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BFP-196W-E6327

Description
RF Bipolar Transistors NPN Silicon RF TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size539KB,6 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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BFP-196W-E6327 Overview

RF Bipolar Transistors NPN Silicon RF TRANSISTOR

BFP-196W-E6327 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerInfineon
Product CategoryRF Bipolar Transistors
RoHSDetails
Transistor TypeBipolar
TechnologySi
Transistor PolarityNPN
Collector- Emitter Voltage VCEO Max12 V
Emitter- Base Voltage VEBO2 V
Continuous Collector Current0.15 A
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle Dual Emitter
Mounting StyleSMD/SMT
Package / CaseSOT-343-4
PackagingCut Tape
PackagingReel
Collector- Base Voltage VCBO20 V
DC Current Gain hFE Max70 at 50 mA at 8 V
Height0.9 mm
Length2 mm
Operating Frequency7.5 GHz
TypeRF Bipolar Small Signal
Width1.25 mm
Gain Bandwidth Product fT7500 MHz
Maximum DC Collector Current0.15 A
Pd - Power Dissipation700 mW
Factory Pack Quantity3000
Unit Weight0.000226 oz
BFP196W
Low Noise Silicon Bipolar RF Transistor
For low noise, low distortion broadband
amplifiers in antenna and telecommunications
systems up to 1.5 GHz at collector currents from
20 mA to 80 mA
Power amplifier for DECT and PCN systems
f
T
= 7.5 GHz,
NF
min
= 1.3 dB at 900 MHz
Pb-free (RoHS compliant) and halogen-free package
with visible leads
Qualification report according to AEC-Q101 available
3
4
1
2
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Type
BFP196W
Marking
Pin Configuration
RIs
1=E 2=C 3=E 4=B -
Package
-
SOT343
Maximum Ratings
at
T
A
= 25 °C, unless otherwise specified
Parameter
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
J
T
A
T
Stg
Symbol
R
thJS
Value
Unit
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
69°C
12
20
20
2
150
15
700
150
-65 ... 150
-65 ... 150
Value
V
mA
mW
°C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Unit
Junction - soldering point
2)
1
T
S
is
2
For
115
K/W
measured on the collector lead at the soldering point to the pcb
the definition of
R
thJS
please refer to Application Note AN077 (Thermal Resistance Calculation)
1
2014-04-04

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