
Pd - Power Dissipation	330 mW
Unit Weight	0.002116 oz

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SOT323 NPN SILICON PLANAR

RF TRANSISTORS

ISSUE 1 – DECEMBER 1998

PARTMARKING DETAIL —

ZUMTS17 - T4

ZUMTS17H - T4H

ZUMTS17

ZUMTS17H

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

VALUE

25

15

2.5

50

25

330

-55 to +150

UNIT

V

mA

mW

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER

Collector Cut-Off

Current

Static Forward Current

Transfer Ratio

ZUMTS17H

Transition

Frequency

f

T

SYMBOL

I

CBO

MIN.

TYP.

MAX.

10

25

20

70

1.0

1.3

Feedback Capacitance

Collector Capacitance

Emitter Capacitance

Noise Figure

Intermodulation

Distortion

-C

re

C

Tc

C

Te

N

d

im

4.5

-45

0.85

1.5

2.0

150

125

200

GHz

pF

dB

UNIT

nA

µA

CONDITIONS.

V

CB

=10V, I

E

=0

V

CB

=10V, I

E

=0,

T

amb

= 100°C

I

C

=2.0mA, V

CE

=1.0V

I

C

=25mA, V

CE

=1.0V

I

C

=2.0mA, V

CE

=1.0V

I

C

=2.0mA, V

CE

=5.0V

f=500MHz

I

C

=25mA, V

CE

=5.0V

f=500MHz

I

C

=2.0mA, V

CE

=5V, f=1MHz

I

E

=I

e

=0, V

CB

=10V,

f=1MHz

I

C

=I

c

=0, V

EB

=5.0V,

f=1MHz

I

C

=2.0mA, V

CE

=5.0V

R

S

=50Ω, f=500MHz

I

C

=10mA, V

CE

=6.0V

R

L

=37.5Ω,T

amb

=25°C

V

o

=100mV at f

p

=183MHz

V

o

=100mV at f

q

=200MHz

measured at f

(2q-p)

=217MHz

h

FE

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle

≤2%

Spice parameter data is available upon request for this device

ZUMTS17TA Related Products

	ZUMTS17TA
Description	RF Bipolar Transistors
Product Attribute	Attribute Value
Manufacturer	Diodes
Product Category	RF Bipolar Transistors
RoHS	N
Transistor Type	Bipolar
Technology	Si
Transistor Polarity	NPN
Collector- Emitter Voltage VCEO Max	15 V
Emitter- Base Voltage VEBO	2.5 V
Continuous Collector Current	0.025 A
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Single
Mounting Style	SMD/SMT
Package / Case	SOT-323
Collector- Base Voltage VCBO	25 V
DC Current Gain hFE Max	25
Height	1 mm
Length	2.2 mm
Operating Frequency	1300 MHz
Type	RF Bipolar Small Signal
Width	1.26 mm
Pd - Power Dissipation	330 mW
Unit Weight	0.002116 oz

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